Effect of rapid thermal annealing on the electrical and physical properties of metalorganic chemical‐vapor‐deposited TiN

1996 ◽  
Vol 68 (5) ◽  
pp. 670-672 ◽  
Author(s):  
S. C. Sun ◽  
M. H. Tsai
Keyword(s):  
Physical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited ◽  
Metalorganic Chemical

Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition

1995 ◽  
Vol 34 (Part 1, No. 12A) ◽  
pp. 6321-6325 ◽  
Author(s):  
Chien-Jen Wang ◽  
Ming-Shiann Feng ◽  
ShihHsiungChan ◽  
Janne-Wha Wu ◽  
Chun-Yen Chang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Metalorganic Chemical

Rapid thermal annealing effects on the properties of plasma‐enhanced chemical vapor deposited tungsten films

1991 ◽  
Vol 70 (4) ◽  
pp. 2366-2369 ◽  
Author(s):  
Jong‐Sung Hong ◽  
Yong Tae Kim ◽  
Suk‐Ki Min ◽  
Tae Won Kang ◽  
Chi Yhou Hong
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited ◽  
Annealing Effects

Silicon Recrystallization in Sipos Material Obtained by Disilane

1995 ◽  
Vol 403 ◽  
Author(s):  
J. J. Pedroviejo ◽  
B. Garrido ◽  
J. C. Ferrer ◽  
A. Cornet ◽  
E. Scheid ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Thermal Treatments ◽  
Structural Modifications ◽  
Pressure Chemical

AbstractConventional and Rapid Thermal Annealing of Semi-Insulating Polycrystalline Silicon layers obtained by Low Pressure Chemical Vapor Deposition (LPCVD) from disilane Si2H6 have been performed in order to determine the structural modifications induced on the layers by these thermal treatments. The study of these modifications has been carried out by several analysis methods like FTIR, XPS, TEM, RAMAN and ellipsometry. The results obtained are presented, contrasted and discussed in this work.

Metalorganic chemical vapor deposited buffer layer in metal–ferroelectric–insulator–semiconductor diodes

2009 ◽  
Vol 149 (45-46) ◽  
pp. 2013-2016 ◽  
Author(s):  
R. Thomas ◽  
R.E. Melgarejo ◽  
N.M. Murari ◽  
S.P. Pavunny ◽  
R.S. Katiyar
Keyword(s):  
Buffer Layer ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited ◽  
Metalorganic Chemical
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