Effect of gate bias sweep rate on the electronic properties of ZnO nanowire field-effect transistors under different environments

2008 ◽  
Vol 92 (23) ◽  
pp. 233120 ◽  
Author(s):  
Jongsun Maeng ◽  
Gunho Jo ◽  
Soon-Shin Kwon ◽  
Sunghoon Song ◽  
Jaeduck Seo ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Sweep Rate ◽  
Gate Bias ◽  
Zno Nanowire

Tuning the electronic properties of ZnO nanowire field effect transistors via surface functionalization

2015 ◽  
Vol 26 (9) ◽  
pp. 095202 ◽  
Author(s):  
Cheng Han ◽  
Du Xiang ◽  
Minrui Zheng ◽  
Jiadan Lin ◽  
Jianqiang Zhong ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Surface Functionalization ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Zno Nanowire

Investigation of threshold voltage instability induced by gate bias stress in ZnO nanowire field effect transistors

2012 ◽  
Vol 23 (48) ◽  
pp. 485201 ◽  
Author(s):  
Minhyeok Choe ◽  
Woojin Park ◽  
Jang-Won Kang ◽  
Sehee Jeong ◽  
Woong-Ki Hong ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Bias ◽  
Zno Nanowire ◽  
Bias Stress ◽  
Voltage Instability ◽  
Gate Bias Stress

scholarly journals Electrical and optical properties of single As-doped ZnO nanowire field effect transistors

2009 ◽  
Vol 58 (6) ◽  
pp. 4156
Author(s):  
Zhang Jun-Yan ◽  
Deng Tian-Song ◽  
Shen Xin ◽  
Zhu Kong-Tao ◽  
Zhang Qi-Feng ◽  
...  
Keyword(s):  
Optical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Zno Nanowire ◽  
Electrical And Optical Properties ◽  
Doped Zno

scholarly journals High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment

2007 ◽  
Vol 18 (15) ◽  
pp. 155201 ◽  
Author(s):  
Sanghyun Ju ◽  
Kangho Lee ◽  
Myung-Han Yoon ◽  
Antonio Facchetti ◽  
Tobin J Marks ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Ozone Treatment ◽  
Metal Contacts ◽  
Zno Nanowire

Turn-on and Charge Build-up Dynamics in Polymer Field Effect Transistors

2005 ◽  
Vol 871 ◽  
Author(s):  
Yohai Roichman ◽  
Nir Tessler
Keyword(s):  
Power Law ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Time Range ◽  
Gate Bias ◽  
Current Dependence ◽  
Turn On ◽  
Long Time ◽  
Source Current ◽  
Short Time

AbstractTurn-on dynamics of polymer field effect transistors were examined experimentally over a wide timescale. We found that the source current dependence on time following switch on of the gate bias exhibits a power law at the short time range, and an exponential decay at the intermediate to long time range. We demonstrate that the transistor dynamic behavior is governed by the channel charge build-up, and can be described accurately by a simple capacitor-resistor distributed line model.

A fabrication technique for top-gate ZnO nanowire field-effect transistors by a photolithography process

2007 ◽  
Vol 84 (5-8) ◽  
pp. 1622-1626 ◽  
Author(s):  
Kihyun Keem ◽  
Jeongmin Kang ◽  
Changjoon Yoon ◽  
Donghyuk Yeom ◽  
Dong-Young Jeong ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Fabrication Technique ◽  
Zno Nanowire ◽  
Photolithography Process

Fabrication and Device Characterization of Omega-Shaped-Gate ZnO Nanowire Field-Effect Transistors

Nano Letters ◽  
2006 ◽  
Vol 6 (7) ◽  
pp. 1454-1458 ◽  
Author(s):  
Kihyun Keem ◽  
Dong-Young Jeong ◽  
Sangsig Kim ◽  
Moon-Sook Lee ◽  
In-Seok Yeo ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Zno Nanowire ◽  
Device Characterization

Themed issue on “Organic field-effect transistors: interfacial phenomena and electronic properties”

2015 ◽  
Vol 17 (40) ◽  
pp. 26509-26511 ◽  
Author(s):  
K. Krishnamoorthy ◽  
Antonio F. Facchetti ◽  
Wenping Hu ◽  
Zhenan Bao
Keyword(s):  
Electronic Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Interfacial Phenomena ◽  
Organic Field Effect Transistors

This themed issue presents a collection of articles on organic field-effect transistors: interfacial phenomena and electronic properties.

Tuning of the Electronic Characteristics of ZnO Nanowire Field Effect Transistors by Proton Irradiation

ACS Nano ◽  
2010 ◽  
Vol 4 (2) ◽  
pp. 811-818 ◽  
Author(s):  
Woong-Ki Hong ◽  
Gunho Jo ◽  
Jung Inn Sohn ◽  
Woojin Park ◽  
Minhyeok Choe ◽  
...  
Keyword(s):  
Field Effect ◽  
Proton Irradiation ◽  
Field Effect Transistors ◽  
Zno Nanowire
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