WITHDRAWN: DC bias dependence of local deep level transient spectroscopy spectrum and quantitative two-dimensional imaging of SiO2/SiC interface trap density

2017 ◽  
Author(s):  
N. Chinone ◽  
R. Kosugi ◽  
S. Harada ◽  
Y. Tanaka ◽  
H. Okumura ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Two Dimensional ◽  
Dc Bias ◽  
Transient Spectroscopy

Two-Dimensional Local Deep-Level Transient Spectroscopy Imaging Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2016 ◽  
Author(s):  
N. Chinone ◽  
Y. Cho ◽  
R. Kosugi ◽  
Y. Tanaka ◽  
S. Harada ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Higher Order ◽  
Trap Density ◽  
New Technique ◽  
Two Dimensional ◽  
Nonlinear Dielectric ◽  
Annealing Conditions ◽  
Transient Spectroscopy ◽  
A New Technique

Abstract A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique. SiCVSiC structure samples with different post oxidation annealing conditions were measured. We observed that the local DLTS signal decreases with post oxidation annealing (POA), which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiCVSiC interface.

C-V AND DLTS CHARACTERIZATION OF RAPID THERMAL OXIDES ON Si0.887Ge0.113 AND Si0.8811Ge0.113C0.0059 ALLOYS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4207-4210 ◽  
Author(s):  
W. FENG ◽  
W. K. CHOI ◽  
L. K. BERA ◽  
J. MI ◽  
C. Y. YANG
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
High Temperature Oxidation ◽  
Oxidation Process ◽  
Deep Level ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Temperature Oxidation ◽  
Different Temperatures ◽  
Transient Spectroscopy

Capacitance versus voltage (C-V) and deep level transient spectroscopy (DLTS) characterization was performed on rapid thermal oxides (RTO) on Si 0.887 Ge 0.113 and Si 0.8811 Ge 0.113 C 0.0059 alloys. A high interface trap density (~ 1012 eV -1 cm -2) and a high apparent doping level were obtained for the SiO 2/ Si 0.8811 Ge 0.113 C 0.0059 samples. The C-V results at different temperatures showed that the high apparent doping levels of the SiO 2/ Si 0.8811 Ge 0.113 C 0.0059 samples might be due to the formation of SiC-related defects introduced by the high temperature oxidation process.

Two-Dimensional Imaging of Trap Distribution in SiO2/SiC Interface Using Local Deep Level Transient Spectroscopy Based on Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2017 ◽  
Vol 897 ◽  
pp. 127-130
Author(s):  
Norimichi Chinone ◽  
Ryoji Kosugi ◽  
Yasunori Tanaka ◽  
Shinsuke Harada ◽  
Hajime Okumura ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Higher Order ◽  
Trap Density ◽  
New Technique ◽  
Two Dimensional ◽  
Nonlinear Dielectric ◽  
Transient Spectroscopy ◽  
A New Technique

A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique, SiO2/SiC structure samples with different post oxidation annealing (POA) conditions were measured. We observed that the local DLTS signal decreases with POA levels, which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiO2/SiC interface.

Investigation of interface trap states in TiN/Al2O3/p-Si capacitor by deep level transient spectroscopy

2003 ◽  
Vol 82 (7) ◽  
pp. 1066-1068 ◽  
Author(s):  
In Sang Jeon ◽  
Jaehoo Park ◽  
Dail Eom ◽  
Cheol Seong Hwang ◽  
Hyeong Joon Kim ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interface Trap ◽  
Trap States ◽  
Transient Spectroscopy

scholarly journals Identification of Slow States at the SiO2/SiC Interface through Sub-Bandgap Illumination

2012 ◽  
Vol 717-720 ◽  
pp. 801-804
Author(s):  
Christopher M. Spargo ◽  
Benjamin J.D. Furnival ◽  
R.M. Mahapatra ◽  
J.P. Goss ◽  
Nicolas G. Wright ◽  
...  
Keyword(s):  
Band Gap ◽  
Deep Level ◽  
Interface States ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Interface Traps ◽  
The Creation ◽  
Minority Carriers

We show that it is possible to obtain information relating to deep level interface traps, or so called ‘slow states’, by using the photo-CV characterisation method. Sub-bandgap illumination has been chosen in order to avoid band-to-band excitation for the creation of minority carriers. This enables information to be extracted from trapping states at the SiO2/SiC interface that are energetically deep within the band gap. Empirical observations of deep level trapping states with life times in the order of tens of hours are reported and the interface trap density as a function of energy has been extracted using the Terman method. Characterisation of these interface states will aid the development of new fabrication processes, with the aim of reducing the interface trap density to the same level as that of the SiO2/Si interface and facilitating the production of higher quality SiC based devices.

Deep Level Characterization and Passivation in Heteroepitaxial Inp

1993 ◽  
Vol 325 ◽  
Author(s):  
B. Chatterjee ◽  
S. A. Ringel ◽  
R. Sieg ◽  
I. Weinberg ◽  
R. Hoffman
Keyword(s):  
Electrical Activity ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Trap Density ◽  
Pulse Time ◽  
Gaas Substrates ◽  
Transient Spectroscopy ◽  
Logarithmic Dependence

AbstractDeep levels in MOCVD grown p-InP on GaAs substrates have been investigated by Deep Level Transient Spectroscopy (DLTS). The effect of hydrogenation on the electrical activity of these levels has been studied through a combination of DLTS and Photoluminescence (PL) measurements. DLTS measurements indicate a drop of trap density from σ 5 × 1014 cm−3 to σ 1 × 1012 cm−3 after hydrogenation. Annealing at 400°C reactivated only the dopants, while temperatures above 600°C were necessary for deep-level reactivation. This combined with a logarithmic dependence on fill pulse time, indicate that at least one broad DLTS peak is associated with dislocations. The PL the DLTS results show that the dislocation related traps are passivated by hydrogen, preferentially over the dopants and that a wide annealing window exists for dopant reactivation.

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