Sputtering and Chemical Modification of Solid Surfaces by Water Cluster Ion Beams

2006 ◽  
Author(s):  
G. H. Takaoka ◽  
K. Nakayama ◽  
D. Takeda ◽  
M. Kawashita



Vacuum ◽  
2009 ◽  
Vol 84 (5) ◽  
pp. 501-504 ◽  
Author(s):  
Hiromichi Ryuto ◽  
Keiji Tada ◽  
Gikan H. Takaoka


2008 ◽  
Vol 79 (2) ◽  
pp. 02C503 ◽  
Author(s):  
Gikan H. Takaoka ◽  
Masakazu Kawashita ◽  
Takeshi Okada


2006 ◽  
Vol 4 ◽  
pp. 473-477 ◽  
Author(s):  
Gikan H. Takaoka ◽  
Hidetaka Noguchi ◽  
Kazuya Nakayama ◽  
Masakazu Kawashita


2006 ◽  
Vol 77 (3) ◽  
pp. 03B508 ◽  
Author(s):  
Gikan H. Takaoka ◽  
Hidetaka Noguchi ◽  
Kazuya Nakayama ◽  
Takato Seki ◽  
Masakazu Kawashita


Author(s):  
Gikan H. Takaoka ◽  
Hiromichi Ryuto ◽  
Mitsuaki Takeuchi ◽  
Gaku Ichihashi


2007 ◽  
Vol 1020 ◽  
Author(s):  
Gikan Takaoka ◽  
Masakazu Kawashita ◽  
Takeshi Okada

AbstractIn order to investigate the interactions of methanol cluster ion beams with solid surfaces, Si substrates and SiO2 films were irradiated at different acceleration voltages. The sputtered depth increased with increase of the acceleration voltage. When the acceleration voltage was 9 kV, the sputtered depths of Si and SiO2 at a dose of 1×1016ions/cm2 were 1497.1 nm and 147.8 nm, respectively. The selectivity between Si and SiO2 surfaces arose from the volatility of the reaction products. Furthermore, the sputtering yield for the Si surface was approximately seven hundreds times larger than that by Ar monomer ion beams. This suggested that chemical sputtering was predominant for the methanol cluster ion irradiation. In addition, the etching and cleaning process by the methanol cluster ion irradiation was performed on the Si surfaces contaminated with a small amount of metal particles such as Au and Al. Thus, methanol cluster ion beams have unique characteristics such as surface etching and cleaning with high sputtering yield and smooth surface.



2011 ◽  
Vol 9 ◽  
pp. 163-167
Author(s):  
Gikan H. Takaoka ◽  
Gaku Ichihashi ◽  
Hiromichi Ryuto ◽  
Mitsuaki Takeuchi


1995 ◽  
Vol 396 ◽  
Author(s):  
D. Takeuchi ◽  
J. Matsuo ◽  
I. Yamada

AbstractGas cluster ions contain tens, hundreds or even more than thousands of atoms or molecules as ionized particles. It has been shown that the bombarding effects of gas cluster ions on solid surfaces are quite different from those by monomer ions and involve unique material processing characteristics. In order to make clear the bombarding effects, a study of surface modification of sapphire by Ar and CO2 gas cluster ion beams has been performed. Thickness of the damaged layer and surface roughness produced on sapphire depends strongly on cluster ion energy. Damage layer thickness on a sapphire surface bombarded by 150 keV clusters with average size of about 3000 atoms was 40Å. No significant difference was observed in IR transmittance after cluster bombardment. Mechanical properties of sapphire surfaces can be changed by cluster irradiation at a dose of 1011 ions/cm2.



Sign in / Sign up

Export Citation Format

Share Document