The grain growth blocking effect of polycrystalline silicon film by thin native silicon oxide barrier during the excimer laser recrystallization

1999 ◽  
Vol 75 (4) ◽  
pp. 460-462 ◽  
Author(s):  
Kee-Chan Park ◽  
Jae-Hong Jeon ◽  
Cheol-Min Park ◽  
Min-Cheol Lee ◽  
Min-Koo Han ◽  
...  
Keyword(s):  
Grain Growth ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Silicon Oxide ◽  
Silicon Film ◽  
Blocking Effect ◽  
Laser Recrystallization ◽  
Oxide Barrier ◽  
Polycrystalline Silicon Film

Laser induced implanted oxide (Ll2Ox) and polycrystalline silicon film simultaneously fabricated by excimer laser irradiation

1997 ◽  
Vol 70 (3) ◽  
pp. 372-374
Author(s):  
Cheol-Min Park ◽  
Byung-Hyuk Min ◽  
Juhn-Suk Yoo ◽  
Jae-Hong Jun ◽  
Hong-Seok Choi ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Excimer Laser Irradiation ◽  
Polycrystalline Silicon Film

2-Dimensional Controlled Large Lateral Grain Growth on the Floating Amorphous Silicon Film by Excimer Laser Recrystallization

2003 ◽  
Vol 762 ◽  
Author(s):  
In-Hyuk Song ◽  
Su-Hyuk Kang ◽  
Woo-Jin Nam ◽  
Min-Koo Han
Keyword(s):  
Grain Boundary ◽  
Grain Growth ◽  
Excimer Laser ◽  
Thermal Gradient ◽  
Laser Annealing ◽  
Silicon Film ◽  
Excimer Laser Annealing ◽  
Active Structure ◽  
Current Path ◽  
Laser Recrystallization

AbstractWe have successfully obtained large lateral grains with well-controlled grain boundary. The proposed excimer laser annealing (ELA) method produces 2-dimensionally controlled grain growth because the temperature gradient is induced in two directions. Along the channel direction, the floating active structure produces large thermal gradient due to very low thermal conductivity of the air-gap. Along the perpendicular direction to the channel, the surface tension effect also produces thermal gradient. The proposed ELA method can control the grain boundary perpendicular and parallel to current path with only one laser irradiation.

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

Pulsed Laser-Induced Amorphization of Polycrystalline Silicon Film

1990 ◽  
Vol 29 (Part 2, No. 4) ◽  
pp. L548-L551 ◽  
Author(s):  
Toshiyuki Sameshima ◽  
Masaki Hara ◽  
Setsuo Usui
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Pulsed Laser ◽  
Polycrystalline Silicon Film

Initial stage of semiinsulating polycrystalline silicon film growth

2008 ◽  
Vol 37 (6) ◽  
pp. 349-355
Author(s):  
A. S. Turtsevich ◽  
O. Yu. Nalivaiko ◽  
V. A. Solodukha ◽  
V. V. Glukhmanchuk ◽  
N. G. Tsirkunova ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Film Growth ◽  
Silicon Film ◽  
Initial Stage ◽  
Polycrystalline Silicon Film

A New Double Laser Recrystallization Technique to Induce Ultra-Large Poly-Si Grains

2001 ◽  
Vol 685 ◽  
Author(s):  
Minghong Lee ◽  
Seungjae Moon ◽  
Mutsuko Hatano ◽  
Costas P. Grigoropoulos
Keyword(s):  
Grain Growth ◽  
Excimer Laser ◽  
Laser Fluence ◽  
Laser Power ◽  
Laser Flash ◽  
Process Window ◽  
Nanosecond Laser ◽  
Solidification Velocity ◽  
Laser Recrystallization ◽  
Nucleation Sites

AbstractA new double laser recrystallization technique that can produce lateral grains of tens of micrometers is presented. A nanosecond laser (excimer or Nd:YLF laser) and a pulse modulated Ar+ laser are used in the experiment. The effect of different parameters on lateral grain growth is investigated. These parameters include the time delay between the two lasers, the excimer laser fluence, the Ar+ laser power and the pulse duration. This process has wide process window and is insensitive to both the excimer laser fluence and the Ar+ laser power fluctuations. Preheating and melting of the a-Si film with the Ar+ laser before firing the excimer laser is found to be necessary for inducting lateral grain growth. The transient excimer laser irradiation is believed to generate nucleation sites for initiating the subsequent lateral grain growth. The solidification dynamics of the process is probed by high spatial and temporal resolution laser flash photography. A lateral solidification velocity of about 10 m/s is observed.

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