SiO2formation by thermal evaporation of SiO in oxygen atmosphere used to fabrication of high performance polycrystalline silicon thin film transistors

Applied Physics Letters ◽

10.1063/1.110956 ◽

1994 ◽

Vol 64 (8) ◽

pp. 1018-1020 ◽

Author(s):

T. Sameshima ◽

A. Kohno ◽

M. Sekiya ◽

M. Hara ◽

N. Sano

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Thermal Evaporation ◽

Oxygen Atmosphere ◽

Silicon Thin Film

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High-performance polycrystalline silicon thin-film transistors prepared via the laser crystallization of the prepatterned channel layer on the bottom-gate structure

Thin Solid Films ◽

10.1016/j.tsf.2012.09.048 ◽

2013 ◽

Vol 529 ◽

pp. 421-425 ◽

Author(s):

Chao-Lung Wang ◽

I-Che Lee ◽

Chun-Yu Wu ◽

Yu-Ting Cheng ◽

Po-Yu Yang ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Laser Crystallization ◽

Silicon Thin Film ◽

Channel Layer ◽

Gate Structure ◽

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High-performance vertically stacked bottom-gate and top-gate polycrystalline silicon thin-film transistors for three-dimensional integrated circuits

Solid-State Electronics ◽

10.1016/j.sse.2012.05.016 ◽

2012 ◽

Vol 77 ◽

pp. 26-30 ◽

Author(s):

I-Che Lee ◽

Tsung-Che Tsai ◽

Chun-Chien Tsai ◽

Po-Yu Yang ◽

Chao-Lung Wang ◽

...

Keyword(s):

Thin Film ◽

Integrated Circuits ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Three Dimensional ◽

Silicon Thin Film ◽

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Development of high-performance polycrystalline silicon thin-film transistors (TFTs) using defect control process technologies

IEEE Electron Device Letters ◽

10.1109/led.2002.1015218 ◽

2002 ◽

Vol 23 (7) ◽

pp. 407-409 ◽

Author(s):

S. Higashi ◽

D. Abe ◽

Y. Hiroshima ◽

K. Miyashita ◽

T. Kawamura ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Control Process ◽

Silicon Thin Film ◽

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High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.l311 ◽

2002 ◽

Vol 41 (Part 2, No. 3B) ◽

pp. L311-L313 ◽

Author(s):

Akito Hara ◽

Fumiyo Takeuchi ◽

Michiko Takei ◽

Katsuyuki Suga ◽

Kenichi Yoshino ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Alkali Glass ◽

Lateral Crystallization

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High-Performance Excimer-Laser-Crystallized Polycrystalline Silicon Thin-Film Transistors with the Pre-Patterned Recessed Channel

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.066502 ◽

2012 ◽

Vol 51 ◽

pp. 066502

Author(s):

Chao-Lung Wang ◽

Huang-Chung Cheng ◽

I-Che Lee ◽

Chun-Yu Wu ◽

Yu-Ting Cheng ◽

...

Keyword(s):

Thin Film ◽

Excimer Laser ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Silicon Thin Film ◽

Recessed Channel

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High-Performance Polycrystalline Silicon Thin-Film Transistors with Low Trap Density at the Gate-SiO2/Si Interface Fabricated by Low-Temperature Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.9066 ◽

2006 ◽

Vol 45 (12) ◽

pp. 9066-9068

Author(s):

Daisuke Abe ◽

Satoshi Inoue ◽

Tatsuya Shimoda

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Trap Density ◽

Silicon Thin Film ◽

Low Temperature Process

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High-performance polycrystalline silicon thin-film transistors integrating sputtered aluminum-oxide gate dielectric with bridged-grain active channel

Semiconductor Science and Technology ◽

10.1088/0268-1242/28/11/115003 ◽

2013 ◽

Vol 28 (11) ◽

pp. 115003 ◽

Author(s):

Meng Zhang ◽

Wei Zhou ◽

Rongsheng Chen ◽

Man Wong ◽

Hoi-Sing Kwok

Keyword(s):

Thin Film ◽

Aluminum Oxide ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Gate Dielectric ◽

Silicon Thin Film ◽

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High Performance Low Temperature Polycrystalline Silicon Thin Film Transistors on Non-alkaline Glass Produced Using Diode Pumped Solid State Continuous Wave Laser Lateral Crystallization

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.1269 ◽

2004 ◽

Vol 43 (4A) ◽

pp. 1269-1276 ◽

Author(s):

Akito Hara ◽

Michiko Takei ◽

Fumiyo Takeuchi ◽

Katsuyuki Suga ◽

Kenichi Yoshino ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Diode Pumped ◽

Lateral Crystallization

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High‐Performance Polycrystalline Silicon Thin‐Film Transistors without Source/Drain Doping by Utilizing Anisotropic Conductivity of Bridged‐Grain Lines

Advanced Electronic Materials ◽

10.1002/aelm.201900961 ◽

2019 ◽

Vol 6 (2) ◽

pp. 1900961 ◽

Author(s):

Meng Zhang ◽

Haotao Lin ◽

Sunbin Deng ◽

Rongsheng Chen ◽

Guijun Li ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Silicon Thin Film ◽

Anisotropic Conductivity

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High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications

IEEE Transactions on Electron Devices ◽

10.1109/16.822287 ◽

2000 ◽

Vol 47 (2) ◽

pp. 404-409 ◽

Author(s):

Zhiguo Meng ◽

Mingxiang Wang ◽

Man Wong

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Silicon Thin Film

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