Enhanced thermal stability and emission intensity of InAs quantum dots covered by an InGaAsSb strain-reducing layer

2006 ◽  
Vol 89 (24) ◽  
pp. 243103 ◽  
Author(s):  
Wei-Sheng Liu ◽  
David M. T. Kuo ◽  
Jen-Inn Chyi ◽  
Wen-Yen Chen ◽  
Hsing-Szu Chang ◽  
...  
2001 ◽  
Vol 171 (12) ◽  
pp. 1365
Author(s):  
E.E. Vdovin ◽  
Yu.N. Khanin ◽  
Yu.V. Dubrovskii ◽  
A. Veretennikov ◽  
A. Levin ◽  
...  

2016 ◽  
Vol E99.C (3) ◽  
pp. 381-384 ◽  
Author(s):  
Takuma YASUDA ◽  
Nobuhiko OZAKI ◽  
Hiroshi SHIBATA ◽  
Shunsuke OHKOUCHI ◽  
Naoki IKEDA ◽  
...  

Molecules ◽  
2021 ◽  
Vol 26 (15) ◽  
pp. 4439
Author(s):  
Shui-Yang Lien ◽  
Yu-Hao Chen ◽  
Wen-Ray Chen ◽  
Chuan-Hsi Liu ◽  
Chien-Jung Huang

In this study, adding CsPbI3 quantum dots to organic perovskite methylamine lead triiodide (CH3NH3PbI3) to form a doped perovskite film filmed by different temperatures was found to effectively reduce the formation of unsaturated metal Pb. Doping a small amount of CsPbI3 quantum dots could enhance thermal stability and improve surface defects. The electron mobility of the doped film was 2.5 times higher than the pristine film. This was a major breakthrough for inorganic quantum dot doped organic perovskite thin films.


Author(s):  
Takaaki Mano ◽  
Akihiro Ohtake ◽  
Neul Ha ◽  
Takeshi Noda ◽  
Yoshiki Sakuma ◽  
...  

2007 ◽  
Author(s):  
M. Kujiraoka ◽  
J. Ishi-Hayase ◽  
K. Akahane ◽  
N. Yamamoto ◽  
K. Ema ◽  
...  

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