An influence of bottom electrode material on electrical conduction and resistance switching of TiOxthin films

AbstractThe resistance switching in Pt/Co-O/Pt and Ta/Co-O/Pt has been investigated. Compared to Pt/Co-O/Pt, the reset current was more efficiently decreased in Ta/Co-O/Pt by using the load resistor in the forming process, indicating that the embedded resistance component with little parasitic capacitance effectively limits the current in the forming process. The reset process with the reset current lower than 0.15 mA was successfully demonstrated in Ta/Co-O/Pt. In addition, the high speed resistance switching by the voltage pulse with the pulse width of 20 ns was carried out, by investigating the pulse voltage height dependence of reset speed in Ta/Co-O/Pt.

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The effect of electrode material on the electrical conduction of metal-Pb(Zr0.53Ti0.47)O3-metal thin film capacitors

Microelectronics Reliability ◽

10.1016/j.microrel.2004.11.004 ◽

2005 ◽

Vol 45 (5-6) ◽

pp. 1003-1006 ◽

Cited By ~ 20

Author(s):

P.C. Juan ◽

H.C. Chou ◽

J.Y.M. Lee

Keyword(s):

Thin Film ◽

Electrical Conduction ◽

Electrode Material ◽

Metal Thin Film ◽

Thin Film Capacitors

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Electrical Properties of Ag/In2O3/M (M = LaNiO3, Pt) Devices for RRAM Applications

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.209.94 ◽

2013 ◽

Vol 209 ◽

pp. 94-97

Author(s):

Bhaumik V. Mistry ◽

Utpal S. Joshi ◽

S.J. Trivedi ◽

U.N. Trivedi ◽

R. Pinto

Keyword(s):

Bottom Electrode ◽

Pulsed Laser ◽

Grazing Incidence ◽

Resistance Switching ◽

Binary Oxide ◽

Laser Deposition ◽

Oxide Materials ◽

Cross Sectional ◽

New Class ◽

Switching Characteristics

Resistance switching properties of nanostructured In2Subscript textO3 films grown on Pt and LaNiO3 (LNO) bottom electrodes have been investigated. High quality In2O3/LNO/SiO2 and In2O3/Pt/Ti/SiO2/Si heterostructures were grown by pulsed laser deposition. High purity Ag was thermally evaporated on In2O3 active layer to form top electrode. The Ag/In2O3/M (M = LNO, Pt) structure was characterized by grazing incidence XRD, AFM and cross sectional SEM. Pollycrystalline growth of oxides LNO and In2O3 was confirmed by GIXRD, where as AFM show nanostructured growth with smooth surface morphology. Two terminal I-V characteristics showed reproducible hysteresis suggesting two distinct resistance states in the film. Typical resistance switching ratio (Ron/Roff) of the order of 113 % and 72% have been estimated for In2O3 device grown on LNO and Pt substrates, respectively. The observed resistance switching characteristics offers lot of promise for new class of binary oxide materials with oxide (LNO) as bottom electrode leading to better suitability for nanoelectronics RRAM devices.

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Top electrode material related bipolar memory and unipolar threshold resistance switching in amorphous Ta2O5 films

Applied Physics A ◽

10.1007/s00339-012-7493-2 ◽

2012 ◽

Vol 111 (4) ◽

pp. 1065-1070 ◽

Cited By ~ 1

Author(s):

Yunyu Cai ◽

Cuicui Sheng ◽

Changhao Liang

Keyword(s):

Electrode Material ◽

Resistance Switching ◽

Bipolar Memory

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Contribution of electrodes and microstructures to the electrical properties of Pb(Zr0.53Ti0.47)O3 thin film capacitors

Journal of Materials Research ◽

10.1557/jmr.1994.2968 ◽

1994 ◽

Vol 9 (11) ◽

pp. 2968-2975 ◽

Cited By ~ 128

Author(s):

H.N. Al-Shareef ◽

A.I. Kingon ◽

X. Chen ◽

K.R. Bellur ◽

O. Auciello

Keyword(s):

Thin Film ◽

Electrode Material ◽

Bottom Electrode ◽

Low Voltage ◽

Order Effect ◽

Major Effect ◽

Leakage Currents ◽

Ohmic Behavior ◽

Thin Film Capacitors ◽

Pzt Thin Film

Pb(Zr0.53Ti0.47)O3 (PZT) thin film capacitors have been fabricated with four electrode combinations: Pt/PZT/Pt/SiO2Si, RuO2/PZT/Pt/SiO2/Si, RuO2/PZT/RuO2/SiO2/Si, and Pt/PZT/RuO2/SiO2/Si. It is shown that polarization fatigue is determined largely by the electrode type (Pt vs RuO2), and microstructure has only a second-order effect on fatigue. If either the top or bottom electrode is platinum, significant polarization fatigue occurs. Fatigue-free capacitors are obtained only when both electrodes are RuO2. In contrast, the bottom electrode is found to have a major effect on the leakage characteristics of the PZT capacitors, presumably via microstructural modifications. Capacitors with bottom RuO2 electrodes show high leakage currents (J = 10−3-10−5 A/cm2 at 1 V) irrespective of the top electrode material. Capacitors with Pt bottom electrodes have much lower leakage currents (J = 10−8 A/cm2 at 1 V) irrespective of the top electrode material. At low voltage, the I-V curves show ohmic behavior and negligible polarity dependence for all capacitor types. At higher voltages, the leakage current is probably Schottky emission controlled for the capacitors with Pt bottom electrodes.

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