Synchrotron radiation x-ray beam profile monitor using chemical vapor deposition diamond film

2006 ◽  
Vol 77 (12) ◽  
pp. 123105 ◽  
Author(s):  
Togo Kudo ◽  
Sunao Takahashi ◽  
Nobuteru Nariyama ◽  
Toko Hirono ◽  
Takeshi Tachibana ◽  
...  
2018 ◽  
Vol 2018 ◽  
pp. 1-11 ◽  
Author(s):  
Yingda Qian ◽  
Yuanlan Liang ◽  
Xuguang Luo ◽  
Kaiyan He ◽  
Wenhong Sun ◽  
...  

A series of ultrathin InSb films grown on GaAs by low-pressure metalorganic chemical vapor deposition with different V/III ratios were investigated thoroughly using spectroscopic ellipsometry (SE), X-ray diffraction, and synchrotron radiation X-ray absorption spectroscopy. The results predicted that InSb films on GaAs grown under too high or too low V/III ratios are with poor quality, while those grown with proper V/III ratios of 4.20–4.78 possess the high crystalline quality. The temperature-dependent SE (20–300°C) and simulation showed smooth variations of SE spectra, optical constants (n, k, e1, and ε2), and critical energy points (E1, E1+Δ1, E′0, E2, and E′1) for InSb film when temperature increased from 20°C to 250°C, while at 300°C, large changes appeared. Our study revealed the oxidation of about two atomic layers and the formation of an indium-oxide (InO) layer of ∼5.4 nm. This indicates the high temperature limitation for the use of InSb/GaAs materials, up to 250°C.


2004 ◽  
Vol 130 (6) ◽  
pp. 425-428 ◽  
Author(s):  
Zhang Minglong ◽  
Xia Yiben ◽  
Wang Linjun ◽  
Shen Hujiang

1995 ◽  
Vol 77 (11) ◽  
pp. 5916-5923 ◽  
Author(s):  
Richard W. Bormett ◽  
Sanford A. Asher ◽  
Robert E. Witowski ◽  
William D. Partlow ◽  
Robert Lizewski ◽  
...  

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