GaN tunnel junction as a current aperture in a blue surface-emitting light-emitting diode

2002 ◽  
Vol 80 (11) ◽  
pp. 1933-1935 ◽  
Author(s):  
Seong-Ran Jeon ◽  
Chang Sok Oh ◽  
Jeon-Wook Yang ◽  
Gye Mo Yang ◽  
Byueng-Su Yoo
Author(s):  
Man-Fang Huang ◽  
Ya-Hsuan Shih ◽  
Jih-Yuan Chang ◽  
Yen-Lung Huang ◽  
Jinn-Kong Sheu ◽  
...  

Nano Letters ◽  
2020 ◽  
Vol 20 (6) ◽  
pp. 4162-4168 ◽  
Author(s):  
Yong-Ho Ra ◽  
Cheul-Ro Lee

MRS Bulletin ◽  
2005 ◽  
Vol 30 (7) ◽  
pp. 515-517 ◽  
Author(s):  
Nick Holonyak

AbstractSimple diagrams are used to show the transformation of a thin sample of intrinsic, direct-gap semiconductor from an ideal “flat-band” photopumped recombination-radiation light source into a current-driven, p–n junction “ultimate lamp,” a light-emitting diode.


Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 418 ◽  
Author(s):  
Yi-Yun Chen ◽  
Yuan-Chang Jhang ◽  
Chia-Jung Wu ◽  
Hsiang Chen ◽  
Yung-Sen Lin ◽  
...  

An indium gallium nitride (InGaN) light-emitting diode (LED) with an embedded porous GaN reflector and a current confined aperture is presented in this study. Eight pairs of n+-GaN:Si/GaN in stacked structure are transformed into a conductive, porous GaN/GaN reflector through an electrochemical wet-etching process. Porous GaN layers surrounding the mesa region were transformed into insulating GaOx layers in a reflector structure through a lateral photoelectrochemical (PEC) oxidation process. The electroluminescence emission intensity was localized at the central mesa region by forming the insulating GaOx layers in a reflector structure as a current confinement aperture structure. The PEC-LED structure with a porous GaN reflector and a current-confined aperture surrounded by insulating GaOx layers has the potential for nitride-based resonance cavity light source applications.


2017 ◽  
Vol 110 (10) ◽  
pp. 102104 ◽  
Author(s):  
S. Neugebauer ◽  
M. P. Hoffmann ◽  
H. Witte ◽  
J. Bläsing ◽  
A. Dadgar ◽  
...  

2005 ◽  
Vol 892 ◽  
Author(s):  
David Nicol ◽  
Shalini Gupta ◽  
Nola Li ◽  
Ali Asghar ◽  
Elton Graugnard ◽  
...  

AbstractThe developments of two major components of a three terminal dual wavelength LED for excitation of multiple phosphors are described. Such a configuration will be novel Broadband Spectrally Dynamic Light Emitting Diode (BSDLED). First, work towards a functional tunnel junction in the GaN system is discussed. The developments of p+ and n+ GaN layers are specifically discussed in relation to their use in a buried current spreading contact layer. Second, the analysis of several phosphors and their application in a spectrally dynamic source is explored. The response to multiple wavelengths of the phosphors is analyzed to create a light source that can be tuned in “real time” to a wide range of correlated color temperatures.


Materials ◽  
2020 ◽  
Vol 13 (17) ◽  
pp. 3778
Author(s):  
Jingjing Yang ◽  
Zhaofei Mao ◽  
Ruiping Zheng ◽  
Hao Liu ◽  
Lei Shi

Yarn-shaped supercapacitors with great flexibility are highly anticipated for smart wearable devices. Herein, a device for continuously producing oriented nanofiber yarn based on solution blowing was invented, which was important for the nanofiber yarn electrode to realize mass production. Further, the yarn-shaped supercapacitor was assembled by the yarn electrode with the polypyrrole (PPy) grown on aligned carbon fiber bundles@Polyacrylonitrile nanofibers (CFs@PAN NFs). Electrical conductivity and mechanical properties of the yarn electrode can be improved by the carbon fiber bundles. The specific surface area of the yarn electrode can be enlarged by PPy. The yarn-shaped supercapacitors assembled by the PVA/LiCl/H3PO4 gel electrolyte showed high areal specific capacitance of 353 mF cm−2 at a current density of 0.1 A g−1, and the energy density was 48 μWh cm−2 when the power density was 247 μW cm−2. The supercapacitors also exhibited terrific cycle stability (82% after 20,000 cycles). We also proved that this yarn-shaped supercapacitor could easily power up the light emitting diode. This yarn-shaped supercapacitor was meaningful for the development of the smart wearable devices, especially when combined with clothing or fabrics.


Nano Letters ◽  
2017 ◽  
Vol 17 (2) ◽  
pp. 1212-1218 ◽  
Author(s):  
S. M. Sadaf ◽  
S. Zhao ◽  
Y. Wu ◽  
Y.-H. Ra ◽  
X. Liu ◽  
...  

Molecules ◽  
2021 ◽  
Vol 27 (1) ◽  
pp. 76
Author(s):  
Chien-Liang Chiu ◽  
Meng-Syun Lin ◽  
Yi-Chen Wu

The components of OLED encapsulation with hermetic sealing and a 1026-day lifetime were measured by PXI-1033. The optimal characteristics were obtained when the thickness of the TPBi layer was 20 nm. This OLED obtained a maximum luminance (Lmax) of 25,849 cd/m2 at a current density of 1242 mA/cm2, an external quantum efficiency (EQE) of 2.28%, a current efficiency (CE) of 7.20 cd/A, and a power efficiency (PE) of 5.28 lm/W. The efficiency was enhanced by Lmax 17.2%/EQE 0.89%/CE 42.1%/PE 41.9%. The CIE coordinates of 0.32, 0.54 were all green OLED elements with wavelengths of 532 nm. The shear strain and leakage test gave results of 16 kgf and 8.92 × 10−9 mbar/s, respectively. The reliability test showed that the standard of MIL-STD-883 was obtained.


2022 ◽  
Author(s):  
Jiamang Che ◽  
Hua Shao ◽  
Chunshuang Chu ◽  
Qingqing Li ◽  
Yonghui Zhang ◽  
...  

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