Optimisation of GaAs-based (GaIn)(NAs)//GaAs vertical-cavity surface-emitting diode lasers for high-temperature operation in 1.3-μm optical-fibre communication systems

2004 ◽  
Vol 151 (5) ◽  
pp. 417-420 ◽  
Author(s):  
R.P. Sarzała ◽  
W. Nakwaski
2018 ◽  
Vol 11 (11) ◽  
pp. 112101 ◽  
Author(s):  
Masaru Kuramoto ◽  
Seiichiro Kobayashi ◽  
Takanobu Akagi ◽  
Komei Tazawa ◽  
Kazufumi Tanaka ◽  
...  

2017 ◽  
Vol 10 (11) ◽  
pp. 112101 ◽  
Author(s):  
Tsu-Chi Chang ◽  
Shiou-Yi Kuo ◽  
Jhen-Ting Lian ◽  
Kuo-Bin Hong ◽  
Shing-Chung Wang ◽  
...  

2021 ◽  
Vol 11 (15) ◽  
pp. 6908
Author(s):  
Alberto Gullino ◽  
Alberto Tibaldi ◽  
Francesco Bertazzi ◽  
Michele Goano ◽  
Pierluigi Debernardi

The ICT scene is dominated by short-range intra-datacenter interconnects and networking, requiring high speed and stable operations at high temperatures. GaAs/AlGaAs vertical-cavity surface-emitting lasers (VCSELs) emitting at 850–980 nm have arisen as the main actors in this framework. Starting from our in-house 3D fully comprehensive VCSEL solver VENUS, in this work we present the possibility of downscaling the dimensionality of the simulation, ending up with a multiphysics 1D solver (D1ANA), which is shown to be capable of reproducing the experimental data very well. D1ANA is then extensively applied to optimize high-temperature operation, by modifying cavity detuning and distributed Bragg’s reflector lengths.


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