Independent determination of composition and relaxation of partly pseudomorphically grown Si‐Ge layers on silicon by a combination of standard x‐ray diffraction and transmission electron microscopy measurements
1974 ◽
Vol 32
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pp. 70-71
2015 ◽
Vol 644
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pp. 287-296
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2010 ◽
Vol 114
(39)
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pp. 16677-16684
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1982 ◽
Vol 40
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pp. 722-723
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2012 ◽
Vol 23
(8)
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pp. 1047-1063
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