High concentration phosphorus doping of polycrystalline silicon by low temperature direct vapor phase diffusion of phosphine followed by rapid thermal annealing

AbstractConventional and Rapid Thermal Annealing of Semi-Insulating Polycrystalline Silicon layers obtained by Low Pressure Chemical Vapor Deposition (LPCVD) from disilane Si2H6 have been performed in order to determine the structural modifications induced on the layers by these thermal treatments. The study of these modifications has been carried out by several analysis methods like FTIR, XPS, TEM, RAMAN and ellipsometry. The results obtained are presented, contrasted and discussed in this work.

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Growth of very large grains in polycrystalline silicon thin films by the sequential combination of vapor induced crystallization using AlCl3 and pulsed rapid thermal annealing

Current Applied Physics ◽

10.1016/j.cap.2012.04.010 ◽

2012 ◽

Vol 12 (6) ◽

pp. 1454-1458 ◽

Cited By ~ 5

Author(s):

Kyung Min Ahn ◽

Seung Mo Kang ◽

Byung Tae Ahn

Keyword(s):

Thin Films ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Polycrystalline Silicon ◽

Silicon Thin Films ◽

Sequential Combination ◽

Induced Crystallization

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Substrates Dependent Low Temperature Fabrication of Silver Nanoparticles Using Rapid Thermal Annealing for Light Trapping Application

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2018.15551 ◽

2018 ◽

Vol 18 (11) ◽

pp. 7739-7748 ◽

Cited By ~ 1

Author(s):

Bidyut Barman ◽

Hrishikesh Dhasmana ◽

Abhishek Verma ◽

Amit Kumar ◽

D. N Singh ◽

...

Keyword(s):

Silver Nanoparticles ◽

Low Temperature ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Light Trapping

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Interfacial reactions of Ni on Si1−xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing

Journal of Applied Physics ◽

10.1063/1.1482423 ◽

2002 ◽

Vol 92 (1) ◽

pp. 214-217 ◽

Cited By ~ 50

Author(s):

H. B. Zhao ◽

K. L. Pey ◽

W. K. Choi ◽

S. Chattopadhyay ◽

E. A. Fitzgerald ◽

...

Keyword(s):

Low Temperature ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Interfacial Reactions

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Characterizations of Ultra-thin Dielectrics Grown by Microwave Afterglow O2/N2O Plasma Oxidation at Low Temperature with Rapid Thermal Annealing

MRS Proceedings ◽

10.1557/proc-387-271 ◽

1995 ◽

Vol 387 ◽

Cited By ~ 1

Author(s):

Po-ching Chen ◽

Klaus Yung-jane Hsu ◽

Joseph J. Loferski ◽

Huey-liang Hwang

Keyword(s):

Low Temperature ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Photoelectron Spectroscopy ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Plasma Oxidation ◽

X Ray ◽

Thin Dielectrics

AbstractMicrowave afterglow plasma oxidation at a low temperature (600 °C ) and rapid thermal annealing (RTA) were combined to grow high quality ultra-thin dielectrics. This new approach has a low thermal budget. The mid-gap interface state density of oxides pretreated in N2O plasma was decreased to about 5×1010 cm−2eV−1 after rapid thermal annealing at 950 °C.It was found that RTA is very effective for relieving the oxide stress and reducing the interface state density. Nitrogen incorporated in oxides by the N2O plasma pretreatment of the Si surface helped to reduce the interface state density. Microstructures of ultra-thin oxide grown by microwave afterglow oxidation with or without RTA were revealed by extended-X-ray-absorption-finestructure (EXAFS) and X-ray photoelectron spectroscopy (XPS) analysis.

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Formation of Silicides by Rapid Thermal Annealing Over Polycrystalline Silicon

MRS Proceedings ◽

10.1557/proc-54-753 ◽

1985 ◽

Vol 54 ◽

Author(s):

J. Narayan ◽

T. A. Stephenson ◽

T. Brat ◽

D. Fathy ◽

S. J. Pennycook

Keyword(s):

Titanium Oxide ◽

Sheet Resistance ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Polycrystalline Silicon ◽

Annealing Treatment ◽

External Layer ◽

Rich Mixture ◽

Thermal Annealing Treatment ◽

Rapid Thermal Annealing Treatment

ABSTRACTThe formation of titanium suicide over polycrystalline silicon has been investigated after rapid thermal annealing treatment in nitrogen and argon ambients. After rapid thermal annealing 300 Å thick titanium overlayer at 900°C for 10 seconds, the sheet resistance of about 3 Ω/□ was achieved, which decreased to 2 Ω/□ after 1100°C / 10s treatment. The TiSi2 Phase was found to be stable after RTA treatments up to 1100°C /10s with no or negligible migration of titanium along the grain boundaries in polycrystalline silicon. In the nitrogen ambient, an external layer (titanium rich, mixture of titanium oxide and nitride) was observed to form after the RTA treatment, but the surface was found clean in the argon ambient.

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