scholarly journals Growth mode transition from layer by layer to step flow during the growth of heteroepitaxial SrRuO3 on (001) SrTiO3

2001 ◽  
Vol 79 (10) ◽  
pp. 1447-1449 ◽  
Author(s):  
J. Choi ◽  
C. B. Eom ◽  
G. Rijnders ◽  
H. Rogalla ◽  
D. H. A. Blank
Keyword(s):  
Growth Mode ◽  
Layer By Layer ◽  
Mode Transition ◽  
Step Flow

Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates

2000 ◽  
Vol 640 ◽  
Author(s):  
S. Nishino ◽  
T. Nishiguchi ◽  
Y. Masuda ◽  
M. Sasaki ◽  
S. Ohshima
Keyword(s):  
Growth Temperature ◽  
Layer Growth ◽  
Growth Mode ◽  
Layer By Layer ◽  
Step Bunching ◽  
Step Flow ◽  
Cvd Growth ◽  
The Difference ◽  
Step Flow Growth ◽  
Sublimation Growth

ABSTRACTSublimation growth of 6H-SiC was performed on {1100} and {1120} substrates. The difference between the growth on {1100} plane and {1120} plane was observed. {1100} facet was almost flat and there were grooves oriented toward <1120> direction. The step bunching was observed on {1100} plane 5° off-axis. A lot of pits were introduced on {1120} plane of the crystal grown both on {1100} and {1120} substrates. Step flow growth toward <1120> direction created the pits on {1120} plane. It was important to grow crystal by layer by layer growth on {1120} plane. By changing the growth mode from step flow growth to layer by layer growth, pit on the {1120} plane may be reduced as same as CVD growth on {1120} plane. Growth temperature and C/Si ratio should be optimized to keep layer by layer growth.

STEP-FLOW GROWTH OF HETEROEPITAXIAL SrRuO3 THIN FILMS ON 0.04° SrTiO3 (001) VICINAL SUBSTRATES

2008 ◽  
Vol 01 (03) ◽  
pp. 253-257 ◽  
Author(s):  
T. J. ZHU ◽  
S. H. YANG ◽  
X. CHEN ◽  
X. X. LIU ◽  
X. B. ZHAO ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Mode ◽  
Layer By Layer ◽  
Mode Transition ◽  
Two Dimensional ◽  
Step Flow ◽  
Surface Mobility ◽  
Step Flow Growth ◽  
Miscut Angle ◽  
Mode A

We have grown epitaxial SRO thin films of thickness of about 50 nm on the STO (001) substrates with a small miscut angle of 0.04° by step-flow mode. A mode transition from two-dimensional mixed growth of layer-by-layer and step-flow growth to complete step-flow growth was observed, which is associated with the change in the surface mobility of adatoms and the rate of edge diffusion along the steps.

Either step-flow or layer-by-layer growth for AlN on SiC (0001) substrates

2003 ◽  
Vol 798 ◽  
Author(s):  
Jun Suda ◽  
Norio Onojima ◽  
Tsunenobu Kimoto ◽  
Hiroyuki Matsunami
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
High Growth ◽  
Layer Growth ◽  
Growth Mode ◽  
Crystalline Quality ◽  
Layer By Layer ◽  
Surface Pretreatment ◽  
Step Flow

ABSTRACTAlN was grown on 4H- or 6H-SiC (0001) on-axis substrates by plasma-assisted molecular beam epitaxy. By utilizing optimized SiC surface pretreatment, RHEED oscillations just after the growth of AlN were obtained with high reproducibility. This study focused on the growth kinetics of AlN and the correlation between kinetics and the crystalline quality of the grown layers. It was found that the growth mode changed from layer-by-layer to step-flow for high growth temperatures, while for lower temperatures the layer-by-layer growth mode persisted. The mechanism responsible for the change in growth mode is discussed. Symmetrical (0002) and asymmetrical (01–14) x-ray rocking curve measurements were carried out to evaluate the crystalline quality. For the (0002) peak, both high-temperature and low-temperature grown layers showed almost the same FWHM values. On the other hand, for the (01–14) peak, the FWHM of low-temperature grown AlN was much smaller (180 arcsec) than that of the high-temperature grown AlN (450 arcsec).

Layer-by-layer and step-flow growth mechanisms in GaAsP/GaP nanowire heterostructures

2006 ◽  
Vol 21 (11) ◽  
pp. 2801-2809 ◽  
Author(s):  
C. Chen ◽  
M.C. Plante ◽  
C. Fradin ◽  
R.R. LaPierre
Keyword(s):  
Molecular Beam ◽  
Stacking Faults ◽  
Layer Growth ◽  
Growth Mode ◽  
Layer By Layer ◽  
Step Flow ◽  
Gas Source ◽  
Constant Diameter ◽  
Step Flow Growth ◽  
Tapered Region

GaP–GaAsP segmented nanowires (NWs), with diameters ranging between 20 and 500 nm and lengths between 0.5 and 2 μm, were catalytically grown from Au particles on a GaAs (111)B substrate in a gas source molecular beam epitaxy system. The morphology of the NWs was either pencil-shaped with a tapered tip or rod-shaped with a constant diameter along the entire length. Stacking faults were observed for most NWs with diameters greater than 30 nm, but thinner ones tended to exhibit fewer defects. Moreover, stacking faults were more likely found in GaAsP than in GaP. The composition of the pencil NWs exhibited a core–shell structure at the interface region, and rod-shaped NWs resulted in planar and atomically abrupt heterointerfaces. A detailed growth mechanism is presented based on a layer-by-layer growth mode for the rod-shaped NWs and a step-flow growth mode for the tapered region of the pencil NWs.

Oblique-incidence Reflectivity Difference (OI-RD) and Leed Studies of Adsorption and Growth of Xe on Nb(110)

2003 ◽  
Vol 780 ◽  
Author(s):  
P. Thomas ◽  
E. Nabighian ◽  
M.C. Bartelt ◽  
C.Y. Fong ◽  
X.D. Zhu
Keyword(s):  
Transition Layer ◽  
Layer Growth ◽  
Flow Mode ◽  
Layer By Layer ◽  
Zeroth Order ◽  
Step Flow ◽  
Low Energy Electron Diffraction ◽  
Oriented Film ◽  
Low Energy Electron

AbstractWe studied adsorption, growth and desorption of Xe on Nb(110) using an in-situ obliqueincidence reflectivity difference (OI-RD) technique and low energy electron diffraction (LEED) from 32 K to 100 K. The results show that Xe grows a (111)-oriented film after a transition layer is formed on Nb(110). The transition layer consists of three layers. The first two layers are disordered with Xe-Xe separation significantly larger than the bulk value. The third monolayer forms a close packed (111) structure on top of the tensile-strained double layer and serves as a template for subsequent homoepitaxy. The adsorption of the first and the second layers are zeroth order with sticking coefficient close to one. Growth of the Xe(111) film on the transition layer proceeds in a step flow mode from 54K to 40K. At 40K, an incomplete layer-by-layer growth is observed while below 35K the growth proceeds in a multilayer mode.

Growth mode transition of InGaAs in OMVPE growth on GaP (001)

2000 ◽  
Vol 51-52 ◽  
pp. 35-42 ◽  
Author(s):  
H Moriya ◽  
Y Nonogaki ◽  
S Fuchi ◽  
A Koizumi ◽  
Y Fujiwara ◽  
...  
Keyword(s):  
Growth Mode ◽  
Mode Transition

Epitaxial Solid-Solution Films of Immiscible MgO and CaO

1994 ◽  
Vol 341 ◽  
Author(s):  
E. S. Hellman ◽  
E. H. Hartford
Keyword(s):  
Solid Solution ◽  
Molecular Beam Epitaxy ◽  
Lattice Constant ◽  
Solid Solutions ◽  
Molecular Beam ◽  
Building Blocks ◽  
Layer Growth ◽  
Growth Mode ◽  
Miscibility Gap ◽  
Layer By Layer

AbstractMetastable solid-solutions in the MgO-CaO system grow readily on MgO at 300°C by molecular beam epitaxy. We observe RHEED oscillations indicating a layer-by-layer growth mode; in-plane orientation can be described by the Matthews theory of island rotations. Although some films start to unmix at 500°C, others have been observed to be stable up to 900°C. The Mgl-xCaxO solid solutions grow despite a larger miscibility gap in this system than in any system for which epitaxial solid solutions have been grown. We describe attempts to use these materials as adjustable-lattice constant epitaxial building blocks

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