Amorphous Hydrogenated Carbon Films Deposited by PECVD: Nitrogen Incorporation during Film Growth and by Plasma Surface Processing

2003 ◽  
Author(s):  
F. L. Freire
2004 ◽  
Vol 338-340 ◽  
pp. 503-508 ◽  
Author(s):  
G. Capote ◽  
R. Prioli ◽  
P.M. Jardim ◽  
A.R. Zanatta ◽  
L.G. Jacobsohn ◽  
...  

1989 ◽  
Vol 153 ◽  
Author(s):  
K.G. Tschersich

AbstractAmorphous hydrogenated carbon films are deposited by direct ion beam deposition onto Si and W substrates at room temperature. Simultaneously, the sample surface composition is measured by Auger electron spectroscopy. The results indicate a sharp interface between film and Si and the formation of a W2C layer between film and W. The in-situ measurements are compared with sputter depth profiles. It is found that the former ones give insight into film growth processes, that is unattainable by sputter profiling.


1993 ◽  
Vol 334 ◽  
Author(s):  
I.B. Graff ◽  
R.A. Pugliese ◽  
P.R. Westmoreland

AbstractMolecular-beam mass spectrometry has been used to study plasma-enhanced chemical vapor deposition (PECVD) of diamondlike carbon films. A threshold-ionization technique was used to identify and quantify species in the plasma. Mole fractions of H, H2, CH4, C2H2, C2H6 and Ar were measured in an 83.3% CH4/Ar mixture at a pressure of 0.1 torr and a total flow of 30 sccm. Comparisons were made between mole fractions measured at plasma powers of 25W and 50W. These results were compared to measured concentration profiles and to film growth rates.


2012 ◽  
Vol 35 (7) ◽  
pp. 1087-1091
Author(s):  
HAIYANG DAI ◽  
CHANGYONG ZHAN ◽  
HUI JIANG ◽  
NINGKANG HUANG

1993 ◽  
Vol 316 ◽  
Author(s):  
J. Ullmann ◽  
A. Weber ◽  
U. Falke

ABSTRACTFor a deeper understanding of the creation of carbon films the hydrogen-free ion assisted evaporation (IAE) method with neon species was used. Variation of the ion parameters energy and ion to neutral arrival ratio, delivering the necessary energy for modification of the film growth, results in different microstructures investigated with EELS, HRTEM and TED as well as different microhardnesses measured by dynamical Vickers indentation. A possible film growth mechanism is proposed based on an ion etching of mainly sp2-bonded carbon surface atoms and on defect dominated structure modification below the surface depending on the ion energy


1987 ◽  
Vol 2 (5) ◽  
pp. 645-647 ◽  
Author(s):  
Shuhan Lin ◽  
Shuguang Chen

Optical properties of plasma-deposited amorphous hydrogenated carbon films were studied by spectroscopic ellipsometry. From the ellipsometry data, the real and imaginary parts, n and k, of the complex index of refraction of the film have been deduced for photon energies between 2.0 and 4.0 eV for as-grown as well as for thermally annealed films. Here n and k showed considerable variation with subsequent annealing, even under 400°C. A tentative explanation of the results is proposed.


2007 ◽  
Vol 363-365 ◽  
pp. 944-948 ◽  
Author(s):  
E. Salançon ◽  
T. Dürbeck ◽  
T. Schwarz-Selinger ◽  
W. Jacob

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