Atomic Scale Control of Epitaxial Growth and Interface in Oxide Thin Films for Advanced Oxide Lattice Engineering

1995 ◽  
Vol 401 ◽  
Author(s):  
M. Yoshimoto ◽  
T. Maeda ◽  
T. Ohnishi ◽  
G. H. Lee ◽  
H. Koinuma
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Molecular Layer ◽  
Atomic Scale ◽  
In Situ Monitoring ◽  
Oxide Thin Film ◽  
Oxide Thin Films ◽  
Thin Film Technology

AbstractAdvanced thin film technology based on laser MBE has enabled us to control the molecular layer-by-layer epitaxial growth and interface structure of oxide thin films in an atomic scale. Molecular layer epitaxy of oxide thin film growth was verified from in situ monitoring of intensity oscillation in reflection high energy electron diffraction (RHEED). Advanced oxide thin film technology was applied to form oxide superlattices for quantum functional oxides and to achieve lattice-matched heteroepitaxy in oxide films on silicon substrate for all epitaxial oxide/silicon hybrid devices. The key factors to develop oxide lattice engineering are discussed with respect to not only in situ monitoring of growth process using RHEED but also atomic regulation of the substrate surface by atomic force microscopy and ion scattering spectroscopy.

Atomic-scale Analysis of Laser MBE Growth of Oxide Thin Films by in situ Rheed and Caiciss

1997 ◽  
Vol 502 ◽  
Author(s):  
M. Yoshimoto ◽  
T. Ohnishi ◽  
G-H. Lee ◽  
K. Sasaki ◽  
H. Maruta ◽  
...  
Keyword(s):  
Thin Films ◽  
High Energy ◽  
Atomic Scale ◽  
Oxide Thin Film ◽  
Ex Situ ◽  
Ion Scattering ◽  
Oxide Thin Films ◽  
Ion Scattering Spectroscopy ◽  
Laser Mbe

ABSTRACTAtomic-scale growth analysis of oxide thin films was performed by in situ reflection high energy electron diffraction (RHEED) and coaxial impact collision ion scattering spectroscopy (CAICISS) combined with Laser MBE. On single crystal substrates with atomically flat terrace and step structures, the two-dimensional nucleation followed by molecular layer-by-layer growth was verified by in situ monitoring of RHEED intensity oscillations, as well as ex situ atomic force microscopy (AFM) observation, for the growth of BaTiO3, Al2O3 and BaO thin films. The epitaxial BaTiO3 films grown on SrTiO3(100) and c-axis oriented Bi2Sr2CaCu2Ox (Bi2212) superconducting films were subjected to in situ CAICISS measurements in order to examine the topmost surface structure. The key factors to develop oxide lattice engineering are discussed with respect to not only in situ monitoring of the growth process using RHEED but also the atomic regulation of the substrate surface by AFM and ion scattering spectroscopy. The present work also demonstrates the advanced oxide thin film processing based on the laser MBE to control the growth and surface of films on an atomic scale.

Facile patterning of amorphous indium oxide thin films based on a gel-like aqueous precursor for low-temperature, high performance thin-film transistors

2016 ◽  
Vol 4 (10) ◽  
pp. 2072-2078 ◽  
Author(s):  
Yuzhi Li ◽  
Linfeng Lan ◽  
Peng Xiao ◽  
Zhenguo Lin ◽  
Sheng Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Oxide Thin Films ◽  
Indium Oxide Thin Film

Facile patterning of chloride-based precursor films for low-temperature, high performance indium oxide thin-film transistors.

Fabrication of a resistive switching gallium oxide thin film with a tailored gallium valence state and oxygen deficiency by rf cosputtering process

RSC Advances ◽  
2016 ◽  
Vol 6 (11) ◽  
pp. 8964-8970 ◽  
Author(s):  
Chiharu Kura ◽  
Yoshitaka Aoki ◽  
Etsushi Tsuji ◽  
Hiroki Habazaki ◽  
Manfred Martin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Valence State ◽  
Gallium Oxide ◽  
Oxygen Deficiency ◽  
Oxide Thin Film ◽  
Oxide Thin Films

Resistive switching gallium oxide thin films with tailored oxygen deficiency and gallium valence state were fabricated by rf cosputtering of Ga2O3 and Cr.

Gas-Sensing Property Evaluation of Reactively Sputtered Chromium Oxide Thin Films

2008 ◽  
Vol 55-57 ◽  
pp. 285-288 ◽  
Author(s):  
C. Oros ◽  
Anurat Wisitsoraat ◽  
Pichet Limsuwan ◽  
M. Horpathum ◽  
V. Patthanasettakul ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Oxide ◽  
Chromium Oxide ◽  
Flow Rate ◽  
Gas Sensing ◽  
Oxygen Flow Rate ◽  
Oxide Thin Film ◽  
Oxide Thin Films ◽  
Sensing Applications

Metal oxide thin film materials, including SnO2, TiO2, WO3, MoO3, ZnO, have been widely studied for gas sensing applications. However, new gas-sensing materials with distinct and diverse characteristics for new sensing applications such as electronic nose are still being explored. Presently, gas sensing properties of other metal oxides have not yet been extensively explored. Chromium oxide is an interesting metal oxide for gas sensor because of its temperature stability and moderate electrical conductivity. Nevertheless, there have been very few studies on gas sensing behaviors of this material. In this work, chromium oxide thin films were systematically studied by reactive sputtering with varying sputtering parameter including oxygen flow rate. Structural characterization by means of scanning electron microscopy and X-ray diffraction reveals that the films have sub-micometer grain-size with Rhombohedral phase of Cr2O3. Gas-sensing performances of sputtered chromium oxide thin film have been characterized toward ethanol and acetylene sensing. It was found that chromium oxide thin films exhibit p-type conductivity with increased resistance when exposed to ethanol and acetylene, which are reducing gases. In addition, sensitivity to both acetylene and ethanol tend to improve as oxygen flow rate increases. Furthermore, the chromium oxide thin films exhibit high sensitivity at moderate temperature of 250-300 °C with minimum operating temperature of 200 °C.

Novel Cu-Mg-Ni-Zn-Mn Oxide Thin Film Electrodes for NIR Photodetector Applications

2021 ◽  
Author(s):  
Tzu-Hsuan Wang ◽  
Chia-Tung Kuo ◽  
Pin-Hung Chung ◽  
Chao-I Liu ◽  
You-Yan Lu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Oxide Thin Film ◽  
Oxide Thin Films ◽  
Mn Oxide ◽  
Post Annealing ◽  
Narrow Bandgap ◽  
Thin Film Electrodes

This study reports the optical and photoconductive characteristics of the Cu-Mg-Ni-Zn-Mn oxide thin films with and without post-annealing in air. The Cu-Mg-Ni-Zn-Mn oxide thin films reveal a narrow bandgap of...

Defect engineering in perovskite oxide thin films

2021 ◽  
Author(s):  
Yunlong Sun ◽  
Jack Yang ◽  
Danyang Wang ◽  
Sean Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Perovskite Oxide ◽  
Oxide Thin Film ◽  
Multifunctional Materials ◽  
Defect Engineering ◽  
Oxide Thin Films ◽  
Photovoltaic Properties ◽  
Microelectronic Devices ◽  
Perovskite Oxide Thin Films

Perovskite oxide thin film is a category of multifunctional materials that have intriguing electrical, magnetic, and photovoltaic properties that can be harnessed combinatorially in future microelectronic devices. However, the inevitable...

214 In-situ observation of epitaxial growth of amorphous oxide thin films

2007 ◽  
Vol 2007.42 (0) ◽  
pp. 223-224
Author(s):  
Yuta NOHARA ◽  
Takao TSURUI ◽  
Yuki NAGAO ◽  
Noriko SATA ◽  
Fumitada IGUCHI ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
In Situ Observation ◽  
Oxide Thin Films ◽  
Amorphous Oxide

scholarly journals Structural and tribological properties of tungsten oxide thin film on a silicon substrate

2020 ◽  
Vol 44 (11-12) ◽  
pp. 744-749
Author(s):  
Siamak Ziakhodadadian ◽  
Tianhui Ren
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Tungsten Oxide ◽  
Oxide Thin Film ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
X Ray ◽  
Tungsten Oxide Thin Films ◽  
Scanning Electron

In this work, tungsten oxide thin films are deposited on silicon substrates using the hot filament chemical vapor deposition system. The influence of substrate temperature on the structural, morphological, and elemental composition of the tungsten oxide thin films is investigated using X-ray diffraction, field-emission scanning electron microscopy, and X-ray photoelectron spectroscopy techniques. Also, the mechanical and tribological properties of these thin films are considered using nanoindentation and scratch tests. Based on X-ray diffraction results, it can be concluded that tungsten oxide thin films are synthesized with a cubic WO3 structure. From field-emission scanning electron microscopy images, it can be seen that tungsten oxide thin films are made of crystal clusters which have grown vertically on the substrate surface. In addition, the results exhibit two asymmetric W4d5/2 and W4d7/2 peaks which can be assigned to W5+ and W4+ species, respectively. The mechanical results show that the hardness and the elastic modulus increase on raising the substrate temperature up to 600 °C. From the tribological performances, the friction coefficient of the tungsten oxide thin film decreases on increasing the substrate temperature.

Optical in situ monitoring of complex oxide thin film laser molecular beam epitaxy

2001 ◽  
Vol 227-228 ◽  
pp. 950-954
Author(s):  
Fan Chen ◽  
Huibin Lu ◽  
Tong Zhao ◽  
Zhenghao Chen ◽  
Guozhen Yang
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Complex Oxide ◽  
In Situ Monitoring ◽  
Oxide Thin Film ◽  
Laser Molecular Beam Epitaxy

scholarly journals Composition-tuned metal–organic thin-film structures based on photoswitchable azobenzene by ALD/MLD

2020 ◽  
Vol 49 (32) ◽  
pp. 11310-11316
Author(s):  
Aida Khayyami ◽  
Anish Philip ◽  
Jenna Multia ◽  
Maarit Karppinen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Molecular Layer ◽  
Organic Thin Film ◽  
Molecular Layer Deposition ◽  
Layer Deposition ◽  
Metal Organic

We demonstrate the fabrication of in-situ crystalline thin films of various azobenzene (AZO) based photoresponsive metal–organic structures using the atomic/molecular layer deposition (ALD/MLD) technique.

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