Vox/Eox-Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress
2007 ◽
Vol 46
(1)
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pp. 7-13
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2010 ◽
Vol 157
(6)
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pp. H633
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1999 ◽
Vol 38
(Part 1, No. 8)
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pp. 4696-4698
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2004 ◽
Vol 33
(8)
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pp. 912-915
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2010 ◽
Vol 54
(9)
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pp. 919-924
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