Electron Mobility and Persistent Photoconductivity in Quantum Wells In0.52Al0.48As/ In0.53Ga0.47As/ In0.52Al0.48As on InP Substrate

Nonlinear transport of hot electrons in semi-insulating GaAs / AlGaAs quantum wells significantly affects their photorefractive properties. In case of two waves mixing, this influence consists, among others, in an increased shift of photorefractive grating relative to light intensity distribution. The influence of nonlinear transport on grating recording time is less examined experimentally and theoretically. This study compares numerical and analytical solutions describing grating dynamics in approximation of small fringe contrast. The influence of nonlinear electron mobility on space-charge field was examined depending on external electric field intensity and on the grating constant. It was found that in the electric field range below 20 kV/cm, the nonlinear transport of electrons does not shorten the grating generation time.

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Limitation of electron mobility from hyperfine interaction in ultraclean quantum wells and topological insulators

Physical Review B ◽

10.1103/physrevb.94.045309 ◽

2016 ◽

Vol 94 (4) ◽

Cited By ~ 5

Author(s):

S. A. Tarasenko ◽

Guido Burkard

Keyword(s):

Hyperfine Interaction ◽

Quantum Wells ◽

Electron Mobility ◽

Topological Insulators

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Two-dimensional hot-electron mobility in GaAs quantum wells

Semiconductor Science and Technology ◽

10.1088/0268-1242/2/1/004 ◽

1987 ◽

Vol 2 (1) ◽

pp. 30-32

Author(s):

A Bhattacharyya ◽

D Chattopadhyay

Keyword(s):

Quantum Wells ◽

Electron Mobility ◽

Two Dimensional ◽

Hot Electron

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Bandstructure Near Misfit Dislocations in Si Quantum Wells

Microscopy and Microanalysis ◽

10.1017/s1431927600024090 ◽

1998 ◽

Vol 4 (S2) ◽

pp. 794-795

Author(s):

P.E. Batson

Keyword(s):

Quantum Wells ◽

Conduction Band ◽

Electron Mobility ◽

Axial Strain ◽

Strain Relaxation ◽

Local Potential ◽

Misfit Dislocations ◽

High Electron ◽

Strained Si ◽

Growth Interface

High electron mobility structures have been built for several years now using strained silicon layers grown on SixGe(1-x) with x in the 25-40% range. In these structures, a thin layer of silicon is grown between layers of unstrained GeSi alloy. Matching of the two lattices in the plane of growth produces a bi-axial strain in the silicon, splitting the conduction band and providing light electron levels for enhanced mobility. If the silicon channel becomes too thick, strain relaxation can occur by injection of misfit dislocations at the growth interface between the silicon and GeSi alloy. The strain field of these dislocations then gives rise to a local potential variation that limits electron mobility in the strained Si channel. This study seeks to verify this mechanism by measuring the absolute conduction band shifts which track the local potential near the misfit dislocations.

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Heterostructure InGaAlAs/InAlAs on the InP substrate for the electro-optical modulator based on the quantum confined Stark effect

ITM Web of Conferences ◽

10.1051/itmconf/20193014004 ◽

2019 ◽

Vol 30 ◽

pp. 14004

Author(s):

Dmitry Gulyaev ◽

Dmitry Dmitriev ◽

Alexander Toropov ◽

Nataly Valisheva ◽

Andrey Tsarev ◽

...

Keyword(s):

Refractive Index ◽

Quantum Wells ◽

Stark Effect ◽

Optical Modulator ◽

Energy Structure ◽

Interferometric Method ◽

Electrooptic Effect ◽

Quantum Confined Stark Effect ◽

Inp Substrate ◽

Electro Optical Modulator

The energy structure and the value of the electrooptic effect in heteroepitaxial structures (HES) with multiple InGaAlAs / InAlAs quantum wells have been studied. The interferometric method has been developed to determine small changes in the refractive index under transverse transmission of light through a layered structure. The length of the Mach-Zehnder interferometer for the modulator at HES with multiple InGaAlAs / InAlAs quantum wells has been chosen.

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Effect of Al Composition on the Deep Level Donors of AlxGa1-xSb/lnAs Single Quantum Wells

MRS Proceedings ◽

10.1557/proc-262-893 ◽

1992 ◽

Vol 262 ◽

Author(s):

Irai Lo ◽

W. C. Mitchel ◽

C. E. Stutz ◽

K. R. Evans ◽

M. O. Manasreh

Keyword(s):

Quantum Wells ◽

Carrier Concentration ◽

Electron Capture ◽

Low Temperatures ◽

Deep Level ◽

Time Dependent ◽

Universal Property ◽

Persistent Photoconductivity ◽

Single Quantum ◽

Deep Donor

ABSTRACTWe have performed Shubnikov-de Haas (SdH) measurements on the AlxGa1-xSb/InAs QW's with x from 0.1 to 1.0 under the negative persistent photoconductivity (NPPC) conditions and confirmed the prediction of Ionized Deep Donor model that the NPPC effect is a universal property for the materials containing ionized deep donors at low temperatures. The time-dependent recombination (electron capture) of the ionized deep donors is similar to that of DX centers. The saturated reduction of carrier concentration in the InAs well increases with increasing x, and rises steeply at about x=0.4. The concentration of deep donors which cause the NPPC in the AlxGa1-xSb/InAs QW's increases with the Al composition.

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