Pressure dependence of the negative bias voltage for stabilization of cubic boron nitride thin films deposited by sputtering

1998 ◽  
Vol 72 (20) ◽  
pp. 2523-2525 ◽  
Author(s):  
Wilfredo Otaño-Rivera ◽  
Lawrence J. Pilione ◽  
Russell Messier
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Bias Voltage ◽  
Pressure Dependence ◽  
Cubic Boron Nitride ◽  
Negative Bias ◽  
Negative Bias Voltage

Zirconia Coatings Deposited by Inductively Coupled Plasma Assisted CVD

1998 ◽  
Vol 555 ◽  
Author(s):  
P. Colpo ◽  
G. Ceccone ◽  
B. Leclercq ◽  
P. Salvatore ◽  
F. Rossi
Keyword(s):  
Thin Films ◽  
Bias Voltage ◽  
Inductively Coupled Plasma ◽  
Gas Mixture ◽  
Negative Bias ◽  
Negative Bias Voltage ◽  
Inductively Coupled ◽  
Deposition Parameters ◽  
Coating Characteristics ◽  
Dc Bias

AbstractThin films of zirconia have been deposited by an Inductively Coupled Plasma Assisted CVD (ICP-PACVD) reactor from tetra (tert-butoxy)-zircon precursor diluted in Ar and O2 gas mixture. An independent RF generator is used to control carefully the substrate negative bias voltage during the deposition. Zirconia thin films, with thickness up to 10 microns were deposited on Si (100) polished wafers under different plasma conditions. Correlation between deposition parameters, and microstructure has been established showing that the ion bombardment has a large influence on the coating characteristics. In particular, the possibility of tailoring mechanical properties of the films by controlling the applied DC bias voltage is discussed.

The effect of applied substrate negative bias voltage on the structure and properties of Al-containing a-C:H thin films

2008 ◽  
Vol 202 (12) ◽  
pp. 2684-2689 ◽  
Author(s):  
Guangan Zhang ◽  
Pengxun Yan ◽  
Peng Wang ◽  
Youming Chen ◽  
Junying Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Bias Voltage ◽  
Negative Bias ◽  
Structure And Properties ◽  
Negative Bias Voltage

Stresses in Amorphous Gd-Fe Alloy Thin Films Deposited by Magnetron Sputtering

1990 ◽  
Vol 188 ◽  
Author(s):  
Zhi-Feng Zhou ◽  
Qi-Gang Zhou ◽  
Yu-Dian Fan
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Compressive Stress ◽  
Bias Voltage ◽  
Negative Bias ◽  
Negative Bias Voltage ◽  
Working Pressure ◽  
Planar Magnetron ◽  
Very High ◽  
High Working Pressure

ABSTRACTAmorphous Gd-Fe alloy thin films were made by D.C. planar magnetron sputtering under various deposition conditions (e.g., film thickness, composition, working pressure of Ar, negative bias voltage and deposition rate). The stress, the film composition and the content of entrapped Ar in the films were measured respectively. The experimental results showed that in this case the working pressure of Ar and the negative bias voltage did not change the composition of the films, and the stresses were all compressive except for the films deposited in a very high working pressure of Ar. The origin of the compressive stress can be attributed to the atomic peening effect produced by fast neutral working gas atoms rebounded from the sputtering target. The magnitude of the compressive stress depends not only on the amount of Ar atoms incorporated in the films but also on the film microstructure such as the packing density.

scholarly journals Optical band gap of cubic boron nitride thin films deposited by sputtering

2008 ◽  
Vol 57 (10) ◽  
pp. 6631
Author(s):  
Deng Jin-Xiang ◽  
Wang Xu-Yang ◽  
Yao Qian ◽  
Zhou Tao ◽  
Zhang Xiao-Kang
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Band Gap ◽  
Optical Band Gap ◽  
Cubic Boron Nitride

scholarly journals THE GROWTH CHARACTER AND ADHESION OF CUBIC BORON NITRIDE THIN FILMS

1998 ◽  
Vol 47 (5) ◽  
pp. 871
Author(s):  
MA XI-YING ◽  
YUE JIN-SHUN ◽  
HE DE-YAN ◽  
CHEN GUANG-HUA
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Growth Character

Phase control of cubic boron nitride thin films

1992 ◽  
Vol 72 (2) ◽  
pp. 504-513 ◽  
Author(s):  
Daniel J. Kester ◽  
Russell Messier
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Phase Control

Corrosion and Tribological Behaviour of BN Thin Films Deposited Using Magnetron Sputtering

2021 ◽  
Vol 9 (2) ◽  
pp. 24-39
Author(s):  
Mukhtiar Singh ◽  
Hitesh Vasudev ◽  
Ravinder Kumar
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Magnetron Sputtering ◽  
Hexagonal Boron Nitride ◽  
Cubic Boron Nitride ◽  
Base Material ◽  
Electrochemical Corrosion ◽  
Mechanical Analysis ◽  
Tribological Behaviour ◽  
Structural Morphology

Boron nitride coatings were synthesised on 316L stainless steel substrates through the radio frequency magnetron sputtering from a target made of hexagonal boron nitride. The process of deposition was conducted in three separate N2 and Ar system mixing regimes. Scanning electron microscopy (SEM) and x-ray diffraction (XRD) techniques investigated the microstructure morphology and composition of the BN films at varying ratio of N2 and Ar plasma. This research aimed to examine the effects of changing the N2 gas ratio on the structure and structural morphology of c-BN coatings. Using QAr / QN2-5/1 ratios, an increased consistency of the microstructure and further c-BN step formation suggest a fundamental technique for producing superior quality cubic boron nitride films. The electrochemical corrosion test and mechanical analysis was performed to study corrosion and tribological behaviour of the BN coating, and the results showed more improvement in corrosion and tribilogical behaviour in case of BN2 regime. The BN2 regime showed a maximum corrosion resistance of around 1.114 mpy (miles per year). The young's modulus of 346Gpa in magnitude in case of BN2 thin film was found to be higher as compared to base material and other two thin films.

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