Greatly enhanced electric field by the improved metal–insulator–metal structure in the visible region

2019 ◽  
Vol 30 (32) ◽  
pp. 32LT01
Author(s):  
Shiwei Shu ◽  
Chengping Huang ◽  
Meng Zhang ◽  
Yan Yan
Keyword(s):  
Electric Field ◽  
Visible Region ◽  
Metal Structure ◽  
Metal Insulator ◽  
Metal Insulator Metal

scholarly journals Design of a Liquid-Crystal-Tunable Terahertz Demultiplexer Based on a Metal-Insulator-Metal Waveguide

2019 ◽  
Vol 9 (4) ◽  
pp. 644
Author(s):  
Xue-Shi Li ◽  
Naixing Feng ◽  
Yuan-Mei Xu ◽  
Liang-Lun Cheng ◽  
Qing Liu
Keyword(s):  
Liquid Crystal ◽  
Electric Field ◽  
Metal Insulator ◽  
Resonance Modes ◽  
External Bias ◽  
Bias Electric Field ◽  
Metal Waveguide ◽  
Metal Insulator Metal ◽  
Fabry Perot ◽  
Mim Waveguide

A tunable demultiplexer with three output channels infiltrated by liquid crystal (LC) is presented, which is based on a metal-insulator-metal (MIM) waveguide. The operating frequencies of the three output channels can be tuned simultaneously at will by changing the external bias electric field applied to the LC. By analyzing the Fabry-Pérot (FP) resonance modes of the finite-length MIM waveguide both theoretically and numerically, the locations of the three channels are delicately determined to achieve the best demultiplexing effects. Terahertz (THz) signals input from the main channel can be demultiplexed by channels 1, 2 and 3 at 0.7135 THz, 1.068 THz and 1.429 THz, respectively. By applying an external electric field to alter the tilt angle of the infiltrating LC material, the operating frequencies of channels 1, 2 and 3 can be relatively shifted up to 12.3%, 9.6% and 9.7%, respectively. The designed demultiplexer can not only provide a flexible means to demultiplex signals but also tune operating bands of output channels at the same time.

Transmission characteristics and applications of plasmonic slit waveguide based on metal-insulator-metal structure

2012 ◽  
Vol 51 (10) ◽  
pp. 104601-1 ◽  
Author(s):  
Kunhua Wen ◽  
Lianshan Yan ◽  
Wei Pan ◽  
Bin Luo ◽  
Zhen Guo ◽  
...  
Keyword(s):  
Metal Structure ◽  
Transmission Characteristics ◽  
Metal Insulator ◽  
Metal Insulator Metal

Narrow-Band Filter of Surface Plasmon Based on Dual-Section Metal-Insulator-Metal Structure

2013 ◽  
Vol 33 (11) ◽  
pp. 1123003
Author(s):  
罗昕 Luo Xin ◽  
邹喜华 Zou Xihua ◽  
温坤华 Wen Kunhua ◽  
潘炜 Pan Wei ◽  
闫连山 Yan Lianshan ◽  
...  
Keyword(s):  
Surface Plasmon ◽  
Narrow Band ◽  
Metal Structure ◽  
Metal Insulator ◽  
Band Filter ◽  
Metal Insulator Metal ◽  
Narrow Band Filter

Ion Charge Dynamics in Ceria-Based Metal Insulator Metal Structure

2017 ◽  
Vol 121 (42) ◽  
pp. 23406-23412 ◽  
Author(s):  
Vittorio Foglietti ◽  
Nan Yang ◽  
Carmela Aruta ◽  
Pasquale Orgiani ◽  
Fabio Di Pietrantonio ◽  
...  
Keyword(s):  
Metal Structure ◽  
Metal Insulator ◽  
Charge Dynamics ◽  
Metal Insulator Metal

Band-stop filter based on a metal/insulator-disk array/metal structure

2019 ◽  
Vol 33 (20) ◽  
pp. 1950232
Author(s):  
J. L. Duan ◽  
G. Song ◽  
P. L. Lang ◽  
G. Y. Duan ◽  
F. Z. Xie
Keyword(s):  
Stop Band ◽  
Metal Structure ◽  
Metal Insulator ◽  
Disk Array ◽  
Central Wavelength ◽  
Metal Insulator Metal ◽  
Band Stop Filter ◽  
Potential Applications ◽  
Fdtd Methods ◽  
Mim Waveguide

We describe a band-stop filter based on a periodic dielectric-disk array inserted into a metal–insulator–metal (MIM) waveguide. We use finite-difference time-domain (FDTD) methods to study the characteristics of our proposed structure. The results show that there is a flat stop band in the transmission spectrum, in which the transmission is close to zero. The central wavelength of the filter can be controlled by adjusting the lattice constant of the disk array. We discuss the maximum bandwidth and provide a set of parameters suitable for designing a band-stop filter that has a flat stop band-width of approximately 400 nm and a superior on/off ratio. Our structure has potential applications in the design of nanoscale optical devices.

Design of the Technological Flow to Produce a Planar Variant of the Nothing on Insulator Device and its Tunneling Conduction

2019 ◽  
Vol 60 ◽  
pp. 33-41 ◽  
Author(s):  
Cristian Ravariu ◽  
Elena Manea ◽  
Catalin Parvulescu ◽  
Dan Mihaiescu
Keyword(s):  
Conduction Mechanism ◽  
Metal Structure ◽  
Static Characteristics ◽  
Leakage Currents ◽  
Metal Insulator ◽  
Inversion Channel ◽  
Tunneling Conduction ◽  
Metal Insulator Metal ◽  
Dual Gate ◽  
Effect Transistor

This paper starts from the leakage currents through the gates of the last MOSFET generations and propose a related structure, which can be inherently included as parasitic device in any future MOSFET sub-22nm or can be deliberated fabricated to induce its own behavior. This structure is abbreviated in this paper by p-NOI (planar-Nothing On Insulator) and it can be simply produced by the planar Si-technology. Its concept is derived from the NOI (Nothing On Insulator) concept, but replaces the vacuum with oxide. The conduction mechanism is based on a thin oxide tunneling, under the Fowler-Nordheim's law. The current flow occurs from a source to a lateral drain, without an inversion channel and without a lateral pn junction, as in the MOSFET case. A similar investigated device by other authors is a fabricated MIM (Metal-Insulator-Metal) structure, which is compared with the actual p-NOI simulation. Finally, a dual gate p-NOI device is investigated. The depletion-accumulation transition is captured by the static I-V static characteristics. Using two steps of oxide, of 2nm and 10nm, a second planar-NOI structure with three terminals was studied. The (G) terminal is associated to a Gate and the (S) terminal is associated to a Source of a Field Effect Transistor. Some particular applications as diode or transistor are emphasized versus the gate biasing regime.

Transmission of light through slits array in a metal–insulator–metal structure

2017 ◽  
Vol 383 ◽  
pp. 165-168 ◽  
Author(s):  
Bo Huang ◽  
Zhi Luo ◽  
Xia Wu ◽  
Huidong Yang ◽  
Guannan He
Keyword(s):  
Metal Structure ◽  
Metal Insulator ◽  
Metal Insulator Metal

Test of A Diamond-Tungsten Sampling Calorimeter

1994 ◽  
Vol 339 ◽  
Author(s):  
R. Stone ◽  
M. Franklin ◽  
D. Fujino ◽  
K. K. Gan ◽  
R. Gilman ◽  
...  
Keyword(s):  
Incident Energy ◽  
Ohmic Contacts ◽  
Chemical Vapor ◽  
Metal Structure ◽  
High Rate ◽  
Harsh Environments ◽  
Particle Detector ◽  
High Radiation ◽  
Metal Insulator ◽  
Metal Insulator Metal

ABSTRACTDiamond is suitable for use as an ionizing particle detector for high rate, high radiation, and/or chemically harsh environments. A sampling calorimeter, a detector measuring the total energy of an incident particle, consisting of 20 alternating layers of diamond and tungsten has been constructed and tested. The diamond for the detector layers was grown by chemical vapor deposition with an averaged thickness of 500 μm. The active area of each layer was 3×3 cm2 with ohmic contacts on opposite faces forming a metal-insulator-metal structure. The calorimeter was tested with electrons of energies up to 5.0 GeV. The response of the diamond/tungsten calorimeter was found to be linear as a function of incident energy. A direct comparison of diamond/tungsten and silicon/tungsten calorimeters was made.

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