Zirconia Coatings Deposited by Inductively Coupled Plasma Assisted CVD

AbstractThin films of zirconia have been deposited by an Inductively Coupled Plasma Assisted CVD (ICP-PACVD) reactor from tetra (tert-butoxy)-zircon precursor diluted in Ar and O2 gas mixture. An independent RF generator is used to control carefully the substrate negative bias voltage during the deposition. Zirconia thin films, with thickness up to 10 microns were deposited on Si (100) polished wafers under different plasma conditions. Correlation between deposition parameters, and microstructure has been established showing that the ion bombardment has a large influence on the coating characteristics. In particular, the possibility of tailoring mechanical properties of the films by controlling the applied DC bias voltage is discussed.

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Dependence of Substrate DC Bias Voltage on Structural Properties of Nickel Thin Films Using Magnetron Sputtering with Multipolar Magnetic Plasma Confinement Assisted by Inductively Coupled Plasma

Shinku ◽

10.3131/jvsj.49.156 ◽

2006 ◽

Vol 49 (3) ◽

pp. 156-158 ◽

Cited By ~ 3

Author(s):

Kazuaki TAKESAKO ◽

Yuta OKAYAMA ◽

Keishi KAWABATA

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Structural Properties ◽

Bias Voltage ◽

Inductively Coupled Plasma ◽

Plasma Confinement ◽

Inductively Coupled ◽

Nickel Thin Films ◽

Dc Bias ◽

Magnetic Plasma

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Enhanced thermal stability and mechanical properties of nitrogen deficient titanium aluminum nitride (Ti0.54Al0.46Ny) thin films by tuning the applied negative bias voltage

Journal of Applied Physics ◽

10.1063/1.4986350 ◽

2017 ◽

Vol 122 (6) ◽

pp. 065301 ◽

Cited By ~ 8

Author(s):

K. M. Calamba ◽

I. C. Schramm ◽

M. P. Johansson Jõesaar ◽

J. Ghanbaja ◽

J. F. Pierson ◽

...

Keyword(s):

Thin Films ◽

Mechanical Properties ◽

Thermal Stability ◽

Aluminum Nitride ◽

Bias Voltage ◽

Negative Bias ◽

Negative Bias Voltage ◽

Titanium Aluminum ◽

Titanium Aluminum Nitride

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The effect of applied substrate negative bias voltage on the structure and properties of Al-containing a-C:H thin films

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2007.09.051 ◽

2008 ◽

Vol 202 (12) ◽

pp. 2684-2689 ◽

Cited By ~ 31

Author(s):

Guangan Zhang ◽

Pengxun Yan ◽

Peng Wang ◽

Youming Chen ◽

Junying Zhang ◽

...

Keyword(s):

Thin Films ◽

Bias Voltage ◽

Negative Bias ◽

Structure And Properties ◽

Negative Bias Voltage

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Effect of DC Bias Voltage on the Characteristics of Low Temperature Silicon–Nitride Films Deposited by Internal Linear Antenna Inductively Coupled Plasma Source

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.056505 ◽

2010 ◽

Vol 49 (5) ◽

pp. 056505 ◽

Cited By ~ 1

Author(s):

Gwang Ho Gweon ◽

Jong Hyeuk Lim ◽

Seung Pyo Hong ◽

Geun Young Yeom

Keyword(s):

Silicon Nitride ◽

Low Temperature ◽

Bias Voltage ◽

Inductively Coupled Plasma ◽

Plasma Source ◽

Linear Antenna ◽

Inductively Coupled ◽

Silicon Nitride Films ◽

Dc Bias

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Etch Characteristics of Copper Thin Films in Inductively Coupled Plasma of Piperidine/Ethanol/Ar Gas Mixture

ECS Journal of Solid State Science and Technology ◽

10.1149/2162-8777/abffb4 ◽

2021 ◽

Vol 10 (5) ◽

pp. 054006

Author(s):

Eun Taek Lim ◽

Ji Soo Lee ◽

Sung Yong Park ◽

Chee Won Chung

Keyword(s):

Thin Films ◽

Inductively Coupled Plasma ◽

Gas Mixture ◽

Inductively Coupled ◽

Ar Gas

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Etching Mechanism of ZnO Thin Films in Inductively Coupled Plasma

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.124-126.65 ◽

2007 ◽

Vol 124-126 ◽

pp. 65-68

Author(s):

Chan Min Kang ◽

Jong Sik Kim ◽

Gwan Ha Kim ◽

Chang Il Kim

Keyword(s):

Thin Films ◽

Photoelectron Spectroscopy ◽

Inductively Coupled Plasma ◽

Etch Rate ◽

Zno Thin Films ◽

X Ray ◽

Inductively Coupled ◽

Mixing Ratios ◽

Dc Bias ◽

By Products

The etching properties of the ZnO thin films in the inductively coupled Cl2/Ar plasma (ICP) were studied in the terms of etch rate and selectivity as functions of gas mixing ratio, ICP coil power and dc bias voltage. The maximum etch rate of 129.3 nm/min was obtained for the mixture of 20% Ar/80% Cl2. The X-ray photoelectron spectroscopy (XPS) analyses of the ZnO surfaces etched at various Cl2/(Cl2+Ar) mixing ratios revealed the formation of the ZnClx and ClOx reaction by-products as a result of the increased etch rate with increasing Cl2 addition, compared with 100% Ar+ sputter etching. From the analysis of these data, it was proposed that the maximum on the etch rate may be explained by the concurrence of chemical and physical pathways in the ion assisted chemical reaction.

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Stresses in Amorphous Gd-Fe Alloy Thin Films Deposited by Magnetron Sputtering

MRS Proceedings ◽

10.1557/proc-188-91 ◽

1990 ◽

Vol 188 ◽

Author(s):

Zhi-Feng Zhou ◽

Qi-Gang Zhou ◽

Yu-Dian Fan

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Compressive Stress ◽

Bias Voltage ◽

Negative Bias ◽

Negative Bias Voltage ◽

Working Pressure ◽

Planar Magnetron ◽

Very High ◽

High Working Pressure

ABSTRACTAmorphous Gd-Fe alloy thin films were made by D.C. planar magnetron sputtering under various deposition conditions (e.g., film thickness, composition, working pressure of Ar, negative bias voltage and deposition rate). The stress, the film composition and the content of entrapped Ar in the films were measured respectively. The experimental results showed that in this case the working pressure of Ar and the negative bias voltage did not change the composition of the films, and the stresses were all compressive except for the films deposited in a very high working pressure of Ar. The origin of the compressive stress can be attributed to the atomic peening effect produced by fast neutral working gas atoms rebounded from the sputtering target. The magnitude of the compressive stress depends not only on the amount of Ar atoms incorporated in the films but also on the film microstructure such as the packing density.

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Rapid synthesis of nc-Si/a-SiNx:H QD thin films by plasma processing for their cost effective applications in photonic and photovoltaic devices

RSC Advances ◽

10.1039/c5ra10741e ◽

2015 ◽

Vol 5 (78) ◽

pp. 63572-63579 ◽

Cited By ~ 4

Author(s):

Debajyoti Das ◽

Basudeb Sain

Keyword(s):

Thin Films ◽

Inductively Coupled Plasma ◽

Plasma Processing ◽

Cost Effective ◽

Single Step ◽

High Density ◽

Gas Mixture ◽

Photovoltaic Devices ◽

Rapid Synthesis ◽

Inductively Coupled

A rapid and single step synthesis of nc-Si/a-SiNx:H QD thin films has been made possible from a (SiH4 + NH3) gas mixture, with the advent of high density low pressure planar inductively coupled plasma processing.

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