Oxide wearout phenomena of ultrathin SiO2 film during high-field stress

Electronics Letters ◽

10.1049/el:19920963 ◽

1992 ◽

Vol 28 (16) ◽

pp. 1516 ◽

Author(s):

H. Fukuda ◽

M. Yasuda ◽

T. Iwabuchi

Keyword(s):

Sio2 Film ◽

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Degradation under high-field stress and gate stress of AlGaN/GaN HEMTs

Acta Physica Sinica ◽

10.7498/aps.58.511 ◽

2009 ◽

Vol 58 (1) ◽

pp. 511

Author(s):

Gu Wen-Ping ◽

Hao Yue ◽

Zhang Jin-Cheng ◽

Wang Chong ◽

Feng Qian ◽

...

Keyword(s):

Field Stress ◽

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Positive and negative charge creation in the SiO2 film of a MOS transistor by high electric field stress

Applied Physics A ◽

10.1007/bf01567647 ◽

1996 ◽

Vol 63 (2) ◽

pp. 179-182 ◽

Author(s):

I. Strzalkowski ◽

M. Kowalski

Keyword(s):

Electric Field ◽

Negative Charge ◽

Sio2 Film ◽

High Electric Field ◽

Mos Transistor ◽

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High field stress induced leakage current in 3.0-nm NO-grown gate dielectric films

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings ◽

10.1109/tencon.1995.496391 ◽

2002 ◽

Author(s):

Ze-Qiang Yao ◽

H.B. Harrison ◽

S. Dimitrijev ◽

Y.T. Yeow

Keyword(s):

Leakage Current ◽

Gate Dielectric ◽

Dielectric Films ◽

Field Stress ◽

Stress Induced Leakage Current

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Detection of traps induced and activated by high field stress in an N-channel VDMOSFET transistor using current deep level transient spectroscopy (CDLTS)

Microelectronic Engineering ◽

10.1016/j.mee.2011.08.008 ◽

2011 ◽

Vol 88 (11) ◽

pp. 3333-3337 ◽

Author(s):

N. Abboud ◽

Y. Cuminal ◽

A. Foucaran ◽

C. Salame

Keyword(s):

Deep Level Transient Spectroscopy ◽

Field Stress ◽

Transient Spectroscopy

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Anomalous low-voltage tunneling current characteristics of ultrathin gate oxide (∼2 nm) after high-field stress

Journal of Applied Physics ◽

10.1063/1.1364654 ◽

2001 ◽

Vol 89 (10) ◽

pp. 5497-5501 ◽

Author(s):

Chia-Hong Huang ◽

Jenn-Gwo Hwu

Keyword(s):

Low Voltage ◽

Tunneling Current ◽

Field Stress ◽

Current Characteristics

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A comparison of ionizing radiation and high field stress effects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1826213 ◽

2005 ◽

Vol 97 (1) ◽

pp. 014503 ◽

Author(s):

Mun-Soo Park ◽

Inmook Na ◽

Chu R. Wie

Keyword(s):

Ionizing Radiation ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Power ◽

Field Stress ◽

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Switching times variation of MOSFET devices with temperature and high-field stress

Microelectronics Journal ◽

10.1016/j.mejo.2007.12.028 ◽

2008 ◽

Vol 39 (5) ◽

pp. 828-831 ◽

Author(s):

R. Habchi ◽

C. Salame ◽

R. El Bitar ◽

P. Mialhe

Keyword(s):

Field Stress ◽

Switching Times

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The Dielectric Breakdown in Gate Oxides under High Field Stress

ECS Transactions ◽

10.1149/1.3122092 ◽

2019 ◽

Vol 19 (2) ◽

pp. 177-194 ◽

Author(s):

Salvatore A. Lombardo ◽

James H. Stathis ◽

Gennadi Bersuker

Keyword(s):

Dielectric Breakdown ◽

Gate Oxides ◽

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Comparison of high‐field stress effects in metal‐oxide‐semiconductor structures with aluminum and polycrystalline silicon gates using internal photoemission measurements

Journal of Applied Physics ◽

10.1063/1.335567 ◽

1985 ◽

Vol 58 (10) ◽

pp. 3936-3939 ◽

Author(s):

M. M. Heyns ◽

R. F. De Keersmaecker

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Internal Photoemission ◽

Field Stress ◽

Stress Effects ◽

Semiconductor Structures

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The negative bias temperature instability vs. high-field stress paradigm

2009 IEEE International Conference on IC Design and Technology ◽

10.1109/icicdt.2009.5166270 ◽

2009 ◽

Author(s):

J.P. Campbell ◽

K.P. Cheung ◽

J.S. Suehle ◽

A.S. Oates

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Field Stress ◽

Bias Temperature Instability

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