scholarly journals Anomalous low-voltage tunneling current characteristics of ultrathin gate oxide (∼2 nm) after high-field stress

2001 ◽  
Vol 89 (10) ◽  
pp. 5497-5501 ◽  
Author(s):  
Chia-Hong Huang ◽  
Jenn-Gwo Hwu
Keyword(s):  
High Field ◽  
Low Voltage ◽  
Tunneling Current ◽  
Gate Oxide ◽  
Field Stress ◽  
Current Characteristics

The Effect of Roughness Features on Mos Surface Electric Field and Fowler-Nordheim Tunneling Behavior

1997 ◽  
Vol 473 ◽  
Author(s):  
Heng-Chih Lin ◽  
Edwin C. Kan ◽  
Toshiaki Yamanaka ◽  
Simon J. Fang ◽  
Kwame N. Eason ◽  
...  
Keyword(s):  
Electric Field ◽  
Three Dimensional ◽  
Tunneling Current ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Interface Roughness ◽  
Normal Electric Field ◽  
Surface Electric Field ◽  
Tunneling Behavior ◽  
Nordheim Tunneling

ABSTRACTFor future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior. In this research, we used a simple two-spheres model and a three-dimensional Laplace solver to simulate the electric field and the tunneling current in the oxide region. Our results show that both quantities are strong functions of roughness spatial wavelength, associated amplitude, and oxide thickness. We found that RMS roughness itself cannot fully characterize surface roughness and that roughness has a larger effect for thicker oxide in terms of surface electric field and tunneling behavior.

Experimental and Simulation Results of Magnetic Modulation of Gate Oxide Tunneling Current in Nanoscaled MOS Transistors

2015 ◽  
Vol 36 (4) ◽  
pp. 387-389 ◽  
Author(s):  
Gabriela A. Rodriguez-Ruiz ◽  
Edmundo A. Gutierrez-Dominguez ◽  
Arturo Sarmiento-Reyes ◽  
Zlatan Stanojevic ◽  
Hans Kosina ◽  
...  
Keyword(s):  
Tunneling Current ◽  
Gate Oxide ◽  
Mos Transistors ◽  
Simulation Results ◽  
Gate Oxide Tunneling

Oxide wearout phenomena of ultrathin SiO2 film during high-field stress

1992 ◽  
Vol 28 (16) ◽  
pp. 1516 ◽  
Author(s):  
H. Fukuda ◽  
M. Yasuda ◽  
T. Iwabuchi
Keyword(s):  
High Field ◽  
Sio2 Film ◽  
Field Stress

scholarly journals Degradation under high-field stress and gate stress of AlGaN/GaN HEMTs

2009 ◽  
Vol 58 (1) ◽  
pp. 511
Author(s):  
Gu Wen-Ping ◽  
Hao Yue ◽  
Zhang Jin-Cheng ◽  
Wang Chong ◽  
Feng Qian ◽  
...  
Keyword(s):  
High Field ◽  
Field Stress ◽  
Gan Hemts

scholarly journals Local Thinning-Induced Oxide Nonuniformity Effect on the Tunneling Current of Ultrathin Gate Oxide

2002 ◽  
Vol 41 (Part 1, No. 1) ◽  
pp. 1-4 ◽  
Author(s):  
Chao-Chi Hong ◽  
Wei-Ren Chen ◽  
Jenn-Gwo Hwu
Keyword(s):  
Tunneling Current ◽  
Gate Oxide
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