Fabrication and Device Characterization of Omega-Shaped-Gate ZnO Nanowire Field-Effect Transistors

The electrical properties of single ZnO nanowire were researched in the chamber of a scanning electron microscope under high-vacuum conditions using nanomanipulator and measurement system. The result shows that ZnO nanowire resistivity was about 1.4 Ω•cm with Ohmic contact. The local change of electron density induced by Shottky contacts or Ohmic contact with tip and semiconductor/metal materials significantly affects the current transport through the nanowire. Single ZnO nanowire was configured as field effect transistors (FET) and based on metal tantalum (Ta) as electrodes show a pronounced n-type gate modulation with an electron concentration of ~1.0×1019 cm−3 and an electron mobility of ~52 cm2 /V s at a bias voltage of 1 V.

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Fabrication and Characterization of Directly-Assembled ZnO Nanowire Field Effect Transistors with Polymer Gate Dielectrics

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2007.18085 ◽

2007 ◽

Vol 7 (11) ◽

pp. 4101-4105

Author(s):

Ahnsook Yoon ◽

Woong-Ki Hong ◽

Takhee Lee

Keyword(s):

Dielectric Layer ◽

Field Effect ◽

Gate Dielectric ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Electrical Characterization ◽

Electrical Characteristics ◽

Zno Nanowire ◽

Device Structure

We report the fabrication and electrical characterization of ZnO nanowire field effect transistors (FETs). Dielectrophoresis technique was used to directly align ZnO nanowires between lithographically prepatterned source and drain electrodes, and spin-coated polyvinylphenol (PVP) polymer thin layer was used as a gate dielectric layer in "top-gate" FET device configuration. The electrical characteristics of the top-gate ZnO nanowire FETs were found to be comparable to the conventional "bottom-gate" nanowire FETs with a SiO2 gate dielectric layer, suggesting the directly-assembled nanowire FET with a polymer gate dielectric layer is a useful device structure of nanowire FETs.

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Characterization of ZnO nanowire field-effect transistors exposed to high energy proton radiation

2006 IEEE Nanotechnology Materials and Devices Conference ◽

10.1109/nmdc.2006.4388820 ◽

2006 ◽

Author(s):

Woong-Ki Hong ◽

Ahnsook Yoon ◽

Sunghoon Song ◽

Kwanwoo Shin ◽

Takhee Lee

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

High Energy ◽

Proton Radiation ◽

Zno Nanowire ◽

High Energy Proton ◽

Energy Proton

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Characterization of ZnO Nanowire Field Effect Transistors by Fast Hydrogen Peroxide Solution Treatment

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.035001 ◽

2012 ◽

Vol 51 ◽

pp. 035001 ◽

Cited By ~ 1

Author(s):

Taehyeon Kwon ◽

Woojin Park ◽

Minhyeok Choe ◽

Jongwon Yoon ◽

Sangsu Park ◽

...

Keyword(s):

Hydrogen Peroxide ◽

Field Effect ◽

Field Effect Transistors ◽

Solution Treatment ◽

Hydrogen Peroxide Solution ◽

Zno Nanowire

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Fabrication and Characterization of Directly-Assembled ZnO Nanowire Field Effect Transistors with Polymer Gate Dielectrics

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2007.011 ◽

2007 ◽

Vol 7 (11) ◽

pp. 4101-4105 ◽

Cited By ~ 11

Author(s):

Ahnsook Yoon ◽

Woong-Ki Hong ◽

Takhee Lee

Keyword(s):

Dielectric Layer ◽

Field Effect ◽

Gate Dielectric ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Electrical Characterization ◽

Electrical Characteristics ◽

Zno Nanowire ◽

Device Structure

We report the fabrication and electrical characterization of ZnO nanowire field effect transistors (FETs). Dielectrophoresis technique was used to directly align ZnO nanowires between lithographically prepatterned source and drain electrodes, and spin-coated polyvinylphenol (PVP) polymer thin layer was used as a gate dielectric layer in "top-gate" FET device configuration. The electrical characteristics of the top-gate ZnO nanowire FETs were found to be comparable to the conventional "bottom-gate" nanowire FETs with a SiO2 gate dielectric layer, suggesting the directly-assembled nanowire FET with a polymer gate dielectric layer is a useful device structure of nanowire FETs.

Download Full-text