Sensitivity enhancement of ion sensors by charge trapping on Extended Gate Field Effect Transistors

The stability of the subthreshold swing (SS) is quite important for switch and memory applications in logic circuits. The SS in our MoS2 field effect transistor (FET) is enlarged when the gate voltage sweep range expands towards the negative direction. This is quite different from other reported MoS2 FETs whose SS is almost constant while varying gate voltage sweep range. This anomalous SS enlargement can be attributed to interface states at the MoS2–SiO2 interface. Moreover, a deviation of SS from its linear relationship with temperature is found. We relate this deviation to two main reasons, the energetic distribution of interface states and Fermi level shift originated from the thermal activation. Our study may be helpful for the future modification of the MoS2 FET that is applied in the low power consumption devices and circuits.

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Gate-Bias Controlled Charge Trapping as a Mechanism for NO2 Detection with Field-Effect Transistors

Advanced Functional Materials ◽

10.1002/adfm.201001560 ◽

2010 ◽

Vol 21 (1) ◽

pp. 100-107 ◽

Cited By ~ 44

Author(s):

Anne-Marije Andringa ◽

Juliaan R. Meijboom ◽

Edsger C. P. Smits ◽

Simon G. J. Mathijssen ◽

Paul W. M. Blom ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Gate Bias ◽

No2 Detection

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Hot-carrier charge trapping and trap generation in HfO2 and Al2O3 field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1586985 ◽

2003 ◽

Vol 94 (3) ◽

pp. 1728-1737 ◽

Cited By ~ 46

Author(s):

Arvind Kumar ◽

Massimo V. Fischetti ◽

Tak H. Ning ◽

Evgeni Gusev

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Hot Carrier ◽

Carrier Charge

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CHARGE STORAGE IN CARBON NANOTUBE FIELD-EFFECT TRANSISTORS

International Journal of Nanoscience ◽

10.1142/s0219581x06004784 ◽

2006 ◽

Vol 05 (04n05) ◽

pp. 553-557

Author(s):

HONG LI ◽

QING ZHANG ◽

JINGQI LI

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistors ◽

Hysteresis Loops ◽

Charge Trapping ◽

Single Wall Carbon Nanotubes ◽

Single Wall Carbon ◽

Lower Temperature ◽

Hysteresis Characteristics ◽

Foreign Species

Very significant hysteresis characteristics are found in single wall carbon nanotubes field-effect transistors (CNTFET) fabricated using AC dielectrophoresis method. The CNTFETs show ambipolar characteristics. Two clear hysteresis loops are observed when the gate voltage is forward and backward swept. The hysteresis characteristics are studied from room temperature down to 16 K. It is found that the hysteresis loops become smaller as temperature is decreased. We suggested that the hysteresis is caused by charge trapping in foreign species covering the single wall carbon nanotube. It is more difficult for charges to transfer into and out of the trapping center at a lower temperature; as a result, the hysteresis loops become much smaller at low temperature.

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