Hot-carrier charge trapping and trap generation in HfO2 and Al2O3 field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1586985 ◽

2003 ◽

Vol 94 (3) ◽

pp. 1728-1737 ◽

Author(s):

Arvind Kumar ◽

Massimo V. Fischetti ◽

Tak H. Ning ◽

Evgeni Gusev

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Hot Carrier ◽

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Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses

Applied Physics Letters ◽

10.1063/1.4826918 ◽

2013 ◽

Vol 103 (18) ◽

pp. 183502 ◽

Author(s):

Weichun Luo ◽

Hong Yang ◽

Wenwu Wang ◽

Lichuan Zhao ◽

Hao Xu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Physical Understanding ◽

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Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress

Applied Physics Letters ◽

10.1063/1.3697644 ◽

2012 ◽

Vol 100 (15) ◽

pp. 152102 ◽

Author(s):

Wen-Hung Lo ◽

Ting-Chang Chang ◽

Jyun-Yu Tsai ◽

Chih-Hao Dai ◽

Ching-En Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Stress

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Hot Carrier ◽

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Suppression of Parasitic Bipolar Action and Improvement of Hot-Carrier Reliability in Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted Oxygen) Introducing Recombination Centers near Source Junction

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.6175 ◽

1997 ◽

Vol 36 (Part 1, No. 10) ◽

pp. 6175-6180 ◽

Author(s):

Toshiaki Tsuchiya ◽

Terukazu Ohno ◽

Satoshi Tazawa ◽

Masaaki Tomizawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Hot Carrier ◽

Recombination Centers

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The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c009 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C009 ◽

Author(s):

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Layer Deposition ◽

Hot Carrier Stress

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Visible-blind UV monitoring with a photochromic charge trapping layer in organic field-effect transistors

Applied Physics Letters ◽

10.1063/1.5113749 ◽

2019 ◽

Vol 115 (11) ◽

pp. 113302 ◽

Author(s):

Jing-Jing Lv ◽

Xu Gao ◽

Lin-Xi Zhang ◽

Yang Feng ◽

Jian-Long Xu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Organic Field Effect Transistors ◽

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Sensitivity enhancement of ion sensors by charge trapping on Extended Gate Field Effect Transistors

2013 IEEE International Conference of Electron Devices and Solid-state Circuits ◽

10.1109/edssc.2013.6628174 ◽

2013 ◽

Author(s):

K. I. Ho ◽

C. H. Chen ◽

C. F. Lu ◽

Chao-Sung Lai ◽

Chun-Chang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Sensitivity Enhancement ◽

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The Generation Process of Interface Traps by Hot-Carrier Injection in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc09 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC09 ◽

Author(s):

Ming Hu ◽

Takuya Yamane ◽

Toshiaki Tsuchiya

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Generation Process ◽

Interface Traps ◽

Carrier Injection ◽

Hot Carrier ◽

Hot Carrier Injection

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Reliability of black phosphorus field-effect transistors with respect to bias-temperature and hot-carrier stress

2017 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2017.7936338 ◽

2017 ◽

Author(s):

Yu. Yu. Illarionov ◽

M. Waltl ◽

M. Tech ◽

J.-S. Kim ◽

D. Akinwande ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Black Phosphorus ◽

Hot Carrier ◽

Hot Carrier Stress

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On resolving hot carrier induced degradation mechanisms in silicon‐on‐sapphire metal‐oxide‐semiconductor field‐effect transistors

Applied Physics Letters ◽

10.1063/1.110646 ◽

1993 ◽

Vol 63 (14) ◽

pp. 1912-1914 ◽

Author(s):

E. Y. Chao ◽

G. P. Li

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Degradation Mechanisms ◽

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