scholarly journals Laser modification of graphene oxide layers

2018 ◽  
Vol 167 ◽  
pp. 04010 ◽  
Author(s):  
Petr Malinský ◽  
Anna Macková ◽  
Mariapompea Cutroneo ◽  
Jakub Siegel ◽  
Marie Bohačová ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Graphene Oxide ◽  
Analytical Methods ◽  
Beam Energy ◽  
Ion Beam ◽  
Composition Analysis ◽  
Beam Energy Density ◽  
Linearly Polarized ◽  
Chemical Composition Analysis ◽  
Ftir And Raman Spectroscopy

The effect of linearly polarized laser irradiation with various energy densities was successfully used for reduction of graphene oxide (GO). The ion beam analytical methods (RBS, ERDA) were used to follow the elemental composition which is expected as the consequence of GO reduction. The chemical composition analysis was accompanied by structural study showing changed functionalities in the irradiated GO foils using spectroscopy techniques including XPS, FTIR and Raman spectroscopy. The AFM was employed to identify the surface morphology and electric properties evolution were subsequently studied using standard two point method measurement. The used analytical methods report on reduction of irradiated graphene oxide on the surface and the decrease of surface resistivity as a growing function of the laser beam energy density.

scholarly journals Correlation analysis of intense ion beam energy in a self magnetically insulated diode

2014 ◽  
Vol 32 (2) ◽  
pp. 311-319 ◽  
Author(s):  
A.I. Pushkarev ◽  
Yu.I. Isakova ◽  
I.P. Khaylov
Keyword(s):  
Energy Density ◽  
Correlation Analysis ◽  
Beam Energy ◽  
Ion Beam ◽  
Coefficient Of Determination ◽  
Anode Surface ◽  
Explosive Emission ◽  
Beam Energy Density ◽  
Explosive Emission Cathode ◽  
Emission Cathode

AbstractThis paper presents the results of a statistical and correlation analysis of the energy and energy density of an ion beam formed by a self-magnetically insulated diode with an explosive emission cathode. The experiments were carried out with the TEMP-4M accelerator operating in double-pulse mode: plasma formation occurs during the first pulse (negative polarity, 300–500 ns, 100–150 kV), and ion extraction and acceleration during the second pulse (positive polarity, 120 ns, 250–300 kV). Various arrangements of diodes have been investigated: strip focusing and planar diodes, a conical focusing diode and a spiral diode. The total ion beam energy was measured using both a calorimeter and an infrared camera and the beam energy density was measured by the thermal imaging and acoustic diagnostics. The correlation analysis showed that ion current density is only weakly dependent on the accelerating voltage and other output parameters of the accelerator, with the coefficient of determination <0.3. At the same time, in this paper, we have identified that the total energy of the beam and the energy density is strongly dependant on the accelerator output parameters, since the coefficient of determination >0.9. The mechanism governing stabilization of the beam energy density from shot to shot was discovered and attributed to formation of the neutral component in ion beam as being due to charge exchange between accelerated ions and neutral molecules from a neutral layer near the anode surface. Implementation using a self-magnetically insulated diode with an explosive-emission cathode, having an operational lifetime of up to 106 shots, has promising prospects for various technological applications.

How Xe and Ga FIB Differ in Inducing Lateral Damage on TEM Samples

2015 ◽  
Author(s):  
Tomáš Hrnčíř ◽  
Jozef Vincenc Oboňa ◽  
Martin Petrenec ◽  
Jan Michalička ◽  
Christian Lang
Keyword(s):  
Sample Preparation ◽  
Analytical Methods ◽  
Beam Energy ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Amorphous Layer ◽  
Sample Structure ◽  
The Difference ◽  
Final Cleaning

Abstract Reducing FIB induced damage on TEM samples is very important in order to preserve the sample structure, especially on modern semiconductor devices. We have compared the damage caused by Ga ion beam to our measurements of the damage caused by Xe ion beam and came to the conclusion that Xe ion beam induced damage is significantly lower at 30 keV beam energy. This has been proven by several independent analytical methods. Our results show that TEM sample preparation by Xe ion beam causes less amorphous damage and increase the quality of the lamella and in many cases it will allow to prepare the lamella by finishing it even at 30 keV, without the final cleaning step at the low beam energy. Final polishing step by Xe beam at beam energy 3 keV further reduces the amorphous layer, but the difference against Ga beam is not so significant like at 30 keV.

Graphene oxide supported MnO2 nanorods: an efficient heterogeneous catalyst for oxidation of aromatic amines to azo-compounds

RSC Advances ◽  
2014 ◽  
Vol 4 (105) ◽  
pp. 61187-61192 ◽  
Author(s):  
Shweta Kumari ◽  
Amiya Shekhar ◽  
Devendra D. Pathak
Keyword(s):  
Raman Spectroscopy ◽  
Composite Material ◽  
Graphene Oxide ◽  
Aromatic Amines ◽  
Area Measurement ◽  
Azo Compounds ◽  
Bet Surface Area ◽  
Surface Area Measurement ◽  
Ftir And Raman Spectroscopy ◽  
Efficient Heterogeneous Catalyst

Graphene oxide supported MnO2 nanorods (GOnc), a composite material, has been synthesized and characterized by XRD, FE-SEM, EDX, BET surface area measurement, FTIR and Raman Spectroscopy.

scholarly journals Correction: Yu, D.Q., et al. Microscopic Characteristic and Chemical Composition Analysis of Three Medicinal Plants and Surface Frosts. Molecules 2019, 24, 4548

Molecules ◽  
2021 ◽  
Vol 26 (2) ◽  
pp. 379
Author(s):  
Da Qing Yu ◽  
Xiao Jing Han ◽  
Ting Yu Shan ◽  
Rui Xu ◽  
Jin Hu ◽  
...  
Keyword(s):  
Chemical Composition ◽  
Medicinal Plants ◽  
Composition Analysis ◽  
Microscopic Characteristic ◽  
Chemical Composition Analysis

The authors would like to correct an error in the title paper [...]

scholarly journals Raman Spectroscopy Investigation of Graphene Oxide Reduction by Laser Scribing

2021 ◽  
Vol 7 (2) ◽  
pp. 48
Author(s):  
Vittorio Scardaci ◽  
Giuseppe Compagnini
Keyword(s):  
Raman Spectroscopy ◽  
Graphene Oxide ◽  
Reduce Graphene Oxide ◽  
Oxide Reduction ◽  
Material Parameters ◽  
Laser Scribing ◽  
Wide Range ◽  
Scan Speed ◽  
Laser Reduction

Laser scribing has been proposed as a fast and easy tool to reduce graphene oxide (GO) for a wide range of applications. Here, we investigate laser reduction of GO under a range of processing and material parameters, such as laser scan speed, number of laser passes, and material coverage. We use Raman spectroscopy for the characterization of the obtained materials. We demonstrate that laser scan speed is the most influential parameter, as a slower scan speed yields poor GO reduction. The number of laser passes is influential where the material coverage is higher, producing a significant improvement of GO reduction on a second pass. Material coverage is the least influential parameter, as it affects GO reduction only under restricted conditions.

Chemical composition analysis of carbohydrate fragmentation products

2021 ◽  
Vol 156 ◽  
pp. 105112
Author(s):  
Samin Fathalinejad ◽  
Esben Taarning ◽  
Peter Christensen ◽  
Jan H. Christensen
Keyword(s):  
Chemical Composition ◽  
Composition Analysis ◽  
Chemical Composition Analysis
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