Atomic ordering-induced band gap reductions in GaAsSb epilayers grown by molecular beam epitaxy

2005 ◽  
Vol 97 (6) ◽  
pp. 063701 ◽  
Author(s):  
B. P. Gorman ◽  
A. G. Norman ◽  
R. Lukic-Zrnic ◽  
C. L. Littler ◽  
H. R. Moutinho ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Atomic Ordering

ELECTRON BEAM SOURCE MOLECULAR BEAM EPITAXY OF AlxGa1-xAs GRADED BAND GAP DEVICE STRUCTURES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-607-C4-614
Author(s):  
R. J. MALIK ◽  
A. F.J. LEVI ◽  
B. F. LEVINE ◽  
R. C. MILLER ◽  
D. V. LANG ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Beam Source ◽  
Device Structures ◽  
Graded Band Gap

Determination and modeling of the optical constants of direct band gap Be x Zn1−x Te grown by molecular beam epitaxy

2004 ◽  
Vol 1 (4) ◽  
pp. 706-709
Author(s):  
M. Muñoz ◽  
O. Maksimov ◽  
M. C. Tamargo ◽  
M. R. Buckley ◽  
F. C. Peiris
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Optical Constants ◽  
Molecular Beam ◽  
Direct Band Gap ◽  
Direct Band

Strong band gap reduction in highly mismatched alloy InAlBiAs grown by molecular beam epitaxy

2019 ◽  
Vol 126 (9) ◽  
pp. 095704 ◽  
Author(s):  
Jing Zhang ◽  
Yuejing Wang ◽  
Shoaib Khalid ◽  
Anderson Janotti ◽  
Greg Haugstad ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Strong Band

ECR-MBE and GSMBE of Gallium nitride on Si(111)

1995 ◽  
Vol 395 ◽  
Author(s):  
U. Rossner ◽  
J.-L. Rouviere ◽  
A. Bourret ◽  
A. Barski
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
High Energy ◽  
Emission Peak ◽  
Growth Mode ◽  
Cross Sectional ◽  
Dimensional Growth

ABSTRACTElectron Cyclotron Resonance Plasma Assisted Molecular Beam Epitaxy (ECR-MBE) and Gas Source Molecular Beam Epitaxy (GSMBE) have been used to grow hexagonal GaN on Si (111). In the ECR-MBE configuration high purity nitrogen has been used as nitrogen source. In GSMBE ammonia was supplied directly to the substrate to be thermally cracked in the presence of gallium.By a combined application of in-situ reflection high-energy electron-diffraction (RHEED) and cross-sectional transmission electron microscopy (TEM) the growth mode and structure of GaN were determined. The growth mode strongly depends on growth conditions. Quasi two dimensional growth was observed in ECR-MBE configuration for a substrate temperature of 640°C while three dimensional growth occured in GSMBE configuration in the temperature range from 640 to 800°C.Low temperature (9 K) photoluminescence spectra show that for samples grown by ECR-MBE and GSMBE a strong near band gap emission peak dominates while transitions due to deep level states are hardly detectable. The best optical results (the highest near band gap emission peak intensity) have been observed for samples grown by GSMBE at high temperature (800°C). This could be explained by the increase of grain dimensions (up to 0,3 – 0,5 μm) observed in samples grown by GSMBE at 800°C.

Effects of Substrate Orientation on the Spontaneous Ordering of GaAsSb Epilayers Grown by Molecular Beam Epitaxy

2003 ◽  
Vol 794 ◽  
Author(s):  
Brian P. Gorman ◽  
Andrew G. Norman ◽  
Reiko Lukic-Zrnic ◽  
Terry D. Golding ◽  
Chris L. Littler
Keyword(s):  
Raman Spectroscopy ◽  
Fourier Transform ◽  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
Energy Gap ◽  
Atomic Ordering ◽  
Substrate Orientation ◽  
Gaas Substrates ◽  
Transmission Electron

ABSTRACTSpontaneous atomic ordering is investigated in a series of GaAs1−xSbx epilayers (0.51 < x < 0.71) grown by molecular beam epitaxy (MBE) on GaAs substrates with surface orientations of (001), (001) – 8° toward (111)A, (001) – 8° toward (111)B, (115)A, (115)B, (113)A, and (113)B. Atomic ordering in these epilayers was observed from a decrease in the energy gap measured by Fourier transform infrared (FTIR) absorption spectroscopy and corroborated by superlattice reflections in transmission electron diffraction and Raman spectroscopy. Contrary to previous investigations of ordering in III-V alloys, a marked energy gap reduction corresponding to CuPt-B type ordering is observed in the GaAs1−xSbx grown on (111)A-type orientations.

Electron mobility in HgCdTe near the zero-band-gap grown by molecular beam epitaxy

1992 ◽  
Vol 117 (1-4) ◽  
pp. 218-221 ◽  
Author(s):  
S. Sone ◽  
N. Oda ◽  
T. Sasaki ◽  
M. Kawano
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Electron Mobility ◽  
Molecular Beam
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