Improvement of GaAs crystal quality grown on Si by metalorganic chemical vapor deposition through two‐dimensional‐like nucleation with aninsituH2/AsH3plasma cleaning at 450 °C
2007 ◽
Vol 300
(1)
◽
pp. 190-193
◽
1995 ◽
Vol 146
(1-4)
◽
pp. 554-557
◽
1994 ◽
Vol 145
(1-4)
◽
pp. 120-125
◽
1994 ◽
Vol 82-83
◽
pp. 64-69
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1999 ◽
Vol 203
(3)
◽
pp. 443-446
◽
1993 ◽
Vol 32
(Part 2, No. 5A)
◽
pp. L648-L649
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