Turn-on and Charge Build-up Dynamics in Polymer Field Effect Transistors

2005 ◽  
Vol 871 ◽  
Author(s):  
Yohai Roichman ◽  
Nir Tessler

AbstractTurn-on dynamics of polymer field effect transistors were examined experimentally over a wide timescale. We found that the source current dependence on time following switch on of the gate bias exhibits a power law at the short time range, and an exponential decay at the intermediate to long time range. We demonstrate that the transistor dynamic behavior is governed by the channel charge build-up, and can be described accurately by a simple capacitor-resistor distributed line model.

2004 ◽  
Vol 13 (03n04) ◽  
pp. 633-636 ◽  
Author(s):  
H. S. KANG ◽  
H.-S. KANG ◽  
J. K. LEE ◽  
J. JOO ◽  
M. S. LEE ◽  
...  

We fabricated all-polymer based flexible field effect transistors (FETs) using poly (3,4-ethylenedioxythiophene) (PEDOT) or polypyrrole (PPy) as the active layer and gate electrode. Polyvinyle cinnamate (PVCN) and epoxy were used for a dielectric layer. The PEDOT and PPy as the active layer and electrode were patterned through simple photo-lithography, and PVCN and epoxy as insulating layers were coated by using a spin-coater. We estimated the threshold voltage and trans-conductance through measuring the drain-source current (I ds ) as a function of gate bias (V g ). We suggest that ionic motion in the active layer plays an important role for electrical properties.


2018 ◽  
Vol 140 ◽  
pp. 109-114 ◽  
Author(s):  
Jungkyu Jang ◽  
Sungju Choi ◽  
Jungmok Kim ◽  
Tae Jung Park ◽  
Byung-Gook Park ◽  
...  

2014 ◽  
Vol 25 (15) ◽  
pp. 155201 ◽  
Author(s):  
Kyungjune Cho ◽  
Tae-Young Kim ◽  
Woanseo Park ◽  
Juhun Park ◽  
Dongku Kim ◽  
...  

2008 ◽  
Vol 92 (23) ◽  
pp. 233120 ◽  
Author(s):  
Jongsun Maeng ◽  
Gunho Jo ◽  
Soon-Shin Kwon ◽  
Sunghoon Song ◽  
Jaeduck Seo ◽  
...  

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