(Mg,Zn)O/ZnO Heterostructures Prepared by Pulsed Laser Deposition

2008 ◽  
Vol 388 ◽  
pp. 3-6 ◽  
Author(s):  
Yutaka Adachi ◽  
Naoki Ohashi ◽  
Isao Sakaguchi ◽  
Takeo Osawa ◽  
Haruki Ryoken ◽  
...  
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Band Spectra ◽  
Domain Inversion ◽  
Surface Morphologies ◽  
Zno Single Crystal

(Mg,Zn)O films were grown on Zn- and O-face ZnO single crystal substrates by pulsed laser deposition. The surface morphologies of the films grown on the Zn- and O-face substrates were quite different, indicating that no domain inversion occurred in both films. The films showed markedly different features for valence band spectra obtained by hard X-ray photoemission spectroscopy. This suggests that the effect of film polarity should be considered in X-ray photoemission spectroscopy.

Pulsed Laser Deposition of Epitaxial LiNbO3 Films on Sapphire Substrates Using a Single Crystal Targets

1994 ◽  
Vol 361 ◽  
Author(s):  
See-Hyung Lee ◽  
Tae W. Noh ◽  
Jai-Hyung Lee ◽  
Young-Gi Kim
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pole Figure ◽  
Oxygen Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Sapphire Substrates ◽  
Crystallographic Orientations

ABSTRACTPulsed laser deposition was used to grow epitaxial LiNbO3 films on sapphire(0001) substrates with a single crystal LiNbO3 target. Using deposition temperatures below 450 °C, LiNbO3 films with correct stoichiometry could be grown without using Li-rich targets. Rutherford backscattering spectrometry measurements showed that the oxygen to niobium ratio is 3.00 ± 0.15 to 1.00. It was also found that the crystallographic orientations of the LiNbO3 films could be controlled by adjusting the oxygen pressure during deposition. An x-ray pole figure shows that epitaxial LiNbO3 films were grown on sapphire(0001), but with twin boundaries.

Hard x-ray photoemission spectroscopy in wurtzite-type zinc magnesium oxide solid-solution films grown by pulsed-laser deposition

2008 ◽  
Vol 92 (23) ◽  
pp. 232108 ◽  
Author(s):  
Takeo Ohsawa ◽  
Naoki Ohashi ◽  
Yutaka Adachi ◽  
Isao Sakaguchi ◽  
Haruki Ryoken ◽  
...  
Keyword(s):  
Solid Solution ◽  
Pulsed Laser Deposition ◽  
Magnesium Oxide ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Oxide Solid Solution ◽  
Zinc Magnesium Oxide

scholarly journals Substrate-controlled allotropic phases and growth orientation of TiO2epitaxial thin films

2010 ◽  
Vol 43 (6) ◽  
pp. 1502-1512 ◽  
Author(s):  
V. F. Silva ◽  
V. Bouquet ◽  
S. Députier ◽  
S. Boursicot ◽  
S. Ollivier ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Growth Orientation ◽  
Pole Figures

TiO2thin films were grown by pulsed laser deposition on a wide variety of oxide single-crystal substrates and characterized in detail by four-circle X-ray diffraction. Films grown at 873 K on (100)-oriented SrTiO3and LaAlO3were (001)-oriented anatase, while on (100) MgO they were (100)-oriented. On (110) SrTiO3and MgO, (102) anatase was observed. OnM-plane andR-plane sapphire, (001)- and (101)-oriented rutile films were obtained, respectively. OnC-plane sapphire, the coexistence of (001) anatase, (112) anatase and (100) rutile was found; increasing the deposition temperature tended to increase the rutile proportion. Similarly, films grown at 973 K on (100) and (110) MgO showed the emergence, besides anatase, of (110) rutile. All these films were epitaxically grown, as shown by φ scans and/or pole figures, and the various observed orientations were explained on the basis of misfit considerations and interface arrangement.

Microanalysis of silicate glass films grown on α-Al2O3 by pulsed-laser deposition

1993 ◽  
Vol 51 ◽  
pp. 438-439
Author(s):  
Michael P. Mallamaci ◽  
James Bentley ◽  
C. Barry Carter
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ceramic Materials ◽  
Laser Deposition ◽  
Triple Junctions ◽  
Ion Milling ◽  
Multicomponent Oxides ◽  
Glass Films

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.

X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES ON THE BONDING PROPERTIES OF AMORPHOUS CARBON NITRIDE FILMS SYNTHESIZED BY PULSED LASER DEPOSITION WITH DIFFERENT SUBSTRATE TEMPERATURES

2005 ◽  
Vol 12 (02) ◽  
pp. 185-195
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Measurement Techniques ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Amorphous Carbon Nitride ◽  
Substrate Temperatures

Amorphous carbon nitride films ( a-CN x) were deposited by pulsed laser deposition of camphoric carbon target with different substrate temperatures (ST). The influence of ST on the synthesis of a-CN x films was investigated. The nitrogen-to-carbon (N/C) and oxygen-to-carbon (O/C) atomic ratios, bonding state, and microstructure of the deposited a-CN x films were characterized by X-ray photoelectron spectroscopy and were confirmed by other standard measurement techniques. The bonding states between C and N , and C and O in the deposited films were found to be significantly influenced by ST during the deposition process. The N/C and O/C atomic ratios of the a-CN x films reached the maximum value at 400°C. ST of 400°C was proposed to promote the desired sp 3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N , C=N and C≡N were observed in the films.

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