Suppressed shot noise in trap-assisted tunneling of metal–oxide–semiconductor capacitors

2000 ◽  
Vol 77 (18) ◽  
pp. 2876-2878 ◽  
Author(s):  
G. Iannaccone ◽  
F. Crupi ◽  
B. Neri ◽  
S. Lombardo
Keyword(s):  
Metal Oxide ◽  
Shot Noise ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling

Accurate Modeling Methodology of Laterally Diffused Metal-Oxide Semiconductor Leakage Current for Electro-Static Discharge Protection Circuit Design

2021 ◽  
Vol 21 (8) ◽  
pp. 4230-4234
Author(s):  
Jun Hyeok Kim ◽  
Su Min Lee ◽  
Chan Ho Park
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Measurement Data ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Modeling Methodology ◽  
Trap Assisted Tunneling ◽  
Protection Circuit ◽  
Current Characteristics ◽  
Static Discharge

A modeling method using juncap2 physical compact model with SRH (Shockley-Read-Hall), TAT (Trap-Assisted-Tunneling), BBT (Band-to-Band Tunneling) effects is presented for the leakage current in a laterally diffused metal-oxide semiconductor (LDMOS). The juncap2 model is successfully combined with BSIM4 model and it is validated with measurement data. The model accurately predicts the leakage current characteristics for the entire bias region and temperature.

ANOMALOUS LENGTH DEPENDENCE OF THE CONDUCTANCE OF A 2D CHANNEL NEAR THE THRESHOLD

1994 ◽  
Vol 08 (07) ◽  
pp. 445-454
Author(s):  
M. E. RAIKH ◽  
F. G. PIKUS
Keyword(s):  
Metal Oxide ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Channel Length ◽  
Metal Oxide Semiconductor ◽  
Potential Profile ◽  
Oxide Semiconductor ◽  
Assisted Tunneling ◽  
Channel Region

The modification of the potential profile in the channel of metal oxide semiconductor field effect transistors, caused by electrons in n+ contacts attracted to the surface by the gate voltage, is considered. Effective narrowing of the channel region, in which the transport is due to the phonon-assisted tunneling, could be responsible for the dramatic increase of the conductance with channel length in the strongly localized regime, as observed by Popović, Fowler, and Washburn.1

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