Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells

1998 ◽  
Vol 73 (24) ◽  
pp. 3571-3573 ◽  
Author(s):  
T. Wang ◽  
D. Nakagawa ◽  
J. Wang ◽  
T. Sugahara ◽  
S. Sakai
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Single Quantum ◽  
Single Quantum Well

GaSb/InGaAsSb/GaSb SINGLE AND MULTIPLE QUANTUM WELLS: OPTICAL PROPERTIES ENGINEERING AND APPLICATION

2007 ◽  
Vol 06 (05) ◽  
pp. 315-318 ◽  
Author(s):  
A. A. KOVALYOV ◽  
O. P. PCHELYAKOV ◽  
V. V. PREOBRAZHENSKII ◽  
M. M. PUTYATO ◽  
N. N. RUBTSOVA ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Quantum Confinement ◽  
Multiple Quantum Wells ◽  
Saturable Absorption ◽  
Multiple Quantum ◽  
Transmission Spectra ◽  
Single Quantum Well ◽  
Mbe Growth ◽  
High Reflection

MBE growth of GaSb / InGaAsSb / GaSb heterostructures of high crystal quality is performed under continual RHEED control. Transmission spectra of the films forming multiple quantum wells in λ ≈ 2–3 μm region confirm possibility to control optical properties of the structures through quantum confinement and through the content of semiconductor elements. New design of saturable absorption semiconductor mirror (SESAM) for Cr 2+: ZnSe laser is proposed and manufactured on the base of the single quantum well GaSb / InGaAsSb / GaSb placed between dielectric antireflection and broadband high reflection coatings.

THE QUASI-CONFINED OPTICAL PHONONS IN WURTZITE SYMMETRY MULTIPLE QUANTUM WELLS

2006 ◽  
Vol 20 (22) ◽  
pp. 1367-1381 ◽  
Author(s):  
WEN-DENG HUANG ◽  
SHU-YI WEI ◽  
YA-JIE REN
Keyword(s):  
Quantum Wells ◽  
Equation Of Motion ◽  
Uniaxial Crystal ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Single Quantum Well ◽  
Crystal Model ◽  
Dielectric Continuum ◽  
Dielectric Continuum Model ◽  
Confined Phonons

Within the framework of the dielectric-continuum model and Loudon's uniaxial crystal model, the equation of motion for p-polarization field in wurtzite multiplayer symmetry heterostructures are solved for the quasi-confined phonon (QC) modes. The polarization eigenvector, the dispersion relation, and the electron-QC interaction Fröhlich-like Hamiltonian are derived by using the transfer-matrix method. The analytical theory and formulas can be directly applied to the single quantum well (QW) and multiple quantum wells (QWs), and superlattices (SLs). The dispersion relations and the electron-QC coupling strength are investigated for a wurtzite GaN/Al 0.15 Ga 0.85 N single QW. The results show that there are infinite branches of the dispersion curve with definite symmetry with respect to the center of the QW structure. The confinement of the quasi-confined phonons in the QW leads to a quantization of qz,j characterized by an integer m that defines the order of corresponding quasi-confined modes. The QC modes are more dispersive for decreasing m. The QC modes display an interface behavior in the barrier and a confined behavior in the well. When q⊥ is small, the symmetric modes have more contribution to electron-QC interaction than the antisymmetric modes.

scholarly journals Effects of Variation of Quantum Well Numbers on Gain Characteristics of Type-I InGaAsP/InP Nano-heterostructure

2017 ◽  
Vol 6 (3) ◽  
pp. 301-310
Author(s):  
S. G. Anjum ◽  
Sandhya K. ◽  
A. B. Khan ◽  
A. M. Khan ◽  
M. J. Siddiqui ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Carrier Density ◽  
Multiple Quantum ◽  
Type I ◽  
Long Distance ◽  
Single Quantum Well ◽  
Lasing Wavelength ◽  
Material Gain ◽  
Distance Communication

This paper reports the effects of variation of number of quantum wells in material gain characteristics and lasing wavelength of step index separately confined type-I InGaAsP/InP lasing nano-heterostructure for different carrier concentrations at room temperature in TE (Transverse Electric) mode of polarization. Peak material gain is found to be highest when the number of quantum well is one in the structure. However, for the case of 3QWs, 5QWs and 7QWs, it is almost same at a particular carrier density. Lasing wavelength at peak material gain considerably increases as the number of quantum well layers vary from single quantum well layer to three quantum well layers in the active region and after that it will remain almost same by any further increase in number of quantum wells for a particular carrier density. Furthermore, negative gain condition in the material gain spectra exists in the case of multiple quantum wells only at carrier concentration of 2×1018/cm3. The results suggest that the proposed nano-heterostructure is highly suitable as a light source in fiber optic links for long distance communication.

Stimulated Emission from Single- and Multiple-Quantum-Well GaN-AlGaN Separate-Confinement Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
D. A. S. Loeber ◽  
N. G. Anderson ◽  
J. M. Redwing ◽  
J. S. Flynn ◽  
G. M. Smith ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optical Pumping ◽  
Multiple Quantum Well ◽  
Emission Spectra ◽  
Stimulated Emission ◽  
Emission Characteristics ◽  
Multiple Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well

ABSTRACTStimulated emission characteristics are examined for GaN-AlGaN separate-confinement quantum-well heterostructures grown by MOVPE on 4H-SiC substrates. We specifically focus on comparison of structures with different quantum well active region designs. Polarization resolved edge emission spectra and stimulated emission thresholds are obtained under optical pumping using a stripe excitation geometry. Stimulated emission characteristics are studied as a function of the number of quantum wells in the structure, and are correlated with surface photoluminescence properties. We find reduced stimulated emission thresholds and increased surface photoluminescence intensities as the number of quantum wells is reduced, with the best results obtained for a single-quantum-well structure. These results should provide useful information for the design of GaN-based quantum well lasers.

Low Temperature Growth of Gaas Quantum Well Lasers by Modulated Beam Epitaxy

1991 ◽  
Vol 228 ◽  
Author(s):  
S. Xin ◽  
K. F. Longenbach ◽  
C. Schwartz ◽  
Y. Jiang ◽  
W. I. Wang
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Substrate Temperature ◽  
Quantum Wells ◽  
High Growth ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Temperature Growth ◽  
Low Temperature Growth

ABSTRACTGaAs single quantum well lasers have been successfully grown at low temperatures by a modulated beam epitaxy process in which the Al/Ga flux is held constant while the As flux is periodically shut off to produce a metal-rich surface. Devices grown at a substrate temperature of 500 °C exhibit threshold current densities below 1 kA/cm2. This value is lower than normally grown low temperature lasers and is the lowest achieved by any low substrate temperature growth technique. In addition, low temperature (10 K) photoluminescence of single quantum wells grown with this technique exhibit full-width half maximum values, comparable to that attainable by higher temperature growth techniques. The improved quality of these low temperature grown quantum structures is attributed to both a smoothing of the growth front and a reduction of excess As during the modulated beam epitaxy process. The high growth rates and less frequent shutter operation of this technique make it a more practical than migration enhanced epitaxy or atomic layer epitaxy for low temperature growth.

GaAs–AlGaAs multiple-quantum-well lasers for monolithic integration with optical modulators

1991 ◽  
Vol 69 (3-4) ◽  
pp. 491-496 ◽  
Author(s):  
F. Chatenoud ◽  
K. M. Dzurko ◽  
M. Dion ◽  
D. Moss ◽  
R. Barber ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Cavity Length ◽  
Multiple Quantum Well ◽  
Monolithic Integration ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Optical Modulators ◽  
Single Quantum Well ◽  
Quantum Well Structures

Calculations of multiple-quantum-well laser threshold current show that a common minimum current value exists for each number of wells, at an appropriate cavity length. This optimum cavity length decreases rapidly with increasing number of wells, for instance from about 300 to 110 μm for one to three wells. Granded-index separate-confinement heterostructure (GRINSCH) lasers with 1–10 quantum wells, grown by molecular beam epitaxy, show consistently low threshold currents that agree well with theoretical predictions. Lasing is achieved at 160 A cm−2 and 4.6 mA for broad-area and ridge waveguide single-quantum-well devices, respectively. The field-dependent electroabsorption of these devices when operating as wave-guide modulators indicates good modulation properties for one and three quantum-well structures, with on:off ratios above 55 at lasing wavelength. The behavior becomes more complex with increasing number of wells. This systematic study of discrete multiple-quantum-well lasers and modulators demonstrates that GRINSCH structures with 1–3 wells are the most suitable for monolithic integration. Design rules for the laser cavity are also presented for numbers of wells ranging from 1 to 10.

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