ECR-MBE and GSMBE of Gallium nitride on Si(111)

1995 ◽  
Vol 395 ◽  
Author(s):  
U. Rossner ◽  
J.-L. Rouviere ◽  
A. Bourret ◽  
A. Barski
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
High Energy ◽  
Emission Peak ◽  
Growth Mode ◽  
Cross Sectional ◽  
Dimensional Growth

ABSTRACTElectron Cyclotron Resonance Plasma Assisted Molecular Beam Epitaxy (ECR-MBE) and Gas Source Molecular Beam Epitaxy (GSMBE) have been used to grow hexagonal GaN on Si (111). In the ECR-MBE configuration high purity nitrogen has been used as nitrogen source. In GSMBE ammonia was supplied directly to the substrate to be thermally cracked in the presence of gallium.By a combined application of in-situ reflection high-energy electron-diffraction (RHEED) and cross-sectional transmission electron microscopy (TEM) the growth mode and structure of GaN were determined. The growth mode strongly depends on growth conditions. Quasi two dimensional growth was observed in ECR-MBE configuration for a substrate temperature of 640°C while three dimensional growth occured in GSMBE configuration in the temperature range from 640 to 800°C.Low temperature (9 K) photoluminescence spectra show that for samples grown by ECR-MBE and GSMBE a strong near band gap emission peak dominates while transitions due to deep level states are hardly detectable. The best optical results (the highest near band gap emission peak intensity) have been observed for samples grown by GSMBE at high temperature (800°C). This could be explained by the increase of grain dimensions (up to 0,3 – 0,5 μm) observed in samples grown by GSMBE at 800°C.

GaSb layers with low defect density deposited on (001) GaAs substrate in two-dimensional growth mode using molecular beam epitaxy

2019 ◽  
Vol 19 (4) ◽  
pp. 542-547
Author(s):  
Agata Jasik ◽  
Iwona Sankowska ◽  
Andrzej Wawro ◽  
Jacek Ratajczak ◽  
Dariusz Smoczyński ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Defect Density ◽  
Growth Mode ◽  
Two Dimensional ◽  
Dimensional Growth

Low Temperature Epitaxy of Si on Dihydride-Terminated Si (001): Energetic Versus Thermal Growth

1996 ◽  
Vol 441 ◽  
Author(s):  
M. E. Taylor ◽  
Harry A. Atwater ◽  
M. V. Ramana Murty
Keyword(s):  
Molecular Beam Epitaxy ◽  
Pulsed Laser Deposition ◽  
Molecular Beam ◽  
Pulsed Laser ◽  
High Energy ◽  
Interface Roughness ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Comparison Of The Results ◽  
Si Films

AbstractPulsed laser deposition of Si on dihydride-terminated (l×1) Si (001) at low temperatures yields epitaxial layers, unlike molecular beam epitaxy. Si films were grown by ultrahigh vacuum pulsed laser deposition on the dihydride surface at substrate temperatures from 40 °C to 350 ° C. Epitaxial thickness and interface roughness were measured by high-resolution cross-sectional transmission electron microscopy and found to be comparable to known data for Si films grown by molecular beam epitaxy on monohydride-terminated (2×l) Si (001). Si films were grown at 200 °C by pulsed laser deposition on the dihydride surface at argon background pressures between 10− torr and 10−1 torr. Ion probe time of flight data was collected over the same pressure range. Comparison of the results suggests that loss of epitaxy is correlated with low incident energy. This, in conjunction with information on surface reconstruction obtained from reflection high-energy electron diffraction, suggests that the mechanism enabling epitaxy on the dihydride surface is Si subplantation, a mechanism only possible in growth with an energetic beam.

Molecular Beam Epitaxy of ZnS Films on Arsenic Passivated Silicon Surfaces

1993 ◽  
Vol 318 ◽  
Author(s):  
Xiaochuan Zhou ◽  
Wiley P. Kirk
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Three Dimensional ◽  
High Energy ◽  
Silicon Surfaces ◽  
Crystalline Quality ◽  
Dimensional Growth ◽  
Initial Adsorption ◽  
Passivated Silicon ◽  
Zns Films

ABSTRACTThe crystalline quality of ZnS films grown on arsenic covered Si(100) surfaces is shown to be improved as compared to films grown on bare silicon surfaces by MBE (molecular beam epitaxy). Employing RGA (residual gas analyzer) and RHEED (reflection high energy electron diffraction) techniques, we found that a strong initial adsorption of sulfur on bare silicon surfaces led to the formation of disordered silicon-sulfide surfaces. This disordered surface initiated three-dimensional growth of ZnS and resulted in poor crystalline quality. An arsenic overlayer was found to be effective in preventing the interaction of sulfur with the silicon surface and thereby maintained surface ordering. X-ray rocking curve analysis indicated higher crystallinity in ZnS films grown on arsenic covered surfaces.

Defect Studies in n-Type GaN Grown by Molecular Beam Epitaxy

1995 ◽  
Vol 378 ◽  
Author(s):  
W. Götz ◽  
D. B. Oberman ◽  
J. S. Harris
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
Growth Parameters ◽  
Ecr Plasma ◽  
Gas Source ◽  
Deep Donor ◽  
Hall Effect Measurements ◽  
Gas Source Mbe

AbstractGaN thin films grown by molecular beam epitaxy (MBE) were characterized by Hall effect measurements in the temperature range from 80 K to 500 K and by photoluminescence spectroscopy (PL) at 2 K and at 300 K. These films were grown by MBE utilizing either electron cyclotron resonance (ECR) plasma activated nitrogen gas or thermally cracked hydrogen azide (HN3) as the source of chemically reactive nitrogen. The electrical properties of the GaN films grown by ECR plasma assisted MBE were found to vary with growth parameters, dominated either by shallow donors with activation energies (ΔE)in the range between 10 meV and 30 meV or deep donor levels (ΔE; > 500 meV). GaN grown by (HN3) gas-source MBE exhibited metallic conduction and electron mobilities <1 cm2/Vs. However, these films displayed sharp photoluminescence lines at 3.360 eV and 3.298 eV and no deep level related luminescence, whereas only broad deep level related emission was observed in the PL spectra of the ECR plasma assisted MBE grown GaN films.

The Heteronucleation of and Defect Generation in MBE-Grown InAs Layers

1988 ◽  
Vol 144 ◽  
Author(s):  
M. M. AI-Jassim ◽  
J. P. Goral ◽  
P. Sheldon ◽  
K. M. Jones
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
High Energy ◽  
Misfit Dislocations ◽  
High Energy Electron ◽  
Cross Sectional ◽  
Plan View ◽  
Gaas Substrates

ABSTRACTEpitaxial InAs layers were grown by molecular beam epitaxy (MBE) on GaAs substrates. The initial stages of nucleation were studied by in situ reflection high energy electron diffraction (RHEED). Cross-sectional TEM examination was used to investigate the morphology of the growing layer, while plan-view examination revealed the generation of misfit dislocations. The growth mode was found to depend mainly on the conditions used to nucleate the epitaxial layer. In most cases, Stranski-Krastanov type of growth was observed.

Highly flat GexSi1−x/Si heterointerfaces grown by molecular beam epitaxy in two-dimensional growth mode

Vacuum ◽  
1992 ◽  
Vol 43 (11) ◽  
pp. 1035-1037 ◽  
Author(s):  
X Wei ◽  
GL Zhou ◽  
TC Zhou ◽  
C Sheng ◽  
MR Yu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Mode ◽  
Two Dimensional ◽  
Dimensional Growth
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