Effect of fluorine on chemical and electrical properties of room temperature oxide films prepared by plasma enhanced chemical vapor deposition

1998 ◽  
Vol 72 (10) ◽  
pp. 1247-1249 ◽  
Author(s):  
Kihong Kim ◽  
Juho Song ◽  
Daehyuk Kwon ◽  
G. S. Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Temperature Oxide

Effect of deposition temperature on the characteristics of hafnium oxide films deposited by metalorganic chemical vapor deposition using amide precursor

2004 ◽  
Vol 19 (2) ◽  
pp. 584-589 ◽  
Author(s):  
Kenji Takahashi ◽  
Hiroshi Funakubo ◽  
Shiro Hino ◽  
Makoto Nakayama ◽  
Naoki Ohashi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Hafnium Oxide ◽  
Deposition Temperature ◽  
Metalorganic Chemical Vapor Deposition ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Metalorganic Chemical

Hafnium oxide films were deposited on silicon substrates at deposition temperatures ranging from 190 to 500 °C by metalorganic chemical vapor deposition using an amide precursor, Hf[N(C2H5)2]4, and O2 as source materials. The effect of deposition temperature on the deposition characteristics and electrical properties of the resultant films were investigated. Reaction-limited deposition of hafnium oxide films occurred at deposition temperatures under 380 °C. Concentration of residues, such as carbon, nitrogen, and hydrogen, monotonously decreased with increasing deposition temperature, with nitrogen being the most thermally susceptible. However, surface roughness reached a minimum value at 400 °C. Amorphous films were obtained for deposition temperatures up to 450 °C, but obviously became crystallized at 500 °C. Accumulation capacitance increased with increasing deposition temperature but saturated above 400 °C. Moreover, postdeposition annealing at 800 °C caused no obvious degradation in the electrical properties of the film deposited at 400 °C.

scholarly journals Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition

2021 ◽  
Vol 7 (16) ◽  
pp. eabf7358
Author(s):  
Meng Peng ◽  
Runzhang Xie ◽  
Zhen Wang ◽  
Peng Wang ◽  
Fang Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Spectral Response ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Infrared Detection ◽  
Infrared Photodetectors ◽  
Bandgap Semiconductors ◽  
Low Dimensional

Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition. The low-dimensional Te shows high hole mobility and broadband detection. The blackbody-sensitive infrared detection of Te devices was demonstrated. A high responsivity of 6650 A W−1 (at 1550-nm laser) and the blackbody responsivity of 5.19 A W−1 were achieved. High-resolution imaging based on Te photodetectors was successfully obtained. All the results suggest that the chemical vapor deposition–grown low-dimensional Te is one of the competitive candidates for sensitive focal-plane-array infrared photodetectors at room temperature.

NaCl-Type Oxide Films Prepared by Plasma-Enhanced Metalorganic Chemical Vapor Deposition

1993 ◽  
Vol 32 (Part 2, No. 10A) ◽  
pp. L1448-L1450 ◽  
Author(s):  
Eiji Fujii ◽  
Atsushi Tomozawa ◽  
Satoru Fujii ◽  
Hideo Torii ◽  
Masumi Hattori ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Metalorganic Chemical

Room temperature observation of the correlation between atomic and electronic structure of graphene on Cu(110)

RSC Advances ◽  
2016 ◽  
Vol 6 (100) ◽  
pp. 98001-98009 ◽  
Author(s):  
Thais Chagas ◽  
Thiago H. R. Cunha ◽  
Matheus J. S. Matos ◽  
Diogo D. dos Reis ◽  
Karolline A. S. Araujo ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Chemical Vapor Deposition ◽  
Scanning Tunneling Microscopy ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Temperature Observation ◽  
Atomic And Electronic Structure

We have used atomically-resolved scanning tunneling microscopy and spectroscopy to study the interplay between the atomic and electronic structure of graphene formed on copper via chemical vapor deposition.

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