Analysis of the sharpness of interfaces in short-period GaN/AlN superlattices using Raman spectroscopy data

The results of joint theoretical and experimental studies aimed at revealing features in the Raman spectra, which can be used for evaluation of the interface quality between GaN and AlN layers in short-period GaN/AlN superlattices (SLs) are presented. The Raman spectra for SLs with sharp interface and with different degree of interface diffusion are simulated by ab initio calculations and within the framework of random-element isodisplacement model, respectively. The comparison of the results of theoretical calculations and experimental data obtained on PA MBE and MOVPE grown SLs, leads to conclusion that the spectral region of the A1(LO) confined phonons is very sensitive to the degree of interface sharpness. As a result of comprehensive studies, the correlations between the parameters of the A1(LO) confined phonons and the structure of SLs are obtained. The results of the complex studies can be used to optimize the parameters of the growth process in order to form structurally perfect short-period GaN/AlN SLs.

The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices

We present an extensive theoretical and experimental study to identify the effect on the Raman spectrum due to interface interdiffusion between GaN and AlN layers in short-period GaN/AlN superlattices (SLs). The Raman spectra for SLs with sharp interfaces and with different degree of interface diffusion are simulated by ab initio calculations and within the framework of the random-element isodisplacement model. The comparison of the results of theoretical calculations and experimental data obtained on PA MBE and MOVPE grown SLs, showed that the bands related to A1(LO) confined phonons are very sensitive to the degree of interface diffusion. As a result, a correlation between the Raman spectra in the range of A1(LO) confined phonons and the interface quality in SLs is obtained. This opens up new possibilities for the analysis of the structural characteristics of short-period GaN/AlN SLs using Raman spectroscopy.

Effects of Surface Stress on the Phonon Properties in GaN Nanofilms

This work investigates the phonon properties such as phonon dispersion relation, average group velocity, and phonon density of state (DOS) theoretically in GaN nanofilm under various surface stress fields. By taking into account of the surface energy effects, the elasticity theory is presented to describe the confined phonons of nanofilms with different surface stresses. The calculation results show that the influence of surface stress on the phonon properties depends on the thickness of nanofilm. The negative surface stress leads to a higher average group velocity and corresponding lower phonon DOS. The positive surface stress has the opposite effect. The significant modification of thermal properties, e.g., phonon thermal conductivity, in GaN nanofilms is mostly stemmed from the change of phonon average group velocity and DOS by surface stress. These results suggest that the thermal or electrical properties in GaN nanofilms could be enhanced or reduced by tuning the surface stress acting on the films.