Investigation of interface trap states in TiN/Al2O3/p-Si capacitor by deep level transient spectroscopy

2003 ◽  
Vol 82 (7) ◽  
pp. 1066-1068 ◽  
Author(s):  
In Sang Jeon ◽  
Jaehoo Park ◽  
Dail Eom ◽  
Cheol Seong Hwang ◽  
Hyeong Joon Kim ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interface Trap ◽  
Trap States ◽  
Transient Spectroscopy

Probing the trap states in N–i–P Sb2(S,Se)3 solar cells by deep-level transient spectroscopy

2020 ◽  
Vol 153 (12) ◽  
pp. 124703
Author(s):  
Weitao Lian ◽  
Rongfeng Tang ◽  
Yuyuan Ma ◽  
Chunyan Wu ◽  
Chao Chen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Trap States ◽  
Transient Spectroscopy

C-V AND DLTS CHARACTERIZATION OF RAPID THERMAL OXIDES ON Si0.887Ge0.113 AND Si0.8811Ge0.113C0.0059 ALLOYS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4207-4210 ◽  
Author(s):  
W. FENG ◽  
W. K. CHOI ◽  
L. K. BERA ◽  
J. MI ◽  
C. Y. YANG
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
High Temperature Oxidation ◽  
Oxidation Process ◽  
Deep Level ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Temperature Oxidation ◽  
Different Temperatures ◽  
Transient Spectroscopy

Capacitance versus voltage (C-V) and deep level transient spectroscopy (DLTS) characterization was performed on rapid thermal oxides (RTO) on Si 0.887 Ge 0.113 and Si 0.8811 Ge 0.113 C 0.0059 alloys. A high interface trap density (~ 1012 eV -1 cm -2) and a high apparent doping level were obtained for the SiO 2/ Si 0.8811 Ge 0.113 C 0.0059 samples. The C-V results at different temperatures showed that the high apparent doping levels of the SiO 2/ Si 0.8811 Ge 0.113 C 0.0059 samples might be due to the formation of SiC-related defects introduced by the high temperature oxidation process.

Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy

2020 ◽  
Vol 41 (5) ◽  
pp. 685-688 ◽  
Author(s):  
Song Yang ◽  
Sen Huang ◽  
Jin Wei ◽  
Zheyang Zheng ◽  
Yuru Wang ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Trap States ◽  
Hemt Structure ◽  
Transient Spectroscopy

Electrical Signature of Ion-Implantation Induced Defects in n-Silicon in the Defect Cluster Regime Studied using DLTS and Isothermal Transient Spectroscopies

2002 ◽  
Vol 719 ◽  
Author(s):  
Samarendra P. Singh ◽  
Vineet Rao ◽  
Y. N. Mohapatra ◽  
Sanjay Rangan ◽  
S. Ashok
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Defect Cluster ◽  
Trap States ◽  
Charge Redistribution ◽  
Experimental Conditions ◽  
Defect Clusters ◽  
Dominant Point ◽  
Transient Spectroscopy ◽  
Induced Defects

AbstractWe study electrical signature of defect clusters in KeV Ar ion-implanted n-silicon using Deep Level Transient Spectroscopy (DLTS) and isothermal capacitance spectroscopies such as time analyzed transient spectroscopy (TATS) and high resolution Laplace-DLTS. The samples are annealed at relatively low temperatures of 350 °C - 600 °C at which defect clusters are known to form and evolve. Contrary to the view that few dominant point-defect like traps are associated with defect clusters, our results show that the band gap may be replete with bands of multiple trap states; however their occupation and hence observation depends on experimental conditions dictated by dynamics of carrier capture and emission at these traps. Charge redistribution among multiple states and deepening of effective emission energy with capture are shown to be commonly occurring at these defects. Isothermal transient spectroscopy is shown to be appropriate tool for recognition of some of these features.

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