Characterization of low temperature GaAs antenna array terahertz emitters

2007 ◽  
Vol 91 (18) ◽  
pp. 181124 ◽  
Author(s):  
M. Awad ◽  
M. Nagel ◽  
H. Kurz ◽  
J. Herfort ◽  
K. Ploog
Keyword(s):  
Low Temperature ◽  
Antenna Array ◽  
Terahertz Emitters ◽  
Low Temperature Gaas

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Optical characterization of low-temperature GaAs

2000 ◽  
Author(s):  
Genmao Chen ◽  
Harry E. Ruda ◽  
Qiang Liu ◽  
Lech Z. Jedral ◽  
Champika H. Edirisinghe ◽  
...  
Keyword(s):  
Low Temperature ◽  
Optical Characterization ◽  
Low Temperature Gaas

Spectroscopic Ellipsometric Characterization of Low Temperature GaAs

1995 ◽  
Vol 378 ◽  
Author(s):  
X. Gao ◽  
P. G. Snyder ◽  
P. W. Yu ◽  
Y. Q. Zhang ◽  
Z. F. Peng
Keyword(s):  
Low Temperature ◽  
Red Shift ◽  
Strain Effect ◽  
Lorentz Oscillator ◽  
Ellipsometric Characterization ◽  
C 30 ◽  
Low Temperature Gaas ◽  
Low Temperature Grown Gaas ◽  
Lt Gaas

AbstractPseudodielectric functions of low temperature grown GaAs (LT GaAs) measured by spectroscopic ellipsometry are presented. The spectral range includes the El (2.92eV) and El+ΔAl (3.13eV) critical point structure of GaAs. A Lorentz-oscillator model was used to fit the dielectric function of LT GaAs for samples with nominal growth temperatures (Tg) varying from 200°C to 580°C. For Tg of 200°C, 30% and 19% broadenings and −0.01 leV and −0.007eV red shifts were found for the El and El+Δl structures respectively, compared with normal GaAs. The red shift can be explained in terms of a strain effect in the LT layer. In annealed LT GaAs the broadening decreased significantly and no red shift was found.

Characterization of low temperature GaAs grown by molecular beam epitaxy

1996 ◽  
Vol 92 ◽  
pp. 66-69 ◽  
Author(s):  
W.C. Lee ◽  
T.M. Hsu ◽  
J.-I. Chyi ◽  
G.S. Lee ◽  
W.-H. Li ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Low Temperature Gaas

Characterization of low-temperature GaAs by galvanomagnetic an photoluminescence measurements

1997 ◽  
Vol 44 (1-3) ◽  
pp. 341-344 ◽  
Author(s):  
J. Novák ◽  
M. Kučera ◽  
M. Morvic ◽  
J. Betko ◽  
A. Förster ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Temperature Gaas

Growth and characterization of carbon-doped low-temperature GaAs

2002 ◽  
Vol 237-239 ◽  
pp. 1440-1444 ◽  
Author(s):  
J. Herfort ◽  
W. Ulrici ◽  
M. Moreno ◽  
K.H. Ploog
Keyword(s):  
Low Temperature ◽  
Carbon Doped ◽  
Low Temperature Gaas

High‐resolution x‐ray characterization of low‐temperature GaAs/As superlattice grown by molecular‐beam epitaxy

1994 ◽  
Vol 64 (26) ◽  
pp. 3626-3628 ◽  
Author(s):  
T. M. Cheng ◽  
C. Y. Chang ◽  
T. C. Chang ◽  
J. H. Huang ◽  
M. F. Huang
Keyword(s):  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
X Ray ◽  
Low Temperature Gaas
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