Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.8435 ◽

2005 ◽

Vol 44 (12) ◽

pp. 8435-8440 ◽

Author(s):

Kenji Shiojima ◽

Takashi Makimura ◽

Tetsuya Suemitsu ◽

Naoteru Shigekawa

Keyword(s):

Epitaxial Layer ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Crystal Quality ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors

Download Full-text

Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.7939 ◽

2004 ◽

Vol 43 (12) ◽

pp. 7939-7943 ◽

Author(s):

Makoto Miyoshi ◽

Masahiro Sakai ◽

Subramaniam Arulkumaran ◽

Hiroyasu Ishikawa ◽

Takashi Egawa ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors

Download Full-text

Studies of AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Silicon Carbide and Sapphire Substrates

10.7567/ssdm.2001.c-1-2 ◽

2001 ◽

Author(s):

S. Arulkumaran ◽

T. Egawa ◽

H. Ishikawa ◽

T. Jimbo

Keyword(s):

Silicon Carbide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors

Download Full-text

Comparative Analysis of Nano-Scale Structural and Electrical Properties in AlGaN/GaN High Electron Mobility Transistors on SiC and Sapphire Substrates

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2013.7631 ◽

2013 ◽

Vol 13 (10) ◽

pp. 7083-7088 ◽

Author(s):

Cong Wang ◽

Sung-Jin Cho ◽

Nam-Young Kim

Keyword(s):

Comparative Analysis ◽

Electrical Properties ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors ◽

Structural And Electrical Properties

Download Full-text

Electrostatic Discharge Effects on AlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.1941 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 1941-1943 ◽

Author(s):

Seung-Chul Lee ◽

Jin-Cherl Her ◽

Sang-Myeon Han ◽

Kwang-Seok Seo ◽

Min-Koo Han

Keyword(s):

Electron Mobility ◽

Electrostatic Discharge ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors

Download Full-text

Effect of epitaxial layer design on the microwave performance of high electron mobility transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583392 ◽

1986 ◽

Vol 4 (2) ◽

pp. 618 ◽

Author(s):

S. C. Palmateer

Keyword(s):

Epitaxial Layer ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

Download Full-text

Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4963064 ◽

2016 ◽

Vol 34 (5) ◽

pp. 051208 ◽

Author(s):

Fan Ren ◽

Stephen J. Pearton ◽

Shihyun Ahn ◽

Yi-Hsuan Lin ◽

Francisco Machuca ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors

Download Full-text

AlN/GaN high electron mobility transistors on sapphire substrates for Ka band applications

Journal of Semiconductors ◽

10.1088/1674-4926/37/4/044007 ◽

2016 ◽

Vol 37 (4) ◽

pp. 044007 ◽

Author(s):

Xubo Song ◽

Yuanjie Lü ◽

Guodong Gu ◽

Yuangang Wang ◽

Xin Tan ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Ka Band ◽

Sapphire Substrates ◽

Electron Mobility Transistors

Download Full-text

Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design

Journal of Electronic Materials ◽

10.1007/s11664-004-0195-6 ◽

2004 ◽

Vol 33 (5) ◽

pp. 422-425 ◽

Author(s):

L. Shen ◽

R. Coffie ◽

D. Buttari ◽

S. Heikman ◽

A. Chakraborty ◽

...

Keyword(s):

Epitaxial Layer ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

Download Full-text

Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates

Solid-State Electronics ◽

10.1016/j.sse.2005.08.014 ◽

2005 ◽

Vol 49 (10) ◽

pp. 1632-1638 ◽

Author(s):

S. Arulkumaran ◽

T. Egawa ◽

H. Ishikawa

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors

Download Full-text

Overcoming the poor crystal quality and DC characteristics of AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistors

physica status solidi (a) ◽

10.1002/pssa.201532894 ◽

2016 ◽

Vol 213 (8) ◽

pp. 2203-2207 ◽

Author(s):

Weihang Zhang ◽

Xiangdong Li ◽

Jincheng Zhang ◽

Haiqing Jiang ◽

Xin Xu ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Crystal Quality ◽

High Electron ◽

High Electron Mobility ◽

Double Heterostructure ◽

Electron Mobility Transistors ◽

The Poor ◽

Dc Characteristics

Download Full-text