Microampere threshold current operation of GaAs and strained InGaAs quantum well lasers at low temperatures (5 K)

1991 ◽  
Vol 58 (24) ◽  
pp. 2752-2754 ◽  
Author(s):  
L. E. Eng ◽  
A. Sa’ar ◽  
T. R. Chen ◽  
I. Gravé ◽  
N. Kuze ◽  
...  
1994 ◽  
Vol 65 (14) ◽  
pp. 1805-1807 ◽  
Author(s):  
B. Zhao ◽  
T. R. Chen ◽  
L. E. Eng ◽  
Y. H. Zhuang ◽  
A. Shakouri ◽  
...  

2017 ◽  
Vol 25 (22) ◽  
pp. 26714 ◽  
Author(s):  
Jialin Jiang ◽  
Junqiang Sun ◽  
Jianfeng Gao ◽  
Ruiwen Zhang

2017 ◽  
Vol 9 (5) ◽  
pp. 1-8
Author(s):  
Bocang Qiu ◽  
Hai Martin Hu ◽  
Weimin Wang ◽  
James Ho ◽  
Wenbin Liu ◽  
...  

1996 ◽  
Vol 450 ◽  
Author(s):  
Michael E. Flatté ◽  
C. H. Grein ◽  
J. T. Olesberg ◽  
T. F. Boggess

ABSTRACTWe will present calculations of the ideal performance of mid-infrared InAs/InGaSb superlattice quantum well lasers. For these systems several periods of an InAs/InGaSb type-II superlattice are grown in quantum wells. Calculations of the non-radiative and radiative lifetimes of the carriers utilize the full non-parabolic band structure and momentum-dependent matrix elements calculated from a semi-empirical multilayer K · P theory. From these lifetimes, threshold current densities have been evaluated for laser structures. We find serious problems with the hole and electron confinement in the superlattice quantum wells grown to date, and propose a four-layer superlattice structure which corrects these problems.


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