Threshold reduction in strained InGaAs single quantum well lasers by rapid thermal annealing

1991 ◽  
Vol 59 (9) ◽  
pp. 1040-1042 ◽  
Author(s):  
N. Yamada ◽  
G. Roos ◽  
J. S. Harris
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well

Effect of Thermal Annealing on the Photoluminescence Properties of a GaInNAs/GaAs Single Quantum Well

2000 ◽  
Vol 639 ◽  
Author(s):  
Laurent Grenouillet ◽  
Catherine Bru-Chevallier ◽  
Gérard Guillot ◽  
Philippe Gilet ◽  
Philippe Ballet ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Low Temperatures ◽  
Blue Shift ◽  
Emission Peak ◽  
Single Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well ◽  
Peak Energy ◽  
Strong Blue Shift

ABSTRACTWe report on the effect of thermal annealing on the photoluminescence properties of a Ga0.65In0.35N0.02As0.98/GaAs single quantum well. Thermal annealing is shown to decrease the strong nitrogen-induced localization effects observed at low temperatures and to reduce the full width at half maximum of the emission peak. It also induces a strong blue shift of the emission peak energy, which is thought not to arise from an In-Ga interdiffusion alone, as it is much larger than in a nitrogen-free reference single quantum well.

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