Determination of deformation potential constant of the conduction band in Si from electron heating experiments on Si metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2786594 ◽

2007 ◽

Vol 91 (13) ◽

pp. 132118 ◽

Author(s):

K. H. Park ◽

T. Unuma ◽

K. Hirakawa ◽

S. Takagi

Keyword(s):

Metal Oxide ◽

Conduction Band ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Deformation Potential ◽

Electron Heating ◽

Potential Constant

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Determination of Flat-Band Voltages for Fully Depleted Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET's)

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.2678 ◽

1992 ◽

Vol 31 (Part 1, No. 9A) ◽

pp. 2678-2681 ◽

Author(s):

Jong-Son Lyu ◽

Kee-Soo Nam ◽

Choochon Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Flat Band ◽

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Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in $\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As}$ Metal–Oxide–Semiconductor Field Effect Transistors

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2013.2289330 ◽

2013 ◽

Vol 13 (4) ◽

pp. 456-462 ◽

Author(s):

Noriyuki Taoka ◽

Masafumi Yokoyama ◽

Sang Hyeon Kim ◽

Rena Suzuki ◽

Sunghoon Lee ◽

...

Keyword(s):

Metal Oxide ◽

Fermi Level ◽

Conduction Band ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Fermi Level Pinning

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Experimental Determination of Shear Stress induced Electron Mobility Enhancements in Si and Biaxially Strained-Si Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.074101 ◽

2010 ◽

Vol 49 (7) ◽

pp. 074101 ◽

Author(s):

Olivier Weber ◽

Mitsuru Takenaka ◽

Shin-ichi Takagi

Keyword(s):

Shear Stress ◽

Metal Oxide ◽

Experimental Determination ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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A new third‐level charge pumping method for accurate determination of interface‐trap parameters in metal‐oxide‐semiconductor field‐effect‐transistors

Review of Scientific Instruments ◽

10.1063/1.1144713 ◽

1994 ◽

Vol 65 (6) ◽

pp. 2141-2142 ◽

Author(s):

Jean‐Luc Autran ◽

Bernard Balland

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Accurate Determination ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

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Measurement of conduction band deformation potential constants using gate direct tunneling current in n-type metal oxide semiconductor field effect transistors under mechanical stress

Applied Physics Letters ◽

10.1063/1.2245373 ◽

2006 ◽

Vol 89 (7) ◽

pp. 073509 ◽

Author(s):

Ji-Song Lim ◽

Xiaodong Yang ◽

Toshikazu Nishida ◽

Scott E. Thompson

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Deformation Potential ◽

Direct Tunneling Current ◽

Band Deformation

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Impact of Deformation Potential Increase at Si/SiO2Interfaces on Stress-Induced Electron Mobility Enhancement in Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cc12 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CC12 ◽

Author(s):

Teruyuki Ohashi ◽

Shunri Oda ◽

Ken Uchida

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Deformation Potential ◽

Potential Increase

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Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4824474 ◽

2013 ◽

Vol 103 (14) ◽

pp. 143509 ◽

Author(s):

Noriyuki Taoka ◽

Masafumi Yokoyama ◽

Sang Hyeon Kim ◽

Rena Suzuki ◽

Sunghoon Lee ◽

...

Keyword(s):

Metal Oxide ◽

Fermi Level ◽

Conduction Band ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fermi Level Pinning

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Determination of the inversion-layer thickness from capacitance measurements of metal-oxide-semiconductor field-effect transistors with ultrathin oxide layers

Physical Review B ◽

10.1103/physrevb.38.1235 ◽

1988 ◽

Vol 38 (2) ◽

pp. 1235-1240 ◽

Author(s):

A. Hartstein ◽

N. F. Albert

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Capacitance Measurements ◽

Ultrathin Oxide

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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