An add-on secondary electron energy spectrometer for scanning electron microscopes

2001 ◽  
Vol 72 (3) ◽  
pp. 1708 ◽  
Author(s):  
A. Khursheed ◽  
N. Karuppiah
Keyword(s):  
Electron Energy ◽  
Secondary Electron ◽  
Energy Spectrometer ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

scholarly journals Characterization of a Miniature Electron Energy Analyzer for Scanning Electron Microscopes

2017 ◽  
Vol 902 ◽  
pp. 012017 ◽  
Author(s):  
Ashish Suri ◽  
Andrew Pratt ◽  
Steve Tear ◽  
Christopher Walker ◽  
Mohamed El-Gomati
Keyword(s):  
Electron Energy ◽  
Energy Analyzer ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

scholarly journals Simulations and measurements in scanning electron microscopes at low electron energy

Scanning ◽  
2016 ◽  
Vol 38 (6) ◽  
pp. 802-818 ◽  
Author(s):  
Christopher G.H. Walker ◽  
Luděk Frank ◽  
Ilona Müllerová
Keyword(s):  
Electron Energy ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

scholarly journals Depth Information Available from the Backscattered Electron Signal

1995 ◽  
Vol 3 (6) ◽  
pp. 8-9
Author(s):  
V.N.E. Robinson
Keyword(s):  
Surface Topography ◽  
Atomic Number ◽  
Secondary Electron ◽  
Low Voltage ◽  
Depth Information ◽  
New Techniques ◽  
Backscattered Electron ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

Although the secondary electron (SE) signal is still the most commonly used signal in scanning electron microscopes (SEMs), the backscattered electron (BSE) signal is now in wide use. Imaging both atomic number and surface topography have been the major applications of BSE detectors, with some applications in channelling, magnetic contrast and similar specialized applications. Over the last few years, low voltage BSE imaging has been used for imaging surface features to a depth of a few nm. But the BSE signal contains much more information and new techniques are being developed to take advantage of its versatility.

The Characterization of Nano Materials in the FE-SEM

2000 ◽  
Vol 6 (S2) ◽  
pp. 744-745
Author(s):  
Raynald Gauvin ◽  
Paula Horny
Keyword(s):  
Secondary Electron ◽  
Incident Electron Energy ◽  
Objective Lens ◽  
Type I ◽  
Nano Materials ◽  
Backscattered Electrons ◽  
Probe Diameter ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

The observation of nano materials or nano phases is generally performed using Transmission Electron Microscopy (TEM) because conventional Scanning Electron Microscopes (SEM) do not have the resolution to image such small phases. Since the last decade, a new generation of microscopes is available on the market. These are the Field Emission Scanning Electron Microscope (FE-SEM) with a virtual secondary electron detector. The FE-SEM have a higher brightness allowing probe diameter smaller than 2.5 nm with incident electron energy, E0, below 5 keV. Furthermore, what gives FE-SEM outstanding resolution is the virtual secondary electron (SE) detector. The virtual SE detector is located above the objective lens and it is also named a through-the-lens (TTL) detector. Therefore, the SE images are mostly made up of all SE of type I and II, because those of type III, which are generated by the backscattered electrons in the chamber, are not collected.

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