Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectrics for highly reliable p-metal–oxide–semiconductor field-effect transistors
2000 ◽
Vol 77
(18)
◽
pp. 2855-2857
◽
Anri Nakajima
◽
Takashi Yoshimoto
◽
Toshiro Kidera
◽
Katsunori Obata
◽
Shin Yokoyama
◽
...
2001 ◽
Vol 19
(4)
◽
pp. 1138
◽
Anri Nakajima
◽
Takashi Yoshimoto
◽
Toshirou Kidera
◽
Katsunori Obata
◽
Shin Yokoyama
◽
...
2004 ◽
Vol 33
(8)
◽
pp. 912-915
◽
P. D. Ye
◽
G. D. Wilk
◽
B. Yang
◽
J. Kwo
◽
H. -J. L. Gossmann
◽
...
2009 ◽
Vol 94
(21)
◽
pp. 212104
◽
M. Xu
◽
Y. Q. Wu
◽
O. Koybasi
◽
T. Shen
◽
P. D. Ye
2008 ◽
Vol 103
(8)
◽
pp. 084512
◽
Shiyang Zhu
◽
Anri Nakajima
2009 ◽
Vol 27
(4)
◽
pp. 2024
◽
Han Zhao
◽
Jung Hwan Yum
◽
Yen-Ting Chen
◽
Jack C. Lee
2010 ◽
Vol 96
(25)
◽
pp. 253502
◽
Yen-Ting Chen
◽
Han Zhao
◽
Yanzhen Wang
◽
Fei Xue
◽
Fei Zhou
◽
...
2009 ◽
Vol 48
(4)
◽
pp. 04C009
◽
Shuang-Yuan Chen
◽
Hung-Wen Chen
◽
Chuan-Hsi Liu
◽
Li-Wei Cheng
2010 ◽
Vol 54
(9)
◽
pp. 919-924
◽
T.D. Lin
◽
H.C. Chiu
◽
P. Chang
◽
Y.H. Chang
◽
Y.D. Wu
◽
...
2007 ◽
Vol 46
(1)
◽
pp. 7-13
◽
Shimpei Tsujikawa
◽
Katsuya Shiga
◽
Hiroshi Umeda
◽
Jiro Yugami
2008 ◽
Vol 92
(23)
◽
pp. 233508
◽
Han Zhao
◽
Davood Shahrjerdi
◽
Feng Zhu
◽
Manhong Zhang
◽
Hyoung-Sub Kim
◽
...