Improvement of GaAs crystal quality grown on Si by metalorganic chemical vapor deposition through two‐dimensional‐like nucleation with aninsituH2/AsH3plasma cleaning at 450 °C

1991 ◽  
Vol 58 (8) ◽  
pp. 862-864
Author(s):  
Euijoon Yoon ◽  
Rafael Reif
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