Electron mobility measured in undoped InGaAs epitaxial layer grown onn‐InP substrate

1992 ◽  
Vol 61 (18) ◽  
pp. 2220-2221 ◽  
Author(s):  
K. Somogyi ◽  
J. Pfeifer
Keyword(s):  
Epitaxial Layer ◽  
Electron Mobility ◽  
Inp Substrate

Effect of Elastic Mismatch and Anisotropy on Cracking of Brittle Films on Elastic Substrates

2011 ◽  
Vol 465 ◽  
pp. 235-238
Author(s):  
Michal Kotoul ◽  
Tomas Vyslouzil
Keyword(s):  
Weight Function ◽  
Epitaxial Layer ◽  
Elastic Anisotropy ◽  
Minimum Energy ◽  
Inp Substrate ◽  
Elastic Substrates ◽  
Elastic Mismatch

The paper analyzes the depth and spacing of cracks in a tensile strained In0.25Ga0.75As epitaxial layer on a InP substrate using the minimum energy theorem. The elastic anisotropy of both the layer and the substrate is considered. The concept of weight function obtained numerically by means of detailed FEM is employed.

1.55 µm InGaAsP/InP laser buried in a high-resistivity epitaxial layer on a semi-insulating InP substrate

1994 ◽  
Vol 30 (18) ◽  
pp. 1481-1482 ◽  
Author(s):  
Y. Sakai ◽  
M. Fukuda ◽  
S. Matsumoto ◽  
Y. Itaya ◽  
M. Yamamoto
Keyword(s):  
Epitaxial Layer ◽  
High Resistivity ◽  
Inp Substrate

Electron Mobility in In1-xGaxAs Epitaxial Layer

1974 ◽  
Vol 13 (3) ◽  
pp. 561-562 ◽  
Author(s):  
Takashi Katoda ◽  
Fukunobu Osaka ◽  
Takuo Sugano
Keyword(s):  
Epitaxial Layer ◽  
Electron Mobility

scholarly journals InP and InGaAs grown on InP substrate by molecular beam epitaxy

2022 ◽  
Vol 355 ◽  
pp. 03047
Author(s):  
Hailong Yu ◽  
Hanchao Gao ◽  
Wei Wang ◽  
Ben Ma ◽  
Zhijun Yin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Carrier Concentration ◽  
Growth Temperature ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Strongly Correlated ◽  
Inp Substrate ◽  
Inp Substrates

InP and InGaAs epitaxial layers on InP substrates using molecular beam epitaxy (MBE) have been studied. Carrier concentration and mobility of InP and InGaAs are found that are strongly correlated with the growth temperature and V/III ratio. The InGaAs layers using As2 were compared with the layers grown using As4 from a Riber standard cracker cell. When As4 is used, the highest electron mobility of InGaAs is 3960 cm2/(V·s) with the V/III ratio of 65. When converted to As2, the V/III ratio with the highest electron mobility decreased to 20. With the arsenic cracker temperature decreased from 950 ℃ to 830 ℃, the electron mobility increased from 4090 cm2/(V • s) to 5060 cm2/(V • s).

Electron mobility and energy gap of In0.53Ga0.47As on InP substrate

1976 ◽  
Vol 47 (12) ◽  
pp. 5405-5408 ◽  
Author(s):  
Yoshikazu Takeda ◽  
Akio Sasaki ◽  
Yujiro Imamura ◽  
Toshinori Takagi
Keyword(s):  
Electron Mobility ◽  
Energy Gap ◽  
Inp Substrate
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