Double integration of current transients in response to an abrupt change of applied bias: Application to dielectrics

1995 ◽  
Vol 66 (11) ◽  
pp. 5360-5366 ◽  
Author(s):  
I. Thurzo ◽  
D. Barančok ◽  
M. Haluška
Keyword(s):  
Abrupt Change ◽  
Applied Bias ◽  
Double Integration ◽  
Current Transients

Elastic Stress Singularities: Implications for the Attachment of Tendon to Bone

2011 ◽  
Author(s):  
Yanxin Liu ◽  
Victor Birman ◽  
Chanqing Chen ◽  
Stavros Thomopoulos ◽  
Guy M. Genin
Keyword(s):  
Stress Distribution ◽  
Abrupt Change ◽  
Elastic Stress ◽  
Insertion Site ◽  
Stress Singularities ◽  
Local Stresses ◽  
Material Mismatch ◽  
Moduli Of Elasticity

The material mismatch at the attachment of tendon to bone is amongst the most severe for any tensile connection in nature. This is related to the large difference between the stiffness of tendon and bone, whose moduli of elasticity vary by two orders of magnitude. Predictably, such an abrupt change in the stiffness realized over a very narrow insertion site results in high local stresses. One of the implications of the stress distribution is a potential for stress singularities at the junction of the insertion to the bone.

scholarly journals Study of the Hemodynamics Effects of an Isolated Systolic Hypertension (ISH) Condition on Cerebral Aneurysms Models, Using FSI Simulations

2021 ◽  
Vol 11 (6) ◽  
pp. 2595
Author(s):  
José Barahona ◽  
Alvaro Valencia ◽  
María Torres
Keyword(s):  
Systolic Hypertension ◽  
Arterial Wall ◽  
Abrupt Change ◽  
Cerebral Aneurysms ◽  
Rupture Risk ◽  
Pressure Condition ◽  
Isolated Systolic Hypertension ◽  
Hemodynamic Changes ◽  
Physiological Conditions ◽  
Relative Residence Time

Hemodynamics is recognized as a relevant factor in the development and rupture of cerebral aneurysms, so further studies related to different physiological conditions in human represent an advance in understanding the pathology and rupture risk. In this paper, Fluid-structure interaction simulations (FSI) were carried out in six models of cerebral aneurysms, in order to study the hemodynamics effects of an isolated systolic hypertension (ISH) condition and compare it to a normal or normotensive pressure condition and a higher hypertension condition. Interestingly, the ISH condition showed, in general, the greatest hemodynamics changes, evidenced in the Time-Averaged Wall Shear Stress (TAWSS), Oscillatory Shear Index (OSI), and Relative Residence Time (RRT) parameters, with respect to a normal condition. These results could imply that a not high-pressure condition (ISH), characterized with a different shape and an abrupt change in its diastolic and systolic range may present more adverse hemodynamic changes compared to a higher-pressure condition (such as a hypertensive condition) and therefore have a greater incidence on the arterial wall remodeling and rupture risk.

scholarly journals Perspective on the Response of Turbulent Pipe Flows to Strong Perturbations

Fluids ◽  
2021 ◽  
Vol 6 (6) ◽  
pp. 208
Author(s):  
Liuyang Ding ◽  
Tyler Van Buren ◽  
Ian E. Gunady ◽  
Alexander J. Smits
Keyword(s):  
Pipe Flow ◽  
Abrupt Change ◽  
Pipe Wall ◽  
Surface Condition ◽  
Initial Response ◽  
Body Of Revolution ◽  
Future Directions ◽  
Pipe Flows ◽  
Roughness Elements ◽  
Pipe Geometry

Pipe flow responds to strong perturbations in ways that are fundamentally different from the response exhibited by boundary layers undergoing a similar perturbation, primarily because of the confinement offered by the pipe wall, and the need to satisfy continuity. We review such differences by examining previous literature, with a particular focus on the response of pipe flow to three different kinds of disturbances: the abrupt change in surface condition from rough to smooth, the obstruction due to presence of a single square bar roughness elements of different sizes, and the flow downstream of a streamlined body-of-revolution placed on the centerline of the pipe. In each case, the initial response is strongly influenced by the pipe geometry, but far downstream all three flows display a common feature, which is the very slow, second-order recovery that can be explained using a model based on the Reynolds stress equations. Some future directions for research are also given.

scholarly journals Influence of Applied Bias Voltage on the Composition, Structure, and Properties of Ti:Si-Codoped a-C:H Films Prepared by Magnetron Sputtering

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Jinlong Jiang ◽  
Qiong Wang ◽  
Yubao Wang ◽  
Zhang Xia ◽  
Hua Yang ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Tribological Properties ◽  
Structure And Properties ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Methane Mixture ◽  
Composition Structure

The titanium- and silicon-codoped a-C:H films were prepared at different applied bias voltage by magnetron sputtering TiSi target in argon and methane mixture atmosphere. The influence of the applied bias voltage on the composition, surface morphology, structure, and mechanical properties of the films was investigated by XPS, AFM, Raman, FTIR spectroscopy, and nanoindenter. The tribological properties of the films were characterized on an UMT-2MT tribometer. The results demonstrated that the film became smoother and denser with increasing the applied bias voltage up to −200 V, whereas surface roughness increased due to the enhancement of ion bombardment as the applied bias voltage further increased. The sp3carbon fraction in the films monotonously decreased with increasing the applied bias voltage. The film exhibited moderate hardness and the superior tribological properties at the applied bias voltage of −100 V. The tribological behaviors are correlated to the H/E or H3/E2ratio of the films.

scholarly journals WO3/BiVO4: impact of charge separation at the timescale of water oxidation

2019 ◽  
Vol 10 (9) ◽  
pp. 2643-2652 ◽  
Author(s):  
Shababa Selim ◽  
Laia Francàs ◽  
Miguel García-Tecedor ◽  
Sacha Corby ◽  
Chris Blackman ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Water Oxidation ◽  
Charge Separation ◽  
Carrier Dynamics ◽  
Applied Bias ◽  
Charge Carrier Dynamics

Unveiling the role of applied bias on the charge carrier dynamics in the WO3/BiVO4 junction during water oxidation.

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