Metalorganic chemical vapor deposited buffer layer in metal–ferroelectric–insulator–semiconductor diodes

2009 ◽  
Vol 149 (45-46) ◽  
pp. 2013-2016 ◽  
Author(s):  
R. Thomas ◽  
R.E. Melgarejo ◽  
N.M. Murari ◽  
S.P. Pavunny ◽  
R.S. Katiyar
Keyword(s):  
Buffer Layer ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited ◽  
Metalorganic Chemical

scholarly journals Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane Sapphire

1999 ◽  
Vol 4 (S1) ◽  
pp. 634-641 ◽  
Author(s):  
M. Sumiya ◽  
T. Ohnishi ◽  
M. Tanaka ◽  
A. Ohtomo ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy ◽  
Metalorganic Chemical

Control of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical properties of 1.2μm GaN films were influenced by the different growth mode due to the polar direction. Coaxial impact collision ion scattering spectroscopy revealed that the polarity composition of a buffer layer on nitrided sapphire varied by annealing in a H2 atmosphere. It was considered that the systematic variation of the surface morphology was caused by the polarity composition of the buffer layer.

Growth and structural analysis of metalorganic chemical vapor deposited (112̄0) MgxZn1−xO (0

2003 ◽  
Vol 82 (5) ◽  
pp. 742-744 ◽  
Author(s):  
S. Muthukumar ◽  
J. Zhong ◽  
Y. Chen ◽  
Y. Lu ◽  
T. Siegrist
Keyword(s):  
Structural Analysis ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited ◽  
Metalorganic Chemical

High-resolution electron microscopy investigations of stacking faults in Y1Ba2Cu3O7−δ metalorganic chemical vapor deposited thin films

1999 ◽  
Vol 14 (7) ◽  
pp. 2732-2738 ◽  
Author(s):  
Ch. Grigis ◽  
S. Schamm ◽  
D. Dorignac
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Image Matching ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Chemical Vapor Deposited ◽  
Structural Imperfections ◽  
Metalorganic Chemical

New structural planar defects in Ba-deficient Y1Ba2Cu3O7−δ (YBCO) (1:1.6:3) thin films grown on NdGaO3 and SrTiO3 substrates by metalorganic chemical vapor deposition have been observed by means of high-resolution electron microscopy. The defects are associated with perturbations of the YBCO “1:2:3” stacking sequences along the c direction, which give rise to structural variants with locally “2:5:7,” “3:4:7,” or “4:6:10” cationic stoichiometries. The defects can be consistently interpreted as CuO–YO–CuO/CuO conversions or YO/BaO (BaO/YO) interconversions in the (a,b) planes and extending over a few nanometers along the c axis. Structural models based on image matching with simulations are proposed for two particular cases. It is thought that these structural imperfections can be effective sites of flux pinning.

Study on the effect of heat treatment conditions on metalorganic-chemical-vapor-deposited ferroelectric Hf0.5Zr0.5O2thin film on Ir electrode

2014 ◽  
Vol 53 (9S) ◽  
pp. 09PA04 ◽  
Author(s):  
Takao Shimizu ◽  
Tatsuhiko Yokouchi ◽  
Takahisa Shiraishi ◽  
Takahiro Oikawa ◽  
P. S. Sankara Rama Krishnan ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Chemical Vapor ◽  
Treatment Conditions ◽  
Chemical Vapor Deposited ◽  
Metalorganic Chemical

Erratum: “Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates” [J. Appl. Phys. 90, 6011 (2001)]

2002 ◽  
Vol 91 (10) ◽  
pp. 6778
Author(s):  
E. Valcheva ◽  
T. Paskova ◽  
M. V. Abrashev ◽  
P. P. Paskov ◽  
P. O. Å. Persson ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Chemical Vapor Deposited ◽  
Metalorganic Chemical
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