Dopant incorporation during epitaxial growth of a multicomponent oxide thin film from vapor phase: A case study of Fe/YBa2Cu3O7−δ system

1995 ◽  
Vol 66 (13) ◽  
pp. 1674-1676 ◽  
Author(s):  
S. B. Ogale ◽  
I. Takeuchi ◽  
M. Rajeswari ◽  
R. L. Greene ◽  
T. Venkatesan ◽  
...  
Keyword(s):  
Thin Film ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Oxide Thin Film ◽  
Multicomponent Oxide ◽  
Dopant Incorporation

Photovoltaic Phenomena in Thin Film ZnTe-CdSe Heterojunctions

2001 ◽  
Author(s):  
Alexandru Focsha ◽  
Petru Gashin ◽  
Alexei Simashkevich
Keyword(s):  
Thin Film ◽  
Thin Layer ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Doping Level ◽  
Spectral Dependence ◽  
Wavelength Region

Abstract Thin layer ZnTe-CdSe heterojunctions were produced by vapor phase epitaxial growth of ZnTe and CdSe layers on mica and single-crystal ZnSe substrates. These heterojunctions photosensitivity covers the wavelength region of 0.56–0.85 μm. The shape of photosensitivity spectral dependence of ZnTe-CdSe heterojunction depends on the components thickness and their doping level. Thin layer ZnTe-CdSe epitaxial heterojunction parameters under illumination of 80 mW/cm2 (AM1.5) are: FF=0.53, Uoc=0.72V, Isc=14.8 mA/cm2, efficiency η=7.1%. Thin film polycrystalline ZnTe-CdSe heterojunctions having the efficiency η=4.3%, Uoc=0.54 V, Isc=10.6 mA/cm2 were fabricated by using As or Cu doped ZnTe layers and In doped CdSe layers produced by HWT.

On growth of epitaxial vanadium oxide thin film on sapphire (0001)

2010 ◽  
Vol 25 (3) ◽  
pp. 422-426 ◽  
Author(s):  
Tsung-Han Yang ◽  
Chunming Jin ◽  
Ravi Aggarwal ◽  
R.J. Narayan ◽  
Jay Narayan
Keyword(s):  
Thin Film ◽  
Vanadium Oxide ◽  
Epitaxial Growth ◽  
Thermal Hysteresis ◽  
Large Angle ◽  
Film Plane ◽  
Oxide Thin Film ◽  
Resistance Change ◽  
Transmission Electron ◽  
Vanadium Oxide Thin Film

We report the characteristics of epitaxial growth and properties of vanadium oxide (VO2) thin films on sapphire (0001) substrates. Pulsed laser deposition was used to grow (002) oriented VO2 films on sapphire (0001). Transmission electron microscopy studies showed that the orientation relationship between the substrate and the thin film is: (002)f2∥(0006)sub3 and [010]f2 ∥sub. It was also established that VO2 has three different orientations in the film plane which are rotated by 60° from each other. The epitaxial growth of vanadium oxide on sapphire (0001) has been explained in the framework of domain matching epitaxy (DME). Electrical resistivity measurements as a function of temperature showed a sharp transition with a hysteresis width ˜5 °C, and large resistance change (˜1.5 × 104) from the semiconductor phase to the metal phase. It is interesting to note that in spite of large angle twin boundaries in these VO2 films, the SMT characteristics are better than those observed for polycrystalline films. The higher width of thermal hysteresis for the VO2 film on c-sapphire compared to a bulk single VO2 crystal and a single-crystal VO2 film on r-sapphire can be attributed to the existence of these large-angle twin grain boundaries. These findings can provide insight into the phase transformation characteristics of VO2, which has important applications in switching and memory devices.

Reduction Mechanism of O[sub 2] in DMSO and Metal Oxide Thin Film Formation: CdO Case Study

2009 ◽  
Vol 12 (8) ◽  
pp. H288 ◽  
Author(s):  
R. Henríquez ◽  
P. Grez ◽  
E. Muñoz ◽  
E. A. Dalchiele ◽  
R. Marotti ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Film Formation ◽  
Oxide Thin Film ◽  
Reduction Mechanism ◽  
Metal Oxide Thin Film ◽  
Thin Film Formation

Epitaxial growth of perovskite-type oxide thin film on (111)SrTiO3 substrate using (101)PdO as a buffer layer

2018 ◽  
Vol 57 (11S) ◽  
pp. 11UF04 ◽  
Author(s):  
Hiroki Tanaka ◽  
Kiyoshi Uchiyama ◽  
Takahiro Oikawa ◽  
Takao Shimizu ◽  
Hiroshi Funakubo
Keyword(s):  
Thin Film ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Oxide Thin Film ◽  
Srtio3 Substrate ◽  
Perovskite Type Oxide ◽  
Perovskite Type

Epitaxial growth of cerium oxide thin film buffer layers deposited by d.c. magnetron sputtering

2001 ◽  
Vol 388 (1-2) ◽  
pp. 177-182 ◽  
Author(s):  
N. Savvides ◽  
A. Thorley ◽  
S. Gnanarajan ◽  
A. Katsaros
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Cerium Oxide ◽  
Buffer Layers ◽  
Oxide Thin Film

Atomic Scale Control of Epitaxial Growth and Interface in Oxide Thin Films for Advanced Oxide Lattice Engineering

1995 ◽  
Vol 401 ◽  
Author(s):  
M. Yoshimoto ◽  
T. Maeda ◽  
T. Ohnishi ◽  
G. H. Lee ◽  
H. Koinuma
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Molecular Layer ◽  
Atomic Scale ◽  
In Situ Monitoring ◽  
Oxide Thin Film ◽  
Oxide Thin Films ◽  
Thin Film Technology

AbstractAdvanced thin film technology based on laser MBE has enabled us to control the molecular layer-by-layer epitaxial growth and interface structure of oxide thin films in an atomic scale. Molecular layer epitaxy of oxide thin film growth was verified from in situ monitoring of intensity oscillation in reflection high energy electron diffraction (RHEED). Advanced oxide thin film technology was applied to form oxide superlattices for quantum functional oxides and to achieve lattice-matched heteroepitaxy in oxide films on silicon substrate for all epitaxial oxide/silicon hybrid devices. The key factors to develop oxide lattice engineering are discussed with respect to not only in situ monitoring of growth process using RHEED but also atomic regulation of the substrate surface by atomic force microscopy and ion scattering spectroscopy.

High Sensitivity pH Sensors based on Amorphous Indium-gallium-zinc Oxide Thin-film Transistors

2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Sensitivity ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Ph Sensors ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium
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