Evidence for an alternative, hole‐trapping related random telegraph signal mechanism inn‐channel silicon‐on‐insulator metal‐oxide‐semiconductor transistors

Applied Physics Letters ◽

10.1063/1.108552 ◽

1993 ◽

Vol 62 (8) ◽

pp. 876-878 ◽

Author(s):

E. Simoen ◽

C. Claeys

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Random Telegraph Signal ◽

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1378329 ◽

2001 ◽

Vol 90 (2) ◽

pp. 866-870 ◽

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Self Consistent ◽

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Metal–oxide–semiconductor-compatible silicon based single electron transistor using bonded and etched back silicon on insulator material

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589739 ◽

1997 ◽

Vol 15 (6) ◽

pp. 2836 ◽

Author(s):

T. Köster

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Single Electron ◽

Oxide Semiconductor ◽

Single Electron Transistor ◽

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A highly sensitive broadband planar metal-oxide-semiconductor photo detector fabricated on a silicon-on-insulator substrate

Journal of Applied Physics ◽

10.1063/1.4893582 ◽

2014 ◽

Vol 116 (7) ◽

pp. 074513 ◽

Author(s):

V. Mikhelashvili ◽

D. Cristea ◽

B. Meyler ◽

S. Yofis ◽

Y. Shneider ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Highly Sensitive ◽

Insulator Substrate

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Comparisons of Radio-Frequency Performance of Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.7635 ◽

2007 ◽

Vol 46 (12) ◽

pp. 7635-7638 ◽

Author(s):

Yasushi Hiraoka ◽

Satoshi Matsumoto

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

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Effects of buried oxide on electrical performance of thin-film silicon-on-insulator metal–oxide–semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.369763 ◽

1999 ◽

Vol 85 (7) ◽

pp. 3912-3915 ◽

Author(s):

Jong-Wook Lee ◽

Min-Rok Oh ◽

Yo-Hwan Koh

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Electrical Performance ◽

Buried Oxide ◽

Effect Transistor

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Heterogeneous integration and precise alignment of InP-based photonic crystal lasers to complementary metal-oxide semiconductor fabricated silicon-on-insulator wire waveguides

Journal of Applied Physics ◽

10.1063/1.3319667 ◽

2010 ◽

Vol 107 (6) ◽

pp. 063103 ◽

Author(s):

T. J. Karle ◽

Y. Halioua ◽

F. Raineri ◽

P. Monnier ◽

R. Braive ◽

...

Keyword(s):

Photonic Crystal ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Heterogeneous Integration

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A New Structure of Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor to Suppress the Floating Body Effect

Chinese Physics Letters ◽

10.1088/0256-307x/20/5/350 ◽

2003 ◽

Vol 20 (5) ◽

pp. 767-769 ◽

Author(s):

Zhu Ming ◽

Lin Qing ◽

Zhang Zheng-Xuan ◽

Lin Cheng-Lu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Floating Body ◽

Body Effect ◽

Floating Body Effect ◽

Effect Transistor

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High frequency capacitance–voltage characterization of Al2O3/ZrO2/Al2O3 in fully depleted silicon-on-insulator metal–oxide–semiconductor capacitors

Applied Physics Letters ◽

10.1063/1.1579865 ◽

2003 ◽

Vol 83 (25) ◽

pp. 5238-5240 ◽

Author(s):

N. L. Zhang ◽

Z. T. Song ◽

Q. W. Shen ◽

Y. J. Wu ◽

Q. B. Liu ◽

...

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Capacitance Voltage

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Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.1533108 ◽

2003 ◽

Vol 93 (2) ◽

pp. 1230-1240 ◽

Author(s):

M. D. Croitoru ◽

V. N. Gladilin ◽

V. M. Fomin ◽

J. T. Devreese ◽

W. Magnus ◽

...

Keyword(s):

Metal Oxide ◽

Quantum Transport ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Effect Transistor

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