scholarly journals Residual strains in cubic silicon carbide measured by Raman spectroscopy correlated with x-ray diffraction and transmission electron microscopy

2006 ◽  
Vol 100 (8) ◽  
pp. 083514 ◽  
Author(s):  
M. A. Capano ◽  
B. C. Kim ◽  
A. R. Smith ◽  
E. P. Kvam ◽  
S. Tsoi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Residual Strains ◽  
Cubic Silicon Carbide

Dependence of the Product's Phase Composition on the Ratio of Precursors in Plasmadynamic Synthesis of Silicon Carbide

2018 ◽  
Vol 769 ◽  
pp. 114-119 ◽  
Author(s):  
Artur A. Sivkov ◽  
Artur Nassyrbayev ◽  
Maksim Gukov
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
Synthesis Method ◽  
X Ray Diffraction ◽  
Central Electrode ◽  
X Ray ◽  
Transmission Electron ◽  
Cubic Silicon Carbide ◽  
Accelerator Channel ◽  
Coaxial Magnetoplasma Accelerator

In this work, the powder of nanoscale cubic SiC was obtained by the plasmodynamic synthesis in a coaxial magnetoplasma accelerator (CMPA) with a graphite central electrode and an accelerator channel. The synthesis method allows obtaining a product with a high content of nanoscale cubic silicon carbide. The work is aimed to study the influence of the precursor’s ratio on the product. The synthesized products were analyzed by X-ray diffraction and transmission electron microscopy.

The structural changes of polycrystalline film C60/C70: Ni caused by Ni diffusion

1996 ◽  
Vol 11 (12) ◽  
pp. 3146-3151 ◽  
Author(s):  
E. Czerwosz ◽  
P. Byszewski ◽  
R. Diduszko ◽  
H. Wronka ◽  
P. Dluźewski ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Structural Changes ◽  
Thermal Conditions ◽  
Vacuum Deposition ◽  
X Ray Diffraction ◽  
Polycrystalline Structure ◽  
X Ray ◽  
Transmission Electron

C60/C70: Ni films with 1.5 wt. % Ni concentration obtained by vacuum deposition under different thermal conditions have been investigated. The structural changes of the layers were investigated by transmission electron microscopy, electron and x-ray diffraction, and Raman spectroscopy. The polycrystalline structure was detected for the layers grown at approximately 450 K on the substrate. At elevated temperature and maintained temperature gradient on the substrate during the process, the changes of the layer's structure and the formation of Ni microcrystals were observed. The Ni microcrystals (5–10 nm in the diameter) and the elongated shapes dimensioned 10 × 150 nm were perceived.

Sol-gel processing of nanocrystalline haematite thin films

1997 ◽  
Vol 12 (6) ◽  
pp. 1441-1444 ◽  
Author(s):  
L. Armelao ◽  
A. Armigliato ◽  
R. Bozio ◽  
P. Colombo
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Single Particles ◽  
X Ray ◽  
Transmission Electron ◽  
Gel Processing

The microstructure of Fe2O3 sol-gel thin films, obtained from Fe(OCH2CH3)3, was investigated by x-ray diffraction (XRD), transmission electron microscopy (TEM), and Raman spectroscopy. Samples were nanocrystalline from 400 °C to 1000 °C, and the crystallized phase was haematite. In the coatings, the α–Fe2O3 clusters were dispersed as single particles in a network of amorphous ferric oxide.

scholarly journals Влияние термообработки на свойства композитных кремний-углеродных анодов для литий-ионных аккумуляторов

2020 ◽  
Vol 46 (3) ◽  
pp. 14
Author(s):  
Е.В. Астрова ◽  
А.В. Парфеньева ◽  
А.М. Румянцев ◽  
В.П. Улин ◽  
М.В. Байдакова ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Carbide ◽  
Diffraction Analysis ◽  
Annealing Temperature ◽  
Argon Atmosphere ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Lithium Alloys

The effect of annealing temperature in argon atmosphere on the ability of Si-C nanocomposites to reversibly insert lithium was investigated. It was found that the higher the annealing temperature during the formation of the composite, the lower is the capacitance of the electrode made from it. X-ray diffraction analysis and transmission electron microscopy reveal that the reason of the capacitance decrease is formation at T  1100°C of silicon carbide of cubic modification -SiC, inactive with respect to the formation of lithium alloys or intercalates.

scholarly journals Photocatalytic Reduction of CO2Using TiO2-Graphene Nanocomposites

2016 ◽  
Vol 2016 ◽  
pp. 1-5 ◽  
Author(s):  
Jinghua Liu ◽  
Yinghua Niu ◽  
Xiong He ◽  
Jingyao Qi ◽  
Xin Li
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Chemical Method ◽  
X Ray Diffraction ◽  
Graphene Nanocomposites ◽  
X Ray ◽  
Transmission Electron ◽  
Simple Chemical ◽  
Adsorption Desorption

TiO2-graphene (TiO2-RGO) nanocomposites were preparedviaa simple chemical method by using graphene oxide (GO) and TiO2nanoparticles as starting materials. The morphologies and structural properties of the as-prepared composites were characterized by X-ray diffraction, Raman spectroscopy, N2adsorption-desorption measurements, and transmission electron microscopy. TiO2-RGO nanocomposites exhibited great photocatalytic activity toward reduction of CO2into CH4(2.10 μmol g−1 h−1) and CH3OH (2.20 μmol g−1 h−1), which is attributed to the synergistic effect between TiO2and graphene.

Electron beam-induced surface modification and nano-engineering of carbon nanotubes: Single-walled and multiwalled

2006 ◽  
Vol 21 (12) ◽  
pp. 3109-3123 ◽  
Author(s):  
S. Gupta ◽  
R.J. Patel ◽  
R.E. Giedd
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Electron Beam ◽  
Electron Microscope ◽  
High Resolution ◽  
Band Intensity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

Influence of low and medium energy electron beam (E-beam) irradiation on the single-walled (SW) and multiwalled (MW) carbon nanotube films grown by microwave chemical vapor deposition are investigated. These films were subjected to electron beam energy of 50 keV from scanning electron microscope for 2.5, 5.5, 8.0, and 15 h and 100, 200, and 300 keV from transmission electron microscope electron gun for a few minutes to approximately 2 h continuously. To assess the surface modifications/structural degradation, the films were analyzed prior to and post-irradiation using x-ray diffraction and micro-Raman spectroscopy in addition to in situ monitoring by scanning and high-resolution transmission electron microscopy. A minimal increase in intertube or interplanar spacing (i.e., d002) for MW nanotubes ranging from 3.25–3.29 Å (∼3%) can be analogized to change in c-axis of graphite lattice due to thermal effects measured using x-ray diffraction. Resonance Raman spectroscopy revealed that irradiation generated defects in the lattice evaluated through variation of: the intensity of radial breathing mode (RBM), intensity ratio of D to G band (ID/IG), position of D and G bands and their harmonics (D* and G*). The increase in the defect-induced D band intensity, quenching of RBM intensity, and only a slight increase in G band intensity are some of the implications. The MW nanotubes tend to reach a state of saturation for prolonged exposures, while SW transforming semiconducting to quasi-metallic character. Softening of the q = 0 selection rule is suggested as a possible way to explain these results. It is also suggestive that knock-on collision may not be the primary cause of structural degradation, rather a local gradual reorganization, i.e., sp2+δ ⇔ sp2+δ, sp2 C seems quite possible. Experiments showed that with extended exposures, both kinds of nanotubes displayed various local structural instabilities including pinching, graphitization/amorphization, and forming intra-molecular junction (IMJ) within the area of electron beam focus possibly through amorphous carbon aggregates. They also displayed curling and closure forming nano-ring and helix-like structures while mending their dangling bonds. High-resolution transmission electron microscopy electrons corroborated these conclusions. Manufacturing of nanoscale structures “nano-engineering” of carbon-based systems is tentatively ascribed to irradiation-induced solid-state phase transformation, in contrast to conventional nanotube synthesis from the gas phase.

Characteristics of titanium nitride films grown by pulsed laser deposition

1996 ◽  
Vol 11 (6) ◽  
pp. 1458-1469 ◽  
Author(s):  
R. Chowdhury ◽  
R. D. Vispute ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Titanium Nitride ◽  
Room Temperature ◽  
Room Temperature Resistivity ◽  
X Ray Diffraction ◽  
Tin Films ◽  
X Ray ◽  
Transmission Electron

Laser physical vapor deposition (LPVD) has been used to grow titanium nitride films on hydrogen-terminated silicon(100) substrates at deposition temperatures ranging from room temperature to 600 °C. A pulsed KrF excimer laser (λ = 248 nm, τ = 25 ns) was used with the deposition chamber maintained at a base pressure of 10−7 Torr prior to deposition. Different properties of the films were investigated by x-ray diffraction, Auger electron spectroscopy, Raman spectroscopy, optical, scanning, and high resolution transmission electron microscopy, and measurement of electrical resistivity. When the substrate temperature was low (at and below 500 °C), oxygen atoms from the residual gases were incorporated in the films. The microstructures and resistivities of TiN films were found to be strongly dependent on the temperature of the silicon substrates. The TiN films deposited at 600 °C were oxygen-free, as observed from Auger analysis, and the room temperature resistivity was found to be 14–15 μΩ-cm. Raman spectroscopy of the films showed that the nitrogen-related optical phonon peak increased with deposition temperature in comparison with the titanium-related acoustic peak. Transmission electron microscopy and x-ray diffraction analyses showed that the films were polycrystalline at low temperature with grain size ranging from 300–600 Å, depending on the temperature of the substrate. At 600 °C, the films were found to be single crystals with occasional presence of dislocation loops. The spacing of Moiré fringes in TiN/Si samples deposited at 600 °C established the nearly periodic elastic strain field extending into the TiN and Si at the interface. Although there exists a large misfit between TiN and Si (24.6%), the epitaxial growth of TiN films on Si(100) substrates was explained by means of domain-matched epitaxy with a 4-to-3 match in unit cells for TiN/Si structure, giving rise to a residual lattice misfit of only 4%.

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